Abstract: Provided is a semiconductor device including: a substrate, a plurality of isolation structures, a plurality of channel layers, and a gate structure. The substrate includes a plurality of fins thereon. The plurality of isolation structures are respectively disposed between the plurality of fins. A top surface of the plurality of isolation structures is higher than a top surface of the plurality of fins to form a plurality of openings. The plurality of channel layers are respectively disposed in the plurality of openings. Each channel layer is in contact with a corresponding fin and extends to cover a lower sidewall of a corresponding isolation structure, thereby forming a U-shaped structure. The gate structure is filled in the plurality of openings and extends to cover the top surface of the plurality of isolation structures.

Abstract: Pyrrolo[2,1-f][1,2,4]triazine compounds for treating various diseases and pathologies are disclosed. More particularly, the present disclosure concerns the use of pyrrolo[2,1-f][1,2,4]triazine compounds or analogs thereof, in the treatment of disorders characterized by overexpression of DYRK1A (e.g., cancer, Down syndrome, Alzheimer’s disease, diabetes, viral infections, and osteoarthritis).

Abstract: Isoquinoline compounds for treating various diseases and pathologies are disclosed. More particularly, the present invention concerns the use of an isoquinoline compound or analogs thereof, in the treatment of disorders characterized by the activation of Wnt pathway signaling (e.g., cancer, abnormal cellular proliferation, angiogenesis, fibrotic disorders, bone or cartilage diseases, and osteoarthritis), the modulation of cellular events mediated by Wnt pathway signaling, as well as genetic diseases and neurological conditions/disorders/diseases due to mutations or dysregulation of the Wnt pathway and/or of one or more of Wnt signaling components. Also provided are methods for treating Wnt-related disease states.

Abstract: A three-dimensional semiconductor device includes multiple semiconductor device layers on a substrate, wherein each layer includes a first stacked structure, a first gate dielectric layer, a first semiconductor layer, a first channel layer, a first source region, a first drain region, and a first resistive random access memory cell. The first stacked structure on the substrate includes a first insulating layer and a first gate conductor layer. The first gate dielectric layer surrounds a sidewall of the first stacked structure. The first semiconductor layer surrounds a sidewall of the first gate dielectric layer. The first channel layer is in the first semiconductor layer. The first source region and the first drain region are on both sides of the first channel layer in the first semiconductor layer. The first resistive random access memory cell is on a first sidewall of the first semiconductor layer and connected to the first drain region.

Abstract: An electronic package is provided in which a chip packaging module, an electronic element having a plurality of contacts, and an electronic connector are disposed on a routing structure of a carrier component, so as to communicatively connect with the chip packaging module via the electronic element and the electronic connector, thereby increasing a signal transmission speed.

Abstract: An electronic package is provided, in which an electronic module and at least one support member are disposed on a substrate structure having a circuit layer, such that the stress on the substrate structure is dispersed through the at least one support member to eliminate the problem of stress concentration and prevent the substrate structure from warping.

Abstract: Indazole compounds for treating various diseases and pathologies are disclosed. More particularly, the present disclosure concerns the use of an indazole compound or analogs thereof, in the treatment of disorders characterized by the activation of Wnt pathway signaling (e.g., tendinopathy, dermatitis, psoriasis, morphea, ichthyosis, Raynaud's syndrome, Darier's disease, scleroderma, cancer, abnormal cellular proliferation, angiogenesis, Alzheimer's disease, lung disease, and osteoarthritis), the modulation of cellular events mediated by Wnt pathway signaling, as well as neurological conditions/disorders/diseases linked to overexpression of DYRK1A.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a conductive line structure and a memory unit. The conductive line structure is disposed in an array area and a periphery circuit area. The memory unit is disposed on the conductive line structure in the array area. The memory unit includes a lower electrode, a resistive switching layer, and an upper electrode. The lower electrode is disposed on the conductive line structure. The resistive switching layer is disposed on the lower electrode. The upper electrode is disposed on the resistive switching layer. The upper surface of the conductive line structure is in direct contact with the lower electrode.

Abstract: A method for comparing content of two document files each having a plurality of content blocks is provided. The method is to be implemented by an electronic device and includes the steps of: performing, for the each of the content blocks in each of the document files, a pre-process operation so as to obtain a plurality of properties associated with the content block; comparing, for each content block from one of the document files, the properties thereof with the properties of each of the plurality of content blocks of the other one of the document files; and generating a comparison result based on the operations of the comparing.

Abstract: Pyrrolo[2,3-b]pyridine compound for treating various diseases and pathologies are disclosed. More particularly, the present disclosure concerns the use of pyrrolo[2,3-b]pyridine compound or analogs thereof, in the treatment of disorders characterized by overexpression of DYRK1A (e.g., cancer, Down syndrome, Alzheimer's disease, diabetes, viral infections, and osteoarthritis).

Abstract: Isoquinoline compounds for treating various diseases and pathologies are disclosed. More particularly, the present disclosure concerns the use of an isoquinoline compound or analogs thereof, in the treatment of disorders characterized by the activation of Wnt pathway signaling (e.g., cancer, abnormal cellular proliferation, angiogenesis, Alzheimer's disease, lung disease, inflammation, auto-immune diseases and osteoarthritis), the modulation of cellular events mediated by Wnt pathway signaling, as well as neurological conditions/disorders/diseases linked to overexpression of DYRK1A.

Abstract: 7H-Pyrrolo[2,3-d]pyrimidine compound for treating various diseases and pathologies are disclosed. More particularly, the present disclosure concerns the use of 7H-pyrrolo[2,3-d]pyrimidine compounds or analogs thereof, in the treatment of disorders characterized by overexpression of DYRK1A (e.g., cancer, Down syndrome, Alzheimer's disease, diabetes, viral infections, and osteoarthritis).

Abstract: An electronic package is provided in which an electronic module and a heat dissipation structure combined with the electronic module are disposed on a carrier structure, and at least one adjustment structure is coupled with the heat dissipation structure and located around the electronic module. Therefore, the adjustment structure disperses thermal stress to avoid warpage of the electronic module.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a metal oxide layer including a plurality of conductive filament regions formed on the bottom electrode, and a plurality of top electrodes formed on the metal oxide layer, corresponding to the respective conductive filament regions. Each of the conductive filament regions has a bottom portion and a top portion. The width of the bottom portion is greater than that of the top portion. The conductive filament regions include oxygen vacancies, and regions other than the conductive filament regions in the metal oxide layer are nitrogen-containing regions.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: Provided is an electronic package providing a circuit structure having auxiliary circuit layers. Further, an electronic component is disposed on the circuit structure and electrically connected to the auxiliary circuit layers. In addition, an encapsulant covers the electronic component, and the circuit structure is disposed on the package substrate having a plurality of main circuit layers, such that the main circuit layers are electrically connected to the auxiliary circuit layers. As such, a number of layers of the auxiliary circuit layers is used to replace a layer number configuration of the main circuit layers.

Abstract: Isoquinoline compounds for treating various diseases and pathologies are disclosed. More particularly, the present disclosure concerns the use of an isoquinoline compound or analogs thereof, in the treatment of disorders characterized by the activation of Wnt pathway signaling (e.g., cancer, abnormal cellular proliferation, angiogenesis, Alzheimer's disease, lung disease, inflammation, auto-immune diseases and osteoarthritis), the modulation of cellular events mediated by Wnt pathway signaling, as well as neurological conditions/disorders/diseases linked to overexpression of DYRK1A.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A semiconductor structure is formed on a first surface of a silicon substrate. The semiconductor structure has a first surface facing the silicon substrate. At least one outer circuit is bonded to the semiconductor structure. A molding compound layer is formed covering a second surface of the silicon substrate. A part of the molding compound layer is removed for exposing the silicon substrate. The silicon substrate is removed for exposing the first surface of the semiconductor structure.

Abstract: A semiconductor device includes at least one active region, a first dielectric layer, a gate structure, and an air void. The active region includes a III-V compound semiconductor layer. The first dielectric layer is disposed on the active region. The gate structure is disposed on the active region, and at least a part of the gate structure is disposed in the first dielectric layer. The air void is disposed in the first dielectric layer, and at least a part of the air void is disposed at two opposite sides of the gate structure in a horizontal direction.

Abstract: Isoquinoline compounds for treating various diseases and pathologies are disclosed. More particularly, the present invention concerns the use of an isoquinoline compound or analogs thereof, in the treatment of disorders characterized by the activation of Wnt pathway signaling (e.g., cancer, abnormal cellular proliferation, angiogenesis, fibrotic disorders, bone or cartilage diseases, and osteoarthritis), the modulation of cellular events mediated by Wnt pathway signaling, as well as genetic diseases and neurological conditions/disorders/diseases due to mutations or dysregulation of the Wnt pathway and/or of one or more of Wnt signaling components. Also provided are methods for treating Wnt-related disease states.