Abstract: A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

Abstract: A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.

Abstract: The semiconductor structure includes a plurality of first dies, a plurality of second dies disposed over each of the first dies, and a dielectric material surrounding the plurality of first dies and the plurality of second die. Each of the second dies overlaps a portion of each first die.

Abstract: A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.

Abstract: A semiconductor package includes a die, an insulation layer, a plurality of first electrical conductive vias, a plurality of second electrical conductive vias, a plurality of thermal conductive vias and a connecting pattern. The die includes a plurality of first pads and a plurality of second pads. The insulation layer is disposed on the die and includes a plurality of openings exposing the first pads and the second pads. The first electrical conductive vias and the second electrical conductive vias are disposed in the openings and contact the first pads and the second pads respectively. The thermal conductive vias are disposed on the insulation layer. The connecting pattern is disposed on the insulation layer and connects the first electrical conductive vias and the thermal conductive vias. The thermal conductive vias are connected to the first pads through the connecting pattern and the first electrical conductive vias.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a die stack disposed over the substrate, a heat spreader disposed over the substrate and having a surface facing the substrate, and a thermal interface material (TIM) disposed between the die stack and the heat spreader. A bottommost die of the die stack includes a surface exposed from remaining dies of the die stack from a top view perspective; and the TIM is in contact with the exposed surface of the bottommost die and the surface of the heat spreader, and is in contact with a sidewall of at least one of the plurality of dies of the die stack.

Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.

Abstract: A semiconductor structure includes a plurality of first dies, a second die disposed over each of the first dies, and a dielectric material surrounding the first dies and the second die. The second dies overlaps a portion of each of the first dies. A dimension of the second die is different from a dimension of the first dies.

Abstract: A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

Abstract: A semiconductor device includes a substrate, a first redistribution layer (RDL) over a first side of the substrate, one or more semiconductor dies over and electrically coupled to the first RDL, and an encapsulant over the first RDL and around the one or more semiconductor dies. The semiconductor device also includes connectors attached to a second side of the substrate opposing the first side, the connectors being electrically coupled to the first RDL. The semiconductor device further includes a polymer layer on the second side of the substrate, the connectors protruding from the polymer layer above a first surface of the polymer layer distal the substrate. A first portion of the polymer layer contacting the connectors has a first thickness, and a second portion of the polymer layer between adjacent connectors has a second thickness smaller than the first thickness.

Abstract: An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, a conductive line electrically connecting a first conductive via to a second conductive via, the conductive line including a first segment over the first integrated circuit die and having a first width, and a second segment over the first integrated circuit die having a second width larger than the first width, the second segment extending over a first boundary between the first integrated circuit die and the encapsulant.

Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.

Abstract: An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.

Abstract: An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.

Abstract: In an embodiment, a method for fabricating a FinFET device includes providing a semiconductor substrate, etching the semiconductor substrate to form dummy fins and active fins. The group of dummy fins is etched through a patterned mask layer. An isolation feature is formed on the semiconductor substrate after etching the first group of dummy fins.

Abstract: An integrated circuit package and a method of fabrication of the same are provided. An opening is formed in a substrate. An embedded heat dissipation feature (eHDF) is placed in the opening in the substrate and is attached to the substrate using a high thermal conductivity adhesive. One or more bonded chips are attached to the substrate using a flip-chip method. The eHDF is thermally attached to one or more hot spots of the bonded chips. In some embodiments, the eHDF may comprise multiple physically disconnected portions. In other embodiments, the eHDF may have a perforated structure.

Abstract: A structure includes a bridge die. The bridge die includes a semiconductor substrate; and an interconnect structure over the semiconductor substrate. The interconnect structure includes dielectric layers and conductive lines in the dielectric layers, an encapsulant encapsulating the bridge die therein, and a redistribution structure over the bridge die. The redistribution structure includes redistribution lines therein. A first package component and a second package component are bonded to the redistribution lines. The first package component and the second package component are electrically interconnected through the redistribution lines and the bridge die.