Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating a plurality of first drops of a target material through a first nozzle group selected from a plurality of nozzles to form a first elongated droplet; generating a first laser pulse to convert the first elongated droplet into plasma that generates a first extreme ultraviolet (EUV) radiation; reflecting the first EUV radiation by a collector mirror having an optical axis; generating a plurality of second drops of the target material through a second nozzle group selected from the plurality of nozzles to form a second elongated droplet, the second elongated droplet being oblique with the optical axis of the collector mirror at a different angle than the first elongated droplet.

Abstract: An electric heating material processing device includes a material transporting module, a material feeding controller, a material discharging controller, a gas vent, and an electric heating thermal desorption device. The material transporting module has a material inlet and a material outlet. The material feeding controller is connected to the material inlet, and is configured to control a feeding quantity and a feeding speed of the materials. The material discharging controller is connected to the material outlet, and is configured to control a discharging quantity and a discharging speed of the materials. The gas vent is disposed on an end of the material transporting module. The electric heating thermal desorption device is disposed on an outer surface of the material transporting module, and is configured to perform a thermal desorption process on the materials. The electric heating thermal desorption device includes an electric heating acceptor and plural electric heaters.

Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.

Abstract: An electronic device including a circuit structure, a bonding element and an electronic unit is disclosed. The circuit structure includes a conductive pad, and the conductive pad has an accommodating recess. At least a portion of the bonding element is disposed in the accommodating recess. The electronic unit is electrically connected to the conductive pad through the bonding element. The accommodating recess has a bottom surface and an opening opposite to the bottom surface, and a width of the bottom surface is greater than a width of the opening.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A chip package with a metal shielding layer and a method of manufacturing the same are provided. The chip package includes a chip, a redistribution layer (RDL), and a metal shielding layer. The chip is composed of a first surface and a second surface and cut from a wafer. The RDL is disposed on a surface of at least one chip protective layer of the chip and provided with at least one conductive circuit for electrical connection with the die pad of the chip. The conductive circuit includes at least one pad which is exposed on a surface of the RDL for electrical connection with the outside. The metal shielding layer is covering the second surface of the chip not only for protecting the chip and the conductive circuit from external electromagnetic interference or light interference but also for increasing structural strength of the chip package.

Abstract: The disclosure provides a vinyl-containing aromatic alicyclic copolymer, a resin composition and a product thereof. The resin composition includes the vinyl-containing aromatic alicyclic copolymer, and the product made of the resin composition has a Tg of greater than 200° C., a dielectric constant Dk (10 GHz) of less than 3.0 and a dielectric loss Df (10 GHz) of less than 0.0014.

Abstract: A photographing lens assembly includes at least four lens elements that are, in order from an object side to an image side along an optical path, a first lens element, a second lens element, at least one subsequent lens element and a last lens element that is closest to an image surface. Each of the at least four lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. At least one surface among lens surfaces from the image-side surface of the second lens element to the object-side surface of the last lens element is a metasurface having a subwavelength microstructure.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: The present disclosure is related to a lead frame structure. The lead frame structure includes a bottom board and a blocking wall. The bottom board has a first conductive portion and a second conductive portion. The first conductive portion separates from the second conductive portion. The first and second conductive portions are configured to electrically connect to a light source. The blocking wall is located on the bottom board, and the blocking wall surrounds an opening. The first and the second conductive portions are exposed from the opening. The first and the second conductive portions each have an extending portion. The extending portion extends beyond an external surface of the blocking wall in a horizontal direction.

Abstract: A crystal growth doping apparatus and a crystal growth doping method are provided. The crystal growth doping apparatus includes a crystal growth furnace and a doping device that includes a feeding tube inserted to the furnace body along an oblique insertion direction, and a storage cover and a gate tube that are disposed in the feeding tube. The feeding tube extends from an outer surface thereof to form a placement opening, and the placement opening is recessed from an edge thereof to form an upper recessed portion and a lower recessed portion along the oblique insertion direction. The storage cover includes a storage tank and a handle. When the storage cover is disposed in the gate tube body, the gate tube body is configured to isolate an inner space of the feeding tube from the placement opening.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.

Abstract: A wireless power transmitter circuit includes: a power stage circuit including plural switches coupled to a resonant transmitter circuit, wherein the resonant transmitter circuit includes a transmission coil and a resonant capacitor which are coupled to each other; and a transmission control circuit controlling the power stage circuit to convert an input power to a driving power according to a pulse width modulation (PWM) control signal when a corresponding wireless power receiver circuit is near by the resonant transmitter circuit. The driving power drives the resonant transmitter circuit to generate a wireless transmitting power, which is supplied to the corresponding wireless power receiver circuit. When a variation rate of a driving current of the driving power with respect to time exceeds a variation rate threshold, an operation parameter of the power stage circuit is adjusted to reduce a power level of the wireless transmitting power.

Abstract: A terahertz wave detection chip includes a substrate and at least one detection structure. The detection structure is disposed on a surface of the substrate. The detection structure includes a metamaterial layer and a hydrophilic layer, and the hydrophilic layer is disposed on the metamaterial layer.

Abstract: A wireless power transmitter circuit generates a wireless transmitting power during a power supply procedure, and determines whether there is a corresponding wireless power receiver circuit near by the wireless power transmitter circuit during a groping procedure. The groping procedure includes: step S10, generating a first analog groping transmitting signal; step S20, determining whether there is an electromagnetic inductive object near by the wireless power transmitter circuit according to an electrical characteristic related to the first analog groping transmitting signal, and when yes, proceeding to step S50, otherwise proceeding back to the step S10 after a first predetermined period; step S50: generating a digital groping transmitting signal; and step S60, determining whether there is a corresponding wireless power receiver circuit near by the wireless power transmitter circuit according to a reflect signal.

Abstract: A command script editing method, a command script editor and a graphic user interface are provided. The command script editing method includes the following steps. The command node is edited according to at least one inputting action or at least one image identifying action performed on the operation frame when the command script editor is at an image editing mode. The command node is edited according to a setting content of at least one process action when the command script editor is at a process editing mode.

Abstract: A method of backlight control for a display panel is provided. The display panel is configured to display with a variable refresh rate in a plurality of frame periods each having a fixed period and a variable period. The method includes steps of: generating a first backlight control signal in the fixed period of a frame period; determining whether a liquid crystal (LC) transition time corresponding to the frame period ends before an end time of the variable period of the frame period; generating a second backlight control signal in the variable period of the frame period when the LC transition time ends before the end time of the variable period of the frame period; and generating a compensation backlight control signal in a next frame period according to a backlight duty cycle of the frame period.

Abstract: Described herein are ferroelectric (FE) memory cells that include transistors having gate stacks separate from FE capacitors of these cells. An example memory cell may be implemented as an IC device that includes a support structure (e.g., a substrate) and a transistor provided over the support structure and including a gate stack. The IC device also includes a FE capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator of a FE material between the first capacitor electrode and the second capacitor electrode, where the FE capacitor is separate from the gate stack (i.e., is not integrated within the gate stack and does not have any layers that are part of the gate stack). The IC device further includes an interconnect structure, configured to electrically couple the gate stack and the first capacitor electrode.

Abstract: A script creation method for robot process automation and an electronic device using the same are provided. The electronic device includes an area defining unit, a recording unit, an analysis unit and a creation unit. The area defining unit is configured to obtain a recording area of a screen. The recording unit is configured to record a video according to the recording area. The analysis unit is configured to analyze a plurality of actions according to the video. The creation unit is configured to build a plurality of steps of a script according to the actions.

Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.