Abstract: An environment-friendly cartridge is provided. The environment-friendly cartridge includes a body portion. The body portion has two end surfaces and an annular side surface connected to the two end surfaces. The body portion is composed of a smoke generating material. A plurality of gas communication structures are formed on the body portion. A plurality of openings in communication with the plurality of gas communication structures are formed on the two end surfaces. A pressure drop between 30 millimeters of water and 300 millimeters of water exists between the two end surfaces of the environment-friendly cartridge. The cartridge includes no filter and no cigarette paper, can be harmlessly degraded, and is environmentally friendly.

Abstract: A radio frequency (RF) tamper detector of an electronic device can offer improved chassis intrusion monitoring to protect the device from software and hardware-based tampering. The tamper detector can monitor RF noise levels in a first frequency band and in a second frequency band to calculate an RF noise level moving average for each frequency band. If the moving averages in both frequency bands exceed a RF noise threshold, the tamper detector can set a cover removal flag to indicate that a cover of the device housing has been removed. The tamper detector can cause the electronic device to lock or disable a system BIOS when cover removal is detected. Additionally, the electronic device can notify remote monitoring systems (e.g., operated by an IT administrator or warranty support center) to receive additional instructions to secure the device.

Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

Abstract: A method of controlling a wafer stage includes moving the wafer stage to position an immersion hood over a first sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a second sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a first particle capture area on the wafer stage after moving the wafer stage to position the immersion hood over the second sensor. The method further includes moving the wafer stage to define a routing track over the first particle capture area. The method further includes moving the wafer stage to position the immersion hood over an area for receiving a wafer on the wafer stage after defining the routing track over the first particle capture area.

Abstract: An antenna structure is disposed on a metal case. The metal case includes a surface. The antenna structure includes a slot and a metal unit. The slot is formed on the surface along a direction. The metal unit is disposed on the metal case. The metal unit includes at least one blocking part. The at least one blocking part is in contact with the surface, extended toward and crossed over the slot to separate the slot into a plurality of slot paths.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.

Abstract: A composite tray includes a tray body and an external supporting member. The tray body includes a loading plate and a plurality of side walls. The side walls protrude from the loading plate. The side walls and the loading plate jointly form an accommodating groove, and the accommodating groove has an opening. The external supporting member includes a supporting plate and a plurality of assembly members. The supporting plate is located in the accommodating groove and divides the accommodating groove into an inner space and an outer space. The inner space is located between the supporting plate and the loading plate. The outer space is located between the opening and the supporting plate. The assembly members are connected around the supporting plate and respectively assembled to the side walls, and a thickness of the supporting plate is less than a thickness of the loading plate.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a shield structure blocks the migration of charge to a semiconductor device from proximate a through substrate via (TSV). In some embodiments, the IC comprises a substrate, an interconnect structure, the semiconductor device, the TSV, and the shield structure. The interconnect structure is on a frontside of the substrate and comprises a wire. The semiconductor device is on the frontside of the substrate, between the substrate and the interconnect structure. The TSV extends completely through the substrate, from a backside of the substrate to the wire, and comprises metal. The shield structure comprises a PN junction extending completely through the substrate and directly between the semiconductor device and the TSV.

Abstract: An exhaust structure includes a piping section, wherein the piping section has a first inner diameter in a central region of the piping section, the piping section has a second diameter in at least one of an inlet or an outlet, and the second diameter has a same value as the first inner diameter. The exhaust structure further includes a plurality of smoothing layers configured to resist turbulence and condensation produced by a flow of one or more gasses in the piping section.

Abstract: A thermal module for being disposed in an electronic device comprises a driving device and at least one thermal device. The driving device includes a driving member and a driven member which are connected together, wherein the driving member is adapted to drive the driven member to operate. The at least one thermal device includes a fan, wherein two opposite ends of the fan respectively have a mating portion and a connecting portion. The mating portion is adapted to be connected to the driven member, so that the driving member drives the driven member to drive the fan to rotate. The connecting portion of the fan is adapted to be connected to the mating portion of a fan of another thermal device, so that when the driving member drives the fan to rotate, the fan drives the fan of the another thermal device to rotate.

Abstract: An example electronic device includes a network communication interface to connect to a conference server, a central control device communication interface to connect to a local central control device, a microphone and a processor. The processor is to receive audio at the microphone and send the audio to the local central control device and to the conference server. The processor is to send the audio to the local central control device such that it is received by a nearby electronic device before the audio is received from the conference server by the nearby electronic device.

Abstract: In some embodiments, the present disclosure relates to an integrated device, including a substrate; an interconnect structure disposed over the substrate, the interconnect structure including an dielectric; a first bottom electrode structure disposed in the dielectric, the first bottom electrode structure having a first width as measured between outer sidewalls of the first bottom electrode structure and a first depth as measured from an upper surface of the dielectric; and a second bottom electrode structure disposed in the dielectric and spaced apart from the first bottom electrode structure, the second bottom electrode structure having a second width as measured between outer sidewalls of the second bottom electrode structure and a second depth as measured from the upper surface of the dielectric; where the first width is greater than the second width and the first depth is greater than the second depth.

Abstract: An antenna structure includes a feeding radiation element, a connection radiation element, a first radiation element, a second radiation element, a first shorting radiation element, a second shorting radiation element, and a carrier element. The feeding radiation element has a feeding point. The connection radiation element is coupled to the feeding radiation element. The first radiation element is coupled to the connection radiation element. The second radiation element is coupled to the connection radiation element. The second radiation element and the first radiation element substantially extend in opposite directions. The feeding radiation element and the connection radiation element are coupled through the first shorting radiation element to a first grounding point. The second shorting radiation element is adjacent to the second radiation element. The connection radiation element and the first radiation element are coupled through the second shorting radiation element to a second grounding point.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.

Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface; a plurality of pixel sensors disposed in the substrate, a sensor isolation feature disposed in the substrate defining an active region, and a dielectric layer between the sensor isolation feature and the substrate, wherein the sensor isolation feature comprises a conductive material.

Abstract: A positioning device is provided, including: a base seat, including a plurality through holes and a slide groove; a clamping assembly, disposed within the slide groove, including a first clamping body and a second clamping body; an adjustment assembly, including a first driving rod, a second driving rod and at least one rotation rod, the first driving rod including a first thread section and a first bevel gear, the second driving rod including a second thread section and a second bevel gear, the first clamping body and the second clamping body are respectively screwed on the first thread section and the second thread section, each rotation rod including a third bevel gear, the third bevel gear respectively meshed with the first bevel gear and the second bevel gear.

Abstract: An electronic device and an antenna module are provided. The electronic device includes a metal housing with a slot having an open end and a first upper edge portion located at an upper edge of the slot. The antenna module is arranged in the metal housing and includes a carrier board, a feeding element, a radiating element with a feeding portion connected to the feeding element, and a first parasitic radiating element arranged on the carrier board and connected or coupled to the first upper edge portion. A vertical projection of the radiating element on the metal housing at least partially overlaps the slot. One side of the first parasitic radiating element is near an edge of the open end. The radiating element is fed with a signal through the feeding element to generate a resonant mode and is coupled to the slot to excite another resonant mode.

Abstract: This application describes systems and methods for assaying micro-objects in a microfluidic device. These methods include contacting a reagent with a micro-object by introducing a reagent in a first fluidic medium to a flow region of a microfluidic device, wherein the microfluidic device comprises the flow region and a chamber comprising a proximal opening fluidically connecting the chamber to the flow region, diffusing the reagent from the flow region into the chamber; introducing a micro-object into the flow region of the microfluidic device, and diffusing the reagent from the chamber to the flow region to contact the reagent with the micro-object within the flow region. Other embodiments are described.

Abstract: A display control chip includes a first memory and a computing circuit. The first memory is configured to store a plurality of character images respectively corresponds to a plurality of characters of a character encoding format. The computing circuit is coupled with the first memory, and is configured to receive first update data generated by encoding input data according to the character encoding format, and is configured to use the first update data to update text data in a second memory. When the computing circuit reads the text data in the second memory, the computing circuit is configured to: search among the plurality of character images to find a plurality of target images corresponding to the text data; and output first display data according to the plurality of target images, in which the first display data is for generating a first display picture including the plurality of target images.