Abstract: The present disclosure relates to a method for treating a cancer and/or cancer metastasis in a subject comprising administering to the subject irinotecan loaded in a mesoporous silica nanoparticle. The present disclosure also provides a conjugate comprising an agent loaded in a mesoporous silica nanoparticle (MSN) defining at least one pore and having at least one functional group on a sidewall of the at least one pore.

Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: A plasma-assisted annealing system includes a high temperature furnace, a plasma-induced dissociator and a connecting duct. The plasma-induced dissociator is provided to dissociate a working gas and exhaust the dissociated working gas from its working gas outlet. Both ends of the connecting duct are connected to the working gas outlet of the plasma-induced dissociator and a gas inlet of the high temperature furnace, respectively. The working gas dissociated in the plasma-induced dissociator is introduced into the high temperature furnace via the connecting duct.

Abstract: A sequencer component residing in a first package receives data from a controller residing in a second package that is different than the first package including the sequencer component. The sequencer component performs an error correction operation on the data received from the controller. The error correction operation encodes the data with additional data to generate a code word. The sequencer component stores the code word at a memory device.

Abstract: An instruction can be received at a sequencer from a controller. The sequencer can be in a package including the sequencer and one or more memory components. The sequencer is operatively coupled to a controller that is separate from the package. A processing device of the sequencer can perform an operation based on the instruction on at least one of the one or more memory components in the package.

Abstract: A host operation to be performed can be received. Sub-operations that are associated with the received host operation can be determined. A memory component of multiple memory components can be identified for each sub-operation. Furthermore, each sub-operation can be transmitted to a media sequencer component that is associated with a respective memory component of the memory components.

Abstract: A processing device can determine a configuration parameter based on a memory type of a memory component that is managed by a memory system controller. The processing device can receive data from a host system. The processing device can generate, by performing a memory operation using the configuration parameter, an instruction based on the data. The processing device can identify a sequencer of a plurality of sequencers that are collocated, within a single package external to the memory system controller, wherein each sequencer of the plurality of sequencers interfaces with a respective memory component. The processing device can send the instruction to the sequencer.

Abstract: A read operation to retrieve data stored at a memory device is performed. Whether the data retrieved from the memory device includes an error that is not correctable is determined. Responsive to determining that the data retrieved from the memory device comprises the error that is not correctable, a buffer in a data path along which a write operation was performed to write the data at the memory device is searched for the data.

Abstract: An instruction can be received at a sequencer from a controller. The sequencer can be in a package including the sequencer and one or more memory components. The sequencer is operatively coupled to a controller that is separate from the package. A processing device of the sequencer can perform an operation based on the instruction on at least one of the one or more memory components in the package.

Abstract: A processing device can determine a configuration parameter based on a memory type of a memory component that is managed by a memory system controller. The processing device can receive data from a host system. The processing device can generate, by performing a memory operation using the configuration parameter, an instruction based on the data. The processing device can identify a sequencer of a plurality of sequencers that are collocated, within a single package external to the memory system controller, wherein each sequencer of the plurality of sequencers interfaces with a respective memory component. The processing device can send the instruction to the sequencer.

Abstract: An instruction can be received at a sequencer from a controller. The sequencer can be in a package including the sequencer and one or more memory components. The sequencer is operatively coupled to a controller that is separate from the package. A processing device of the sequencer can perform an operation based on the instruction on at least one of the one or more memory components in the package.

Abstract: A sequencer component residing in a first package receives data from a controller residing in a second package that is different than the first package including the sequencer component. The sequencer component performs an error correction operation on the data received from the controller. The error correction operation encodes the data with additional data to generate a code word. The sequencer component stores the code word at a memory device.

Abstract: A processing device can determine a configuration parameter to be used in an error correction code (ECC) operation. The configuration parameter is based on a memory type of a memory component that is associated with a controller. Data can be received from a host system. The processing device can generate a code word for the data by using the ECC operation that is based on the configuration parameter. The code word can be sent to a sequencer that is external to the controller.

Abstract: A host operation to be performed can be received. Sub-operations that are associated with the received host operation can be determined. A memory component of multiple memory components can be identified for each sub-operation. Furthermore, each sub-operation can be transmitted to a media sequencer component that is associated with a respective memory component of the memory components.

Abstract: A processing device of a sequencer component can receive data from a controller that is external to the sequencer component. The processing device of the sequencer component can perform an error correction operation on the data received from the controller that is external to the sequencer component to generate a code word associated with the data. The code word can be stored at a memory component coupled with the sequencer component.

Abstract: A host operation to be performed can be received. Sub-operations that are associated with the received host operation can be determined. A memory component of multiple memory components can be identified for each sub-operation. Furthermore, each sub-operation can be transmitted to a media sequencer component that is associated with a respective memory component of the memory components.

Abstract: A read operation to retrieve data stored at a memory device is performed. Whether the data retrieved from the memory device includes an error that is not correctable is determined. Responsive to determining that the data retrieved from the memory device comprises the error that is not correctable, a buffer in a data path along which a write operation was performed to write the data at the memory device is searched for the data.