Abstract: A die bonding process for manufacturing a semiconductor device includes the steps of: a) preparing a semiconductor structure and a substrate, b) mounting an electrode structure on the semiconductor structure to form a semiconductor component, c) forming a protective component at a die bonding region, and d) mounting the semiconductor component on the substrate via a die bonding technique. The protective component is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant around the semiconductor device than an adsorption capability for the suspended pollutant of a material for the electrode structure.

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(W)/S(?max), ?0.

Abstract: A light-emitting diode includes from bottom to up: a substrate, a first-conductive type semiconductor layer, a super lattice, a multi-quantum well layer and a second-conductive type semiconductor layer. At least one layer of granular medium layer is inserted in the super lattice. The granular medium layer is used for forming V pits with different widths and depths in the super lattice. The multi-quantum well layer fills up the V pits and is over the top surface of the super lattice. The number of micro-particle generations, positions and densities can be adjusted by introducing granular medium layers and controlling the number of layers, position and growth conditions during super lattice growth process, to ensure V pits of different depths and densities. This can change hole injection effect, effectively improve hole injection efficiency and distribution uniformity in all quantum wells, thus improving LED light-emitting efficiency.

Abstract: A light-emitting diode (LED) package structure includes: a support; an LED chip; and a package cover, wherein: a support circuit is formed over the support; the LED chip is arranged over the support and electrically coupled to the support circuit; a lower surface periphery of the package cover is provided with a groove structure filled with organic binder; and the package cover is arranged over the LED chip and connected to the support via the organic binder.

Abstract: A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.

Abstract: A device configured to transfer a micro element includes: a pick-up head array configured to selectively pick up or release the micro element, and including a plurality of pick-up heads; and a test circuit having a plurality of sub-test circuits, each sub-test circuit corresponding to one pick-up head among the plurality of pick-up heads, and having at least two test electrodes for simultaneous testing of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Abstract: A light-emitting diode (LED) package includes a substrate with upper and lower surfaces, including: a metal block; an electrically insulating region surrounding at least a portion of the metal block; an LED chip mounted on the substrate and in electrical communication with the metal block; and an encapsulant covering at least an upper surface of the LED chip. A light-emitting system includes a plurality of light-emitting diode (LED) chips; and a package support for the plurality of LED chips.

Abstract: A device configured to transfer a micro element includes: a pick-up head array configured to selectively pick up or release the micro element, and including a plurality of pick-up heads; and a test circuit having a plurality of sub-test circuits, each sub-test circuit corresponding to one pick-up head among the plurality of pick-up heads, and having at least two test electrodes for simultaneous testing of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.

Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.

Abstract: A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.

Abstract: A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlxIn1-x-yGayN layer (0?x?1, 0?y?1) over the sputtered AlN buffer layer.

Abstract: A fabrication method of a nitride underlayer structure includes, during AlN layer sputtering with PVD, a small amount of non-Al material is doped to form nitride with decomposition temperature lower than that of AlN. A high-temperature annealing is then performed. After annealing, the AlN layer has a rough surface with microscopic ups and downs instead of a flat surface. By continuing AlGaN growth via MOCVD over this surface, the stress can be released via 3D-2D mode conversion, thus improving AlN cracks.

Abstract: A transfer device for micro element with a test circuit can test the micro element during transfer. The transfer device for micro elements includes: a base substrate, having two surfaces opposite to each other; a pick-up head array, formed over the first surface of the base substrate for picking up or releasing the micro element; a test circuit set inside or/on the surface of the base substrate, which has a series of sub-test circuits, each sub-test circuit at least having two test electrodes for simultaneous test of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Abstract: A light-emitting device includes a base having an insulating part and a metal block; a light-emitting diode (LED) chip over the base; a water soluble paste between the LED chip and the base metal block for chip fixing and heat conduction; packaging glue covering the LED chip; and the LED chip bottom, water soluble paste and the base metal block form an all-metal thermal conducting path to achieve low a thermal resistance.

Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width ?0.4 ?m, such as ?0.3 ?m), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.

Abstract: A light-emitting diode (LED) structure includes a substrate; a first semiconductor layer on the substrate; a light emitting layer on the first semiconductor layer; a second semiconductor layer on the light emitting layer; and an electrode on the semiconductor layer composed of a body and an extension body, wherein, the electrode extension portion is in a certain angle with the contacting semiconductor layer and separates the electrode body from the light emitted to its top surface and sides with a semi-wrapping structure.

Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

Abstract: A light-emitting diode (LED) chip includes from bottom to up: a conductive substrate, a p-type nitride layer, an active layer, an n-type recovery layer, an n-type nitride layer and an n electrode, wherein, the n-type nitride layer has a nitride polarity crystal and a gallium polarity crystal, and the surfaces of the nitride polarity and the gallium polarity regions appear different in height, the n-type recovery layer surface approximate to the n-type nitride layer has consistent mixed polarity with the n-type nitride layer, and the surface far from the n-type nitride layer is a connected gallium polarity surface.

Abstract: A light-emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions; and a light transmission layer having a plurality of light transmission portions between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission portions have a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serve as current blocking layer. A current spreading layer covers the light transmission layer and the epitaxial layer not masked by the light transmission layer. A refractive index of the light transmission layer is between those of the epitaxial layer and the holes, indicating a difference of refractive index between the light transmission layer and the epitaxial layer. Light scattering probability can therefore be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.