Abstract: A semiconductor device structure, along with methods of forming such, are described. The method includes forming a first dielectric feature between first and the second fin structures, wherein each first and second fin structure includes first semiconductor layers and second semiconductor layers alternatingly stacked and in contact with the first dielectric layer. The method also includes removing the second semiconductor layers so that the first semiconductor layers of the first and second fin structures extend laterally from a first side and a second side of the first dielectric feature, respectively, trimming the first dielectric feature so that the first dielectric feature has a reduced thickness on both first and the second sides, and forming a gate electrode layer to surround each of the first semiconductor layers of the first and second fin structures.

Abstract: A projection system and a control method thereof are provided. The projection system includes a projector. The projector comprises a projection module and a processor. The processor is electrically coupled to the projection module. The projector confirms whether a first triggering event is detected and turns on a sleep aid mode in response to the first triggering event. The sleep aid mode corresponds to at least one control parameter. In the sleep aid mode, the projection module plays at least one multimedia file according to the at least one control parameter. The processor adjusts at least one parameter value of the at least one control parameter to adjust the at least one multimedia file correspondingly. The projector confirms whether a second triggering event is detected and the projection module stops playing the at least one multimedia file and turns off the sleep aid mode in response to the second triggering event.

Abstract: An electronic device includes a first part and a second part that can be folded or expanded relative to each other. The electronic device has a closed state and an open state When the electronic device is in the closed state, a frame of the first part and a frame of the second part partially or totally overlap. The first part includes a first feeding antenna. The second part includes a first parasitic antenna, and when the electronic device is in the closed state, the first parasitic antenna is not grounded and can be coupled to the first feeding antenna.

Abstract: A violation checking method includes generating a violation log report for a design, classifying violation logs in the violation log report into high-risk logs and low-risk logs by a machine learning model, reviewing the high-risk logs, and modifying the design if at least one bug is identified in the high-risk logs.

Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: Aspects of the present disclosure provide an automated labeling system. For example, the automated labeling system can include an automated labeling module (ALM) configured to receive wireless signals and ground truth of learning object and label the wireless signals with the ground truth when receiving the ground truth to generate labeled training data. The automated labeling system can also include a training database coupled to the ALM. The training database can be configured to store the labeled training data.

Abstract: A computing system performs artificial-intelligence (AI) super-resolution (SR). The computing system includes multiple processors, which further includes a graphics processing unit (GPU) and an AI processing unit (APU). The computing system also includes a memory to store AI models. When detecting an indication that the loading of the GPU exceeds a threshold, the processors reduce the resolution of a video output from the GPU in response to the indication. One of the AI models is selected based on graphics scenes in the video and the respective power consumption estimates of the AI models. The processors then perform AI SR operations on the video using the selected AI model to restore the resolution of the video for display.

Abstract: A semiconductor device includes a first active region, a second active region and a dielectric wall. The second active region disposed adjacent to the first active region, and there is a first space between the first active region and the second active region. The dielectric wall is formed within the first space and has a first sidewall and a second sidewall opposite to the first sidewall. The first sidewall and the second sidewall opposite to the first sidewall continuously extend along a plane.

Abstract: An antenna has an exciting element disposed above a ground plane of an electronic device. Power fed to the exciting element excites the ground plane to generate radiation. In this way, radiation capability of the ground plane is not affected by clearance between a display screen and the ground plane, and the antenna is applicable to an electronic device with limited antenna space. In addition, the ground plane serves as a radiation aperture of the electronic device.

Abstract: Embodiments provide a method of performing a carrier switch for a device wafer, attaching a second wafer and removing a first wafer. A buffer layer is deposited over the device wafer, buffer layer reducing the topography of the surface of the device wafer. After the carrier switch a film-on-wire layer is removed from the buffer layer and then the buffer layer is at least in part removed.

Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A cleaning process monitoring system, comprising: a cleaning container comprising an inlet for receiving a cleaning solution and an outlet for draining a waste solution; a particle detector coupled to the outlet and configured to measure a plurality of particle parameters associated with the waste solution so as to provide a real-time monitoring of the cleaning process; a pump coupled to the cleaning container and configured to provide suction force to draw solution through the cleaning system; a controller coupled to the pump and the particle detector and configured to receive the plurality of particle parameters from the particle detector and to provide control to the cleaning system; and a host computer coupled to the controller and configured to provide at least one control parameter to the controller.

Abstract: A robotic bronchoscopy navigation method, performed by a processing control device, includes: performing a navigation procedure according to obtained navigation image, the navigation procedure including: determining whether the navigation image has a node, if the navigation image does not have the node, controlling a bending part of a robotic bronchoscopy to move toward an image center of the navigation image, if the navigation image has the node, calculating a distance between the bronchoscopy and the node, controlling the bending part to move according to a default branch when the distance is smaller than a threshold of distance, and determining whether the default branch is a destination branch where a destination is located, if the default branch is not the destination branch, obtaining another navigation image, and performing the navigation procedure on the another navigation image, and if the default branch is the destination branch, outputting a notification.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.