Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: A sensor is provided, including a substrate, a chip and a sensing element. The substrate has a plate-like shape and includes a surface and an interconnect structure disposed in the substrate. The chip is embedded in the substrate and is electrically connected to the interconnect structure. The sensing element is disposed on the surface of the substrate, and is electrically connected to the chip through the interconnect structure.

Abstract: A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: A digital circuit device includes a power supply circuitry, a digital circuitry, a digital circuitry, and a protection circuitry. The power supply circuitry is configured to output a supply voltage. The digital circuitry is configured to be driven by the supply voltage, and is configured to perform at least one operation according to a first clock signal. The protection circuitry is configured to generate the first clock signal according to at least one of a voltage drop of the supply voltage and a load signal sent from the digital circuitry.

Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.

Abstract: An in-memory computing device includes in some examples a two-dimensional array of memory cells arranged in rows and columns, each memory cell made of a nine-transistor current-based SRAM. Each memory cell includes a six-transistor SRAM cell and a current source coupled by a switching transistor, which is controlled by input signals on an input line, to an output line associates with the column of memory cells the memory cell is in. The current source includes a switching transistor controlled by the state of the six-transistor SRAM cell, and a current regulating transistor adapted to generate a current at a level determined by a control signal applied at the gate. The control signal can be set such that the total current in each output line is increased by a factor of 2 in each successive column of the memory cells.

Abstract: An oligomer is formed by reacting a diacid monomer with (a) epoxy resin or (b) glycidyl methacrylate, wherein the diacid monomer has a chemical structure of wherein X is —O—, and each R1 is independently CH3, CH2F, CHF2, or CF3. A composition containing the oligomer can be cured to serve as a sealant of an optoelectronic device, and the sealant can be lifted off by a laser beam irradiation.

Abstract: An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

Abstract: A reticle carrier described herein is configured to quickly discharge the residual charge on a reticle so as to reduce, minimize, and/or prevent particles in the reticle carrier from being attracted to and/or transferred to the reticle. In particular, the reticle carrier may be configured to provide reduced capacitance between an inner baseplate of the reticle carrier and the reticle. The reduction in capacitance may reduce the resistance-capacitance (RC) time constant for discharging the residual charge on the reticle, which may increase the discharge speed for discharging the residual charge through support pins of the reticle carrier. The increase in discharge speed may reduce the likelihood that an electrostatic force in the reticle carrier may attract particles in the reticle carrier to the reticle.

Abstract: A rapid heat dissipation device is provided to use for a heat source, and includes a heat conducting plate, a heat dissipating fin group, one or a plurality of heat pipes and a siphon heat-dissipating device. The heat conducting plate is thermally attached to the heat source. The heat dissipating fin group is arranged on one side of the heat conducting plate. One end of the heat pipe is fixed to the heat conducting plate, and another end is fixed to the heat dissipating fin group. The siphon heat-dissipating device is stacked above the heat pipe, and one end is fixed to the heat-conducting plate and another end is fixed to the heat-dissipating fin group. Through the siphon heat-dissipating device overlapping up and down with the heat pipe and having the same direction to achieve uniformly heat dissipating and cooling.

Abstract: A method includes forming a first mandrel pattern and a second mandrel pattern. The first mandrel pattern includes at least first and second mandrels for a mandrel-spacer double patterning process. The second mandrel pattern includes at least a third mandrel inserted between the first and second mandrels. The first mandrel pattern and the second mandrel pattern include a same material. The first and second mandrels are merged together with the third mandrel to form a single pattern.

Abstract: A filter element and a projection device are provided. The filter element is configured on the transmission path of at least one light beam, and includes a substrate and a film. The film is located on a surface of the substrate, and includes a first area and a second area. The first area includes a center, corresponding to the central axis of the at least one light beam. The distance between the second area and the center of the first area is greater than the distance between any point in the first area and the center. The average thickness of the second area of the film is greater than the average thickness of the first area of the film. The filter element of the disclosure may still have a similar filter effect when the incident angle is relatively large.

Abstract: A clock multiplexer device includes first and second control circuitries and an output circuitry. The first control circuitry generates a first enable signal and a first signal according to a first clock signal and a first selection signal, and determines whether to output the first signal to be a first output clock signal according to a second selection signal and a second enable signal. The first and the second selection signals have opposite logic values. The second control circuitry generates the second enable signal and a second signal according to a second clock signal and the second selection signal, and determines whether to output the second signal to be a second output clock signal according to the first selection signal and the first enable signal. The output circuitry outputs one of the first output clock signal and the second output clock signal to be a final clock signal.

Abstract: A system is provided. The system includes an exposing device configured to generate a real-time image, including multiple first align marks, of a mask and an adjusting device configured to adjust an off-set of the mask from a pre-determined position to be smaller than a minimum aligning distance according to the first align marks and multiple align marks on a substrate, and further to move the mask closer to the pre-determined position to have a displacement, less than a minimum mapping distance, from the pre-determined position according to the real-time image and a reference image of the mask.

Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.

Abstract: A rapid heat dissipation device is provided to use for a heat source, and includes a heat conducting plate, a heat dissipating fin group, one or a plurality of heat pipes and a siphon heat-dissipating device. The heat conducting plate is thermally attached to the heat source. The heat dissipating fin group is arranged on one side of the heat conducting plate. One end of the heat pipe is fixed to the heat conducting plate, and another end is fixed to the heat dissipating fin group. The siphon heat-dissipating device is stacked above the heat pipe, and one end is fixed to the heat-conducting plate and another end is fixed to the heat-dissipating fin group. Through the siphon heat-dissipating device overlapping up and down with the heat pipe and having the same direction to achieve uniformly heat dissipating and cooling.

Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.

Abstract: A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.

Abstract: A light source for EUV radiation is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel to generate plasma as the EUV radiation. The controller is configured to provide the control signal according to the temperature of the source vessel and droplet positions of the target droplets. When the temperature of the source vessel exceeds a temperature threshold value and a standard deviation of the droplet positions of the target droplets exceeds a first standard deviation threshold value, the controller is configured to provide the control signal to the laser generator, so as to stop providing the first laser pulses.