Abstract: Disclosed is a light-emitting diode chip. A first electrode and a second electrode of the light-emitting diode chip face towards a front side. A back side of a first conduction layer is directly connected to a front side of a base. A portion of the first conduction layer is at least exposed from the front side to be used for the arrangement of the first electrode. A portion of a second conduction layer is at least exposed from the front side to be used for the arrangement of the second electrode. The exposed first conduction layer and the exposed second conduction layer are of equal height. An insulating layer extending from a recess covers a back side of the second conductive layer.

Abstract: A LED packaging module includes a plurality of LED chips, a wiring layer, and an encapsulant component. The LED chips are spaced apart, each of which includes chip first, chip second, and chip side surfaces, and an electrode unit. The wiring layer is disposed on the chip second surfaces, has first, second, and side wiring layer surfaces, and is divided into a plurality of wiring parts spaced apart. The first wiring layer surface contacts and is electrically connected to the electrode units. The encapsulant component includes first and second encapsulating layers, covers the chip side surfaces, the chip first surfaces, and the side wiring layer surface, and fills gaps among the wiring parts. Each LED chip has a thickness represented by TA, the first encapsulating layer has a thickness represented by TB, and TA and TB satisfy a relationship: TB/TA?1.

Abstract: A display apparatus includes a thin-film transistor (TFT) substrate and a light-emitting module arranged on the TFT substrate. The light-emitting module includes multiple light-emitting elements, the light-emitting elements include a first light-emitting element emitting a first wavelength, a second light-emitting element emitting a second wavelength, and a third light-emitting element emitting a third wavelength. A voltage of each light-emitting element is greater than or equal to 3 volts (V) when a rated current is 1 microampere (?A).

Abstract: A method for transferring a micro semiconductor element includes the following steps. A substrate, a bonding layer disposed on the substrate, and a supporting member disposed on the bonding layer opposite to the substrate are provided. The supporting member is bonded to a micro semiconductor element for supporting the same. A through hole is provided to extend through the substrate, the bonding layer, and the supporting member so as to forma transfer structure. A separation force is applied via the through hole to separate the micro semiconductor element from the supporting member.

Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.

Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

Abstract: A light-emitting diode (LED) packaging module includes LED chips, a wiring layer, and an encapsulant component. Each of the LED chips includes a chip first surface, a chip second surface, a chip side surface, and an electrode unit. The wiring layer is disposed on the chip second surfaces of the LED chips, and contacts and is electrically connected to the electrode units. The encapsulant component includes a first encapsulating layer that covers the chip side surface, and a second encapsulating layer that covers the wiring layer. The LED chip has a thickness TA, the first encapsulating layer has a thickness TB, in which TB/TA?1.

Abstract: A light-emitting device includes a lead frame, a light-emitting diode (LED) chip, and an encapsulant. The LED chip is disposed on the lead frame, and includes a substrate, a semiconductor light-emitting unit disposed on a surface of the substrate, and a first electrode and a second electrode, which are disposed on the surface of the substrate, and which are located outwardly of the semiconductor light-emitting unit. The first and second electrodes are electrically connected to a lower surface of the semiconductor light-emitting unit, and are respectively connected to a first wiring bonding region and a second wiring bonding region on the lead frame. The encapsulant encapsulates the LED chip.

Abstract: A packaged ultraviolet light-emitting device includes a support member, at least one ultraviolet light-emitting chip, and an encapsulating cover. The support member has opposite top and bottom surfaces, a side surface interconnecting the top and bottom surfaces, and at least one indentation. The ultraviolet light-emitting chip is disposed on the top surface of the support member. The encapsulating cover is made from a fluorine-containing resin, and is disposed over and in contact with the ultraviolet light-emitting chip and the top surface and the indentation of the support member. The encapsulating cover extends into the indentation. A production method of the packaged ultraviolet light-emitting device is also disclosed.

Abstract: Embodiments of the present application disclose a chip-on-film structure, a display device, and a spliced display device. The chip-on-film structure includes: a substrate having a first surface and a second surface oppositely disposed; a first circuit covering the first surface, wherein the first circuit includes a driving chip bonding area; a display panel bonding end disposed on the second surface; and a first conductive portion connected to the first circuit and the display panel bonding end respectively.

Abstract: A micro light-emitting device includes a support structure with a cavity and at least one micro light-emitting element that includes a semiconductor structure accommodated by the cavity, at least one bridge connection member disposed on the semiconductor structure to interconnect the semiconductor structure and the support structure, and a protruding contact member disposed on at least one of the semiconductor structure and the bridge connection member and protruding therefrom to be configured to contact with a transfer means. The device is configured to contact with the transfer means at the protruding contact member of the element. A transfer method using the device is also disclosed.

Abstract: An LED device includes a substrate, a conductive layer, an LED chip, and a discharge element. The substrate has upper and lower surfaces and four edges interconnected to one another and surrounding the upper surface. The conductive layer is formed on the upper surface, and has first and second regions electrically separated by a trench. The trench has a first segment inclined relative to each edge of the substrate by a predetermined angle ranging between 0 and 90 degrees, and a second segment connected to the first segment. The LED chip is disposed across the first segment, and the discharge element is disposed across the second segment, both interconnecting the first and second regions.

Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.

Abstract: The present application provides a display panel and a manufacturing method thereof. The display panel includes: a driving substrate, a plurality of chips, a dielectric layer, and a plurality of encapsulating colloids. Each of the plurality of chips and each of the plurality of encapsulating colloids are correspondingly arranged, and the encapsulating colloid covers the chip. The dielectric layer is disposed on outer peripheries of the encapsulating colloids. The encapsulating colloid includes a substrate and a curved lens connected to each other, the substrate covers the chip, and the curved lens is disposed on a side of the substrate away from the chip.

Abstract: A light-emitting device includes a lead frame, a light-emitting diode (LED) chip, and an encapsulant. The LED chip is disposed on the lead frame, and includes a substrate, a semiconductor light-emitting unit disposed on a surface of the substrate, and a first electrode and a second electrode, which are disposed on the surface of the substrate, and which are located outwardly of the semiconductor light-emitting unit. The first and second electrodes are electrically connected to a lower surface of the semiconductor light-emitting unit, and are respectively connected to a first wiring bonding region and a second wiring bonding region on the lead frame. The encapsulant encapsulates the LED chip on the lead frame.

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.

Abstract: A display device and a display are provided. The display device includes: a drive substrate including a drive circuit, a light-emitting device array, a micro-optical structure, and a color conversion layer array. The light-emitting device array is disposed on a surface of the drive substrate and includes multiple light-emitting devices electrically connected to the drive circuit, and light emitted by the multiple light-emitting devices is light with a same color. The micro-optical structure is disposed above the light-emitting device array and used to refract the light emitted by the light-emitting device array to a uniform refraction angle. The color conversion layer array is disposed above the micro-optical structure, the multiple light-emitting devices respectively correspond to multiple color conversion layers in the color conversion layer array, and the color conversion layer array is used to convert the light emitted by the multiple light-emitting devices into light with a required color.

Abstract: A micro-LED chip includes an epitaxial structure, which includes first and second doped type semiconductor layers and an active layer disposed between the first and second doped type semiconductor layers; a light-emitting side of the first doped type semiconductor layer facing away from the active layer is provided with a patterned structure; and an elongated edge a of the micro-LED chip, a thickness b of the micro-LED chip, and a peak-valley height difference c of the patterned structure satisfy: 0.01?b/a?6, and 0.01?c/b?0.3. By designing a structure size and/or a shape of the micro-LED chip combined with designing the peak-valley height difference of the patterned structure to satisfy the condition of 0.01?c/b?0.3, power of laser lift-off operation can be reduced and a process window thereof is enlarged, and light extraction efficiency of the micro-LED chip is achieved. And a display device using the micro-LED chip is provided.

Abstract: A LED pixel unit, a display panel and a display screen are provided. The LED pixel unit includes: multiple micro-LEDs with different emission wavelengths and an optical module, the micro-LEDs are stacked to form a stacked structure, the stacked structure has a light-emitting surface, and the stacked structure is configured to emit, from the light-emitting surface, light emitted by the micro-LEDs at a first emission angle; the optical module is disposed above the light-emitting surface and at a predetermined distance from the light-emitting surface, and the optical module is configured to emit, at a second emission angle, the light emitted by the light-emitting surface. The light emitted by the micro-LEDs in the same pixel unit is all emitted from the same light-emitting surface, incident on the optical module at the same angle, and emitted from the optical module at the same angle, so that a dispersion phenomenon can be avoided.

Abstract: A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.