Abstract: A reticle, a reticle container and a method of lithography process are provided. The reticle container includes: a cover configured to protect a reticle, a baseplate, and a discharging device on the baseplate. The baseplate has: a top surface configured to engage to the cover and a bottom surface opposite to the top surface. The discharging device is configured to neutralize static charges accumulated on the reticle.

Abstract: A device includes a Static Random Access Memory (SRAM) array, and an SRAM cell edge region abutting the SRAM array. The SRAM array and the SRAM cell edge region in combination include first gate electrodes having a uniform pitch. A word line driver abuts the SRAM cell edge region. The word line driver includes second gate electrodes, and the first gate electrodes have lengthwise directions aligned to lengthwise directions of respective ones of the second gate electrodes.

Abstract: An EUV photolithography system utilizes a baseplate of an EUV pod to unload an EUV reticle from a chuck within an EUV scanner. The baseplate includes a top surface and support pins extending from the top surface. The when the reticle is unloaded onto the baseplate, the support pins hold the reticle at relatively large distance from the top surface of the baseplate. The support pins have a relatively low resistance. The large distance and low resistance help ensure that particles do not travel from the baseplate to the reticle during unloading.

Abstract: A double-sided optically clear adhesive is provided. The double-sided optically clear adhesive includes a first adhesive layer and a second adhesive layer. The first adhesive layer includes a first resin and a first thermal-crosslinking agent. The first resin includes a hydroxyl group. The first thermal-crosslinking agent includes a first group. The second adhesive layer includes a second resin and a second thermal-crosslinking agent. The second resin includes a hydroxyl group. The second thermal-crosslinking agent includes a second group. The ratio of the equivalent number of the first group of the first thermal-crosslinking agent to the equivalent number of the hydroxyl group of the first resin is represented by r1. The ratio of the equivalent number of the second group of the second thermal-crosslinking agent to the equivalent number of the hydroxyl group of the second resin is represented by r2, wherein r1<r2?0.8 and r2?r1?0.025.

Abstract: An in-memory computing device includes in some examples a two-dimensional array of memory cells arranged in rows and columns, each memory cell made of a nine-transistor current-based SRAM. Each memory cell includes a six-transistor SRAM cell and a current source coupled by a switching transistor, which is controlled by input signals on an input line, to an output line associates with the column of memory cells the memory cell is in. The current source includes a switching transistor controlled by the state of the six-transistor SRAM cell, and a current regulating transistor adapted to generate a current at a level determined by a control signal applied at the gate. The control signal can be set such that the total current in each output line is increased by a factor of 2 in each successive column of the memory cells.

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: A reticle carrier described herein is configured to quickly discharge the residual charge on a reticle so as to reduce, minimize, and/or prevent particles in the reticle carrier from being attracted to and/or transferred to the reticle. In particular, the reticle carrier may be configured to provide reduced capacitance between an inner baseplate of the reticle carrier and the reticle. The reduction in capacitance may reduce the resistance-capacitance (RC) time constant for discharging the residual charge on the reticle, which may increase the discharge speed for discharging the residual charge through support pins of the reticle carrier. The increase in discharge speed may reduce the likelihood that an electrostatic force in the reticle carrier may attract particles in the reticle carrier to the reticle.

Abstract: An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

Abstract: A method includes transporting a cleaning mask and a photomask into an enclosure of a lithography exposure apparatus, wherein the photomask includes a multilayered mirror structure, and the cleaning mask is free of the multilayered mirror structure; placing the cleaning mask on a reticle stage of the lithography exposure apparatus; and charging the cleaning mask to attract charged particles in the enclosure.

Abstract: A system is disclosed. The system includes a cleaning device and a scanner device. The cleaning device is configured to clean a mask. The scanner device is coupled to the cleaning device and is configured to receive the mask, a reference image and a real-time image that is captured at the mask. The reference image includes at least one first mark image having a plurality of mapping marks on the mask. The real-time image includes at least one second mark image having the plurality of mapping marks on the mask. The scanner device is configured to map the at least one second mark image in the real-time image with the at least one first image in the reference image, when a lithography exposing process is performed. A method is also disclosed herein.

Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.

Abstract: An illumination system, a projection device, and a projection control method are provided. The illumination system includes a first light-emitting unit, a second light-emitting unit, a third light-emitting unit, a first dichroic element, a second dichroic element, and a control unit. The first light-emitting unit includes a first light-emitting element and a second light-emitting element. The control unit is electrically connected to the first light-emitting unit and configured to switch the illumination system between a high-performance mode and a high-chroma mode, wherein when the illumination system is in the high-performance mode, the control unit controls a current ratio of the second light-emitting element to be greater than a current ratio of the first light-emitting element, and when the illumination system is in the high-chroma mode, the control unit controls the current ratio of the second light-emitting element to be less than the current ratio of the first light-emitting element.

Abstract: An oligomer is formed by reacting a diacid monomer with (a) epoxy resin or (b) glycidyl methacrylate, wherein the diacid monomer has a chemical structure of wherein X is —O—, and each R1 is independently CH3, CH2F, CHF2, or CF3. A composition containing the oligomer can be cured to serve as a sealant of an optoelectronic device, and the sealant can be lifted off by a laser beam irradiation.

Abstract: A heat dissipation apparatus includes a vapor chamber and multiple flow field fins. The vapor chamber includes a lower plate part and an upper plate part. The lower plate part includes multiple flow channels, a first and a second confluence areas formed on the flow channels. The upper plate part covers on the lower plate part to enclose the flow channels, the first and second confluence areas. Each flow field fin includes an inlet channel, an outlet channel, and a circuitous channel. The inlet channel communicates with the first confluence area, the outlet channel communicates with the second confluence area, and the circuitous channel communicates between the inlet channel and the outlet channel in a single flow direction. The flow field fins are collectively as an inlet surface at one side adjacent to the outlet channel and as an outlet surface at another side adjacent to the inlet channel.

Abstract: A combination toilet unblocking/cleaning apparatus for providing both a toilet unblocking and toilet cleaning tool in one convenient unit. The toilet unblocking tool further includes an adjustable auger, a combined tongs, and a detachable rod. Wherein, the adjustable auger includes two drain cleaning cable connected to a slider and slidable held in an elongated sleeve member; and the detachable rod is removably attached to the adjustable auger to form a combined tongs, constructed in such manner that the rod member can be used individually as drain rod. Also, the combination toilet cleaning tool is using the combined tongs as a handle with a plurality of different detachable bathroom accessories. Accessories may include a brush, a plunger, and a scraper; in which the brush, the plunger, and the scraper are configured to be selectively and removably coupled to the combined tongs.

Abstract: A device includes a Static Random Access Memory (SRAM) array, and an SRAM cell edge region abutting the SRAM array. The SRAM array and the SRAM cell edge region in combination include first gate electrodes having a uniform pitch. A word line driver abuts the SRAM cell edge region. The word line driver includes second gate electrodes, and the first gate electrodes have lengthwise directions aligned to lengthwise directions of respective ones of the second gate electrodes.

Abstract: An EUV photolithography system utilizes a baseplate of an EUV pod to unload an EUV reticle from a chuck within an EUV scanner. The baseplate includes a top surface and support pins extending from the top surface. The when the reticle is unloaded onto the baseplate, the support pins hold the reticle at relatively large distance from the top surface of the baseplate. The support pins have a relatively low resistance. The large distance and low resistance help ensure that particles do not travel from the baseplate to the reticle during unloading.

Abstract: A reticle carrier described herein is configured to quickly discharge the residual charge on a reticle so as to reduce, minimize, and/or prevent particles in the reticle carrier from being attracted to and/or transferred to the reticle. In particular, the reticle carrier may be configured to provide reduced capacitance between an inner baseplate of the reticle carrier and the reticle. The reduction in capacitance may reduce the resistance-capacitance (RC) time constant for discharging the residual charge on the reticle, which may increase the discharge speed for discharging the residual charge through support pins of the reticle carrier. The increase in discharge speed may reduce the likelihood that an electrostatic force in the reticle carrier may attract particles in the reticle carrier to the reticle.