Abstract: A resistive random access memory including first and second electrodes, a resistance variable layer, first and second metal layers and a resistance stabilizing layer is provided. The second electrode is disposed on the first electrode. The resistance variable layer is disposed between the first and second electrodes. The first metal layer is disposed between the resistance variable layer and the second electrode. The second metal layer is disposed between the first metal layer and the second electrode. The resistance stabilizing layer is disposed between the first and second metal layers. The oxygen content of the resistance variable layer is higher than that of the first metal layer, the oxygen content of the first metal layer is higher than that of the resistance stabilizing layer, the oxygen content of the resistance stabilizing layer is higher than that of the second metal layer.

Abstract: A dental oral appliance for using inside an oral cavity, where the oral cavity has an upper row of teeth, a lower row of teeth, a tongue, and an upper jaw. The upper and lower row of teeth define a lingual side. The dental oral appliance includes a separating portion and a tongue supporting portion, where an upper teeth region is defined above the separating portion and a lower teeth region is defined underneath thereof. The upper teeth region is adjacently disposed around the upper row of teeth, and the lower teeth region is adjacently disposed around the lower row of teeth. The outer edge of the tongue supporting portion is connected to one side of the separating portion close to the tongue.

Abstract: A orthodontic suite and its manufacturing method for multistage treating malocclusion or abnormal alignment of the teeth and jaws are suggest. The orthodontic suite has a first stage and a second orthodontic appliances, in which the first orthodontic appliance includes a first stage arch, first stage anchoring troughs and first stage adapting troughs disposed on the first stage arch. The second orthodontic appliance includes a second stage arch, second stage anchoring troughs and second stage adapting troughs disposed on the second stage arch. The positions of second stage anchoring troughs are identical to the first stage anchoring troughs, and the positions of the second stage adapting troughs are shifting or rotating based on the first stage adapting troughs.

Abstract: A system includes a memory and a processor configured to execute computer instructions stored in the memory that when executed cause the system to perform operations. The computer instructions include a learning component that includes one or more trained models to learn pathogenic features of a given fungal species based on learning from a plurality of stored fungal species images. A fungal identifier component employs the trained models to determine pathogenic parameters of an unidentified fungal species image based on the learned pathogenic features. The fungal identifier component generates an output file that classifies the unidentified fungal species image according to the determined pathogenic parameters from the unidentified fungal species image.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: The invention provides a large vehicle turning safety warning apparatus, which is mainly through a warning device set on at least one turning warning zone of a car body, and a control signal is generated by a control module to control the starting or closing of the warning device, or to control the warning device to execute a warning mode. In this way, when vehicles or pedestrians approach the car body, the warning device can be known by the warning device, so as to evade the invisible zone of the car body. Thus, the safety of driving is increased to avoid the occurrence of related traffic accidents because the driver of the car body cannot know whether there are pedestrians or related vehicles in the invisible zone.

Abstract: A resistive random access memory including first and second electrodes, a resistance variable layer, first and second metal layers and a resistance stabilizing layer is provided. The second electrode is disposed on the first electrode. The resistance variable layer is disposed between the first and second electrodes. The first metal layer is disposed between the resistance variable layer and the second electrode. The second metal layer is disposed between the first metal layer and the second electrode. The resistance stabilizing layer is disposed between the first and second metal layers. The oxygen content of the resistance variable layer is higher than that of the first metal layer, the oxygen content of the first metal layer is higher than that of the resistance stabilizing layer, the oxygen content of the resistance stabilizing layer is higher than that of the second metal layer.

Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer and a through hole passing through the first dielectric layer over a substrate; forming a plurality of dummy contacts in the through hole; forming a plurality of first dummy wires on the plurality of dummy contacts; filling a second dielectric layer between the plurality of first dummy wires, wherein the second dielectric layer has a first air gap; removing the dummy contacts and the first dummy wires to expose the through hole, thereby forming a first wiring trench over the through hole; and forming a contact and a first wire in the through hole and the first wiring trench.

Abstract: Isoquinoline compounds for treating various diseases and pathologies are disclosed. More particularly, the present invention concerns the use of an isoquinoline compound or analogs thereof, in the treatment of disorders characterized by the activation of Wnt pathway signaling (e.g., cancer, abnormal cellular proliferation, angiogenesis, fibrotic disorders, bone or cartilage diseases, and osteoarthritis), the modulation of cellular events mediated by Wnt pathway signaling, as well as genetic diseases and neurological conditions/disorders/diseases due to mutations or dysregulation of the Wnt pathway and/or of one or more of Wnt signaling components. Also provided are methods for treating Wnt-related disease states.

Abstract: Indazole compounds for treating various diseases and pathologies are disclosed. More particularly, the present disclosure concerns the use of an indazole compound or analogs thereof, in the treatment of disorders characterized by the activation of Wnt pathway signaling (e.g., tendinopathy, dermatitis, psoriasis, morphea, ichthyosis, Raynaud's syndrome, Darier's disease, scleroderma, cancer, abnormal cellular proliferation, angiogenesis, Alzheimer's disease, lung disease, and osteoarthritis), the modulation of cellular events mediated by Wnt pathway signaling, as well as neurological conditions/disorders/diseases linked to overexpression of DYRK1A.

Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.

Abstract: Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a metal oxide layer including a plurality of conductive filament regions formed on the bottom electrode, and a plurality of top electrodes formed on the metal oxide layer, corresponding to the respective conductive filament regions. Each of the conductive filament regions has a bottom portion and a top portion. The width of the bottom portion is greater than that of the top portion. The conductive filament regions include oxygen vacancies, and regions other than the conductive filament regions in the metal oxide layer are nitrogen-containing regions.

Abstract: A method for dyeing a functional contact lens includes steps of: providing a lens body; formulating a first solution, wherein the first solution is an ionic salt solution containing an alkali; placing the lens body in the first solution and reacting at 30° C. to 80° C.; formulating a second solution, wherein the second solution is an ionic salt solution containing at least one reactive dye; and placing the lens body in the second solution and reacting at 30° C. to 80° C.; wherein the at least one reactive dye reacts with the lens body to be fixed to a surface portion of the lens body. In order to achieve one or a portion or all of the above or other objects, the present invention further provides a functional contact lens including a lens body and a dye layer on a surface of the lens body and can be obtained by the aforementioned method.

Abstract: Provided is a resistive random access memory (RRAM) including at least one memory cell. The at least one memory cell includes a top electrode, a bottom electrode, a data storage layer, an oxygen gettering layer, a first barrier layer, and an oxygen supplying layer. The data storage layer is disposed between the top electrode and the bottom electrode. The oxygen gettering layer is disposed between the data storage layer and the top electrode. The first barrier layer is disposed between the oxygen gettering layer and the data storage layer. The oxygen supplying layer is disposed between the oxygen gettering layer and the top electrode and/or between the oxygen gettering layer and the first barrier layer.

Abstract: A semiconductor device includes a substrate, a first III-V compound layer, a gate electrode, drain trenches, and at least one drain electrode. The drain trenches are disposed and arranged with high integrity. The substrate has a first side and a second side opposite to the first side. The first III-V compound layer is disposed at the first side of the substrate. The gate electrode is disposed on the first III-V compound layer. Each of the drain trenches extends from the second side of the substrate toward the first side of the substrate and penetrates the substrate. The drain trenches are arranged regularly. The drain electrode is disposed in at least one of the drain trenches.

Abstract: The invention provides a large vehicle turning safety warning apparatus, which is mainly through a warning device set on at least one turning warning zone of a car body, and a control signal is generated by a control module to control the starting or closing of the warning device, or to control the warning device to execute a warning mode. In this way, when vehicles or pedestrians approach the car body, the warning device can be known by the warning device, so as to evade the invisible zone of the car body. Thus, the safety of driving is increased to avoid the occurrence of related traffic accidents because the driver of the car body cannot know whether there are pedestrians or related vehicles in the invisible zone.

Abstract: A method of manufacturing a carrying substrate is provided. At least one circuit component is disposed on a first circuit structure. An encapsulation layer is formed on the first circuit structure and encapsulates the circuit component. A second circuit structure is formed on the encapsulation layer and electrically connected to the circuit component. The circuit component is embedded in the encapsulation layer via an existing packaging process. Therefore, the routing area is increased, and a package substrate requiring a large size has a high yield and low manufacturing cost.

Abstract: Isoquinoline compounds for treating various diseases and pathologies are disclosed. More particularly, the present disclosure concerns the use of an isoquinoline compound or analogs thereof, in the treatment of disorders characterized by the activation of Wnt pathway signaling (e.g., cancer, abnormal cellular proliferation, angiogenesis, Alzheimer's disease, lung disease, inflammation, auto-immune diseases and osteoarthritis), the modulation of cellular events mediated by Wnt pathway signaling, as well as neurological conditions/disorders/diseases linked to overexpression of DYRK1A.

Abstract: A telescopic casing includes first end portion, second end portion, first support spring, third end portion, and second support spring. Each of the first, second, and third end portions has a hollow tubular shape. Top end of first end portion is detachably coupled to dental handpiece. Top end of second end portion is nested by rear end of first end portion. First support spring is disposed in first end portion, wherein one end of first support spring abuts against top end of second end portion and the other end of first support spring abuts against first end portion. Top end of third end portion is nested by rear end of second end portion. Second support spring is disposed in second end portion, wherein one end of second support spring abuts against top end of third end portion and the other end of second support spring abuts against second end portion.