Patents by Inventor Chih Lin
Chih Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240157217Abstract: A golf teaching method and a golf teaching system are provided. The golf teaching method includes: configuring image capturing devices and golf simulator to capture swing images and corresponding simulator data records, when a user performs a golf swing; configuring an expert model that includes expert motion information and corresponding correction suggestion information; configuring a computing device to perform an analysis process on the swing images and the simulator data records to divide the golf swing into user motions according to stages and obtaining records of user motion information corresponding to the plurality of stages, and to compare the user motion information with the corresponding expert motion information in each stage through the expert model, and to provide the corresponding correction suggestion information according to a comparison result; and configuring a user interface to provide the correction suggestion information.Type: ApplicationFiled: April 20, 2023Publication date: May 16, 2024Inventors: CHENG-HUNG TSAI, CHIA-YU JIH, CHIH-CHUNG CHIEN, LI-LIN LU, SHAO-JUN TAN, WEN-FU LAI
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Publication number: 20240162227Abstract: A semiconductor device structure, along with methods of forming such, are described. The method includes forming a first dielectric feature between first and the second fin structures, wherein each first and second fin structure includes first semiconductor layers and second semiconductor layers alternatingly stacked and in contact with the first dielectric layer. The method also includes removing the second semiconductor layers so that the first semiconductor layers of the first and second fin structures extend laterally from a first side and a second side of the first dielectric feature, respectively, trimming the first dielectric feature so that the first dielectric feature has a reduced thickness on both first and the second sides, and forming a gate electrode layer to surround each of the first semiconductor layers of the first and second fin structures.Type: ApplicationFiled: November 19, 2023Publication date: May 16, 2024Inventors: Guan-Lin CHEN, Kuo-Cheng CHIANG, Shi Ning JU, Jung-Chien CHENG, Chih-Hao WANG, Kuan-Lun CHENG
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Publication number: 20240162064Abstract: A die sorter tool may include a first conveyor, and a first lane to receive, from one or more load ports and via the first conveyor, a carrier with a set of dies. The die sorter tool may include a die flip module to receive the carrier from the first lane, manipulate one or more dies of the set of dies by changing orientations of the one or more dies, and return the one or more dies to the carrier after manipulating the one or more dies and without changing positions of the one or more dies within the carrier. The die sorter tool may include a second conveyor, and a second lane to receive, via the second conveyor, the carrier from the die flip module, and provide, via the first conveyor, the carrier to the one or more load ports.Type: ApplicationFiled: January 23, 2024Publication date: May 16, 2024Inventors: Chih-Hung HUANG, Cheng-Lung WU, Zheng-Lin HE, Yang-Ann CHU, Jiun-Rong PAI, Hsuan LEE
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Publication number: 20240156405Abstract: A smart wearable device has a signal calibration function executed by a signal calibration method and applied to a finger, a limb and/or a neck of a user. The smart wearable device includes at least one physiological signal detector, at least one pressure detector and an operation processor. The at least one physiological signal detector is adapted to abut against a detection area of the user for detecting a physiological signal. The at least one pressure detector is disposed around the at least one physiological signal detector and adapted to detect a pressure value of the detection area. The operation processor is electrically connected with the at least one physiological signal detector and the at least one pressure detector. The operation processor is adapted to optimize the physiological signal when the pressure value exceeds a predefined pressure threshold.Type: ApplicationFiled: January 12, 2024Publication date: May 16, 2024Applicant: PixArt Imaging Inc.Inventors: Yung-Chang Lin, Jian-Cheng Liao, Chun-Chih Chen, Sen-Huang Huang, Yen-Min Chang
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Publication number: 20240157496Abstract: A method for facilitating analysis of causes of machining defects is provided. The method is carried out by a computer system. The method includes the step of obtaining motion data and vibration acceleration data about the tip of a cutter mounted on a machine tool. The method further includes the step of obtaining time-frequency information about the vibration acceleration data by performing a time-frequency analysis on the vibration acceleration data. The method further includes the step of obtaining vibration-displacement data by normalizing the time-frequency information. The method further includes the step of obtaining amplitude-distribution data about the tip by synchronizing the motion data and the vibration-displacement data.Type: ApplicationFiled: December 19, 2022Publication date: May 16, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chun-Ting CHEN, Jheng-Jie LIN, Chien-Chih LIAO, Jen-Ji WANG
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Patent number: 11984488Abstract: Methods and devices that include a multigate device having a channel layer disposed between a source feature and a drain feature, a metal gate that surrounds the channel layer, and a first air gap spacer interposing the metal gate and the source feature and a second air gap spacer interposing the metal gate and the drain feature. A backside contact extends to the source feature. A power line metallization layer is connected to the backside contact.Type: GrantFiled: April 30, 2021Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Guan-Lin Chen, Kuo-Cheng Chiang, Shi Ning Ju, Chih-Hao Wang, Kuan-Lun Cheng
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Patent number: 11984381Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a carrier substrate, an interposer substrate, a semiconductor device, a lid, and a thermal interface material. The interposer substrate is disposed on the carrier substrate. The semiconductor device is disposed on the interposer substrate. The lid is disposed on the carrier substrate to cover the semiconductor device. The thermal interface material is disposed between the lid and the semiconductor device. A first recess is formed on a lower surface of the lid facing the semiconductor device, and the first recess overlaps the semiconductor device in a top view.Type: GrantFiled: November 16, 2021Date of Patent: May 14, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Chen Lai, Ming-Chih Yew, Po-Yao Lin, Chin-Hua Wang, Shin-Puu Jeng
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Patent number: 11984090Abstract: The present invention provides four-particle electrophoretic displays with improved driving methods to achieve better color separation between adjacent pixel electrodes. The driving methods improve the color state performance when a first pixel is displaying a mixed state of a first highly-charged particle and a second lower-charged particle of the opposite polarity, while a neighboring pixel is displaying a state of a second highly-charged particle having the opposite polarity to the first highly-charged particle. The particles can be, for example, all reflective or one type of particle can be partially light transmissive.Type: GrantFiled: November 30, 2022Date of Patent: May 14, 2024Assignee: E Ink CorporationInventors: Chih-Yu Cheng, Craig Lin, Ning-Wei Jan, Chen-Kai Chiu, Feng-Shou Lin
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Patent number: 11982019Abstract: A crystal growth doping apparatus and a crystal growth doping method are provided. The crystal growth doping apparatus includes a crystal growth furnace and a doping device that includes a feeding tube inserted to the furnace body along an oblique insertion direction, and a storage cover and a gate tube that are disposed in the feeding tube. The feeding tube extends from an outer surface thereof to form a placement opening, and the placement opening is recessed from an edge thereof to form an upper recessed portion and a lower recessed portion along the oblique insertion direction. The storage cover includes a storage tank and a handle. When the storage cover is disposed in the gate tube body, the gate tube body is configured to isolate an inner space of the feeding tube from the placement opening.Type: GrantFiled: May 27, 2022Date of Patent: May 14, 2024Assignee: GLOBALWAFERS CO., LTD.Inventors: Yu-Chih Chu, Tang-Chi Lin, Han-Sheng Wu, Hsien-Ta Tseng
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Publication number: 20240154015Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.Type: ApplicationFiled: March 22, 2023Publication date: May 9, 2024Inventors: Jui-Lin CHEN, Hsin-Wen SU, Chih-Ching WANG, Chen-Ming LEE, Chung-I YANG, Yi-Feng TING, Jon-Hsu HO, Lien-Jung HUNG, Ping-Wei WANG
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Publication number: 20240152288Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.Type: ApplicationFiled: January 15, 2024Publication date: May 9, 2024Applicant: Silicon Motion, Inc.Inventors: Tsung-Chieh Yang, Chun-Chieh Kuo, Ching-Hui Lin, Yang-Chih Shen
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Publication number: 20240150656Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, a fourth repeating unit, and a fifth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), the fourth repeating unit has a structure of Formula (IV), and the fifth repeating unit has a structure of Formula (V), a structure of Formula (VI), or a structure of Formula (VII) wherein A1, A2, A3, A4, X1, Z1, R1, R2, R3 and Q are as defined in the specification.Type: ApplicationFiled: September 22, 2023Publication date: May 9, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Lin CHU, Jen-Chun CHIU, Po-Hsien HO, Yu-Min HAN, Meng-Hsin CHEN, Chih-Hsiang LIN
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Publication number: 20240148301Abstract: The present invention provides a smart wearable device, which is held on an upper body of a wearer by a plurality of contact pad sets, and has a connection unit, a first sensing module, a second sensing module, and an extension unit.Type: ApplicationFiled: November 7, 2022Publication date: May 9, 2024Inventors: Chien-Hsiang Chang, Yang-Cheng Lin, Wei-Chih Lien, Tseng-Ping Chiu, Pei-Yun Wu, Bo Liu
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Publication number: 20240154043Abstract: A semiconductor device includes channel members vertically stacked, a gate structure wrapping around the channel members, a gate spacer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel members, and an inner spacer layer interposing the gate structure and the epitaxial feature. In a top view of the semiconductor device, the inner spacer layer has side portions in physical contact with the gate spacer and a middle portion stacked between the side portions. In a lengthwise direction of the channel members, the middle portion of the inner spacer layer is thicker than the side portions of the inner spacer layer.Type: ApplicationFiled: January 2, 2024Publication date: May 9, 2024Inventors: Kuo-Cheng Chiang, Shi Ning Ju, Guan-Lin Chen, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11978833Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.Type: GrantFiled: December 1, 2021Date of Patent: May 7, 2024Assignee: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Senpeng Huang, Junpeng Shi, Weng-Tack Wong, Shunyi Chen, Zhenduan Lin, Chih-wei Chao, Chen-ke Hsu
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Patent number: 11978640Abstract: In a method of forming a pattern over a semiconductor substrate, a target layer to be patterned is formed over a substrate, a mask pattern including an opening is formed in a mask layer, a shifting film is formed in an inner sidewall of the opening, a one-directional etching operation is performed to remove a part of the shifting film and a part of the mask layer to form a shifted opening, and the target layer is patterned by using the mask layer with the shifted opening as an etching mask. A location of the shifted opening is laterally shifted from an original location of the opening.Type: GrantFiled: April 9, 2021Date of Patent: May 7, 2024Inventors: Yi-Chen Lo, Yi-Shan Chen, Chih-Kai Yang, Pinyen Lin
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Patent number: 11978669Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.Type: GrantFiled: January 4, 2022Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Lin Chuang, Chia-Hao Chang, Sheng-Tsung Wang, Lin-Yu Huang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 11979720Abstract: A system for automatically adjusting a volume of a loudspeaker includes a loudspeaker and a processor. An infrared sensor, which generates a sensing signal when sensing IR radiation from a heat-radiating source, is disposed on the loudspeaker. The sensing signal provides a size information commensurate with a size of the heat-radiating source. The processor receives a plurality of the sensing signals at different time points to obtain a plurality of corresponding size information, realizes a change of distance between the heat-radiating source and the loudspeaker according to a change of the size information, and generates a volume-adjusting signal according to the change of distance between the heat-radiating source and the loudspeaker. The volume-adjusting signal is transmitted to the loudspeaker to adjust the volume of the loudspeaker accordingly.Type: GrantFiled: June 6, 2022Date of Patent: May 7, 2024Assignee: ALPHA NETWORKS INC.Inventor: Tzu-Chih Lin
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Publication number: 20240143880Abstract: A method includes determining a first timing of a transition sequence of a signal on a first path of an integrated circuit (IC) design, the first timing being based on an IC design signoff voltage, determining a second timing of the transition sequence of the signal on the first path, the second timing being based on the signoff voltage and a first voltage drop along the first path, calculating a first path derating factor based on a timing gap between the first and second timings of the transition sequence, and using the first path derating factor to evaluate the IC design.Type: ApplicationFiled: January 27, 2023Publication date: May 2, 2024Inventors: Yu-Wen LIN, Bogdan TUTUIANU, Florentin DARTU, Wei-Chih HSIEH, Osamu TAKAHASHI
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Patent number: D1027182Type: GrantFiled: August 15, 2022Date of Patent: May 14, 2024Assignees: Interface Technology (ChengDu) Co., Ltd., INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD., GENERAL INTERFACE SOLUTION LIMITEDInventors: Chun-Ming Cheng, Chih-Lin Liao, Yi-Chia Chiu, Chun-Ta Chen, Po-Lun Chen