Abstract: A transfer head for transferring micro elements includes a cavity with a plurality of vacuum paths; a suite having a plurality of suction nozzles and vacuum path components. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles absorb or release the micro elements through vacuum pressure, which is transmitted by vacuum path components and vacuum paths of each path. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can absorb or release required micro element through vacuum pressure.

Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: A micro light-emitting device includes a support structure with a cavity and at least one micro light-emitting element that includes a semiconductor structure accommodated by the cavity, at least one bridge connection member disposed on the semiconductor structure to interconnect the semiconductor structure and the support structure, and a protruding contact member disposed on at least one of the semiconductor structure and the bridge connection member and protruding therefrom to be configured to contact with a transfer means. The device is configured to contact with the transfer means at the protruding contact member of the element. A transfer method using the device is also disclosed.

Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.

Abstract: A light emitting device includes a light emitting structure, first and second electrodes, and a shielding layer. The light emitting structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer that are stacked along a stacking direction in such order. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer. The shielding layer is connected to aside of the light emitting structure and is adapted to absorb or reflect incident laser light.

Abstract: A light-emitting diode (LED) includes: a base having an upward-opening accommodating space; an LED chip disposed at the base, and arranged in the accommodating space; a packaging adhesive covering the LED chip; a lens disposed over the packaging adhesive, wherein: the lens has a first surface proximal to the packaging adhesive; the first surface has: a first subsurface at a center area with a substantially spherical or parabolic shape; a second subsurface with a substantially ring shape and surrounding the first subsurface and extending downward with an increasing diameter; a third subsurface with a substantially ring shape and surrounding the second subsurface, having a top ring edge and extending downward with a decreasing diameter; and a fourth subsurface with a substantially planar shape and surrounding the top ring edge of the third subsurface and connected with the base.

Abstract: A micro device transferring apparatus includes a first conveying mechanism, a carrier unit, a push device and a release device. The first conveying mechanism includes a release tape having a release adhesive, a first roller connected to an end of the release tape, and a conveying device connected to a horizontal section of the release tape to drive the release tape to move in a moving direction. The carrier unit includes a first carrier holding multiple micro devices, and a second carrier for receiving the micro devices. The push device is for pushing the release tape to pick up the micro devices with the release adhesive. The release device is for decomposing the release adhesive to release the micro devices.

Abstract: Disclosed is a micro light-emitting component, a micro light-emitting diode, and a transfer layer. The transfer layer has a recess for receiving the micro light-emitting diode to permit the micro light-emitting diode to be retained by the transfer layer, and is transformable from a first state, in which the transfer layer is deformed by the micro light-emitting diode to form the recess, to a second state, in which the micro light-emitting diode received in the recess is retained by the transfer layer. Also disclosed are micro light-emitting component matrix and a method for manufacturing the micro light-emitting component matrix.

Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.

Abstract: Disclosed is a light-emitting diode including an epitaxial laminate, a first electrode, and a second electrode. The epitaxial laminate includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer. The first type semiconductor layer has an outer surface, and a recess extending inwardly from the outer surface. Also disclosed is a method for transferring the light-emitting diode.

Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.

Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Abstract: A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.

Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.

Abstract: A method for transferring a micro semiconductor element includes the following steps. A substrate, a bonding layer disposed on the substrate, and a supporting member disposed on the bonding layer opposite to the substrate are provided. The supporting member is bonded to a micro semiconductor element for supporting the same. A through hole is provided to extend through the substrate, the bonding layer, and the supporting member so as to forma transfer structure. A separation force is applied via the through hole to separate the micro semiconductor element from the supporting member.

Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

Abstract: An electrically conductive layered structure includes a lower transparent conductive layer having a bottom surface, an upper transparent conductive layer formed on the lower transparent conductive layer opposite to the bottom surface, and at least one hole extending from the top surface to the bottom surface. The at least one hole has a first diameter at a first side adjacent to the top surface and a second diameter at a second side opposite to the first side. The first diameter is smaller than the second diameter. A light-emitting diode device including the electrically conductive layered structure and a method for manufacturing the electrically conductive layered structure are also disclosed.

Abstract: A micro-LED chip includes an epitaxial layered structure, and first and second electrodes. The epitaxial layered structure includes first-type and second-type semiconductor layers, and a light emitting layer sandwiched therebetween. The first and second electrodes are electrically connected to the first-type and second-type semiconductor layers, respectively. The micro-LED chip has a first distinctive region on an electrode surface of the first electrode. The first distinctive region has a surface morphology different from that of an adjacent region of the electrode surface of the first electrode. A method for manufacturing a micro-LED device including at least one micro-LED chip is also provided.

Abstract: A die bonding process for manufacturing a semiconductor device includes the steps of: a) preparing a semiconductor structure and a substrate, b) mounting an electrode structure on the semiconductor structure to form a semiconductor component, c) forming a protective component at a die bonding region, and d) mounting the semiconductor component on the substrate via a die bonding technique. The protective component is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant around the semiconductor device than an adsorption capability for the suspended pollutant of a material for the electrode structure.