Abstract: A method for manufacturing an interconnect structure includes: forming sacrificial portions and electrically conductive portions on a base structure such that the sacrificial portions are disposed to alternate with the electrically conductive portions in a first direction, and such that each of the sacrificial portions and the electrically conductive portions is elongated in a second direction transverse to the first direction; forming blocking portions respectively on the sacrificial portions; forming a sacrificial layer to cover the electrically conductive portions and the blocking portions; forming an electrically conductive via which extends through the sacrificial layer so as to permit the electrically conductive via to be electrically connected to one of the electrically conductive portions; after forming the electrically conductive via, performing a removal process to remove the sacrificial layer, the blocking portions and the sacrificial portions so as to form a cavity; and forming a dielectric portio

Abstract: A bonding tool for bonding semiconductor dies to a semiconductor wafer is provided. The bonding tool includes a wafer chuck, an edge support, a hard plate, and a buffer layer. The wafer chuck carries the semiconductor wafer and the semiconductor dies placed on the semiconductor wafer. The edge support is disposed on the wafer chuck, the semiconductor wafer and the semiconductor dies are laterally surrounded by the edge support, and a top surface of the edge support substantially levels with surfaces of the semiconductor dies. The hard plate is movably disposed over the semiconductor dies, the edge support and the wafer chuck. The buffer layer is disposed on a bottom surface of the hard plate, and the buffer layer is in contact with the top surface of the edge support and the semiconductor dies when the hard plate moves towards the edge support.

Abstract: A semiconductor device includes a substrate, a first conductive feature disposed in a top portion of the substrate, an etch stop layer formed of a metal oxide composite and disposed on a top surface of the substrate, and a second conductive feature disposed on and through the etch stop layer and in contact with the first conductive feature. The metal oxide composite contains a metal element represented by M, and a top surface of the etch stop layer includes an M—O—X group, O representing oxygen, and X representing an element other than hydrogen.

Abstract: An interconnection structure is provided to include a substrate, a first metal trench, a boron nitride dielectric, a second metal trench, and a metal via. The substrate is formed with a first metal trench. The boron nitride dielectric is disposed over the substrate. The second metal trench is formed in the boron nitride dielectric. The metal via is disposed to interconnect the first metal trench and the second metal trench.

Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.

Abstract: A single-arm physiological signal measuring system, including a shell, a flexible electronic assembly, and an air bag, is provided. The flexible electronic assembly is disposed in the shell and surrounds to form a space. The flexible electronic assembly includes a photoplethysmography module, an electrocardiogram module, and a controller. The electrocardiogram module includes first and second electrocardiogram electrodes. The controller is electrically connected to the photoplethysmography module and the electrocardiogram module. The air bag is disposed between the shell and the flexible sensing assembly to push the flexible sensing assembly to change a size of the space. When the air bag is inflated, the photoplethysmography module, the first and second electrocardiogram electrodes are pushed by the air bag to touch an arm, so that the photoplethysmography module measures a blood oxygen saturation, the electrocardiogram module measures an electrocardiogram, and the controller calculates a blood pressure.

Abstract: A mobile device supporting wideband operations includes a first metal mechanism element, a dielectric substrate, a first feeding radiation element, a second feeding radiation element, a ground element, and a second metal mechanism element. The first metal mechanism element includes a main portion and a sidewall portion. The sidewall portion of the first metal mechanism element has a first slot. Both the first feeding radiation element and the second feeding radiation element extend across the first slot of the first metal mechanism element. An antenna structure is formed by the first slot of the first metal mechanism element, the dielectric substrate, the first feeding radiation element, the second feeding radiation element, and the ground element. The second metal mechanism element is disposed opposite to the main portion of the first metal mechanism element. The second metal mechanism element has a second slot.

Abstract: A polymer composite for preparing a low dielectric resin composition having a dielectric loss tangent (Df) that is less than or equal to 0.00200 is provided. The polymer composite includes a first styrene-based copolymer having a weight average molecular weight that is lower than 20,000 g/mol and a second styrene-based copolymer having a weight average molecular weight that is higher than 20,000 g/mol, wherein the weight ratio of the first styrene-based copolymer to the second styrene-based copolymer is from 5/95 to 95/5.

Abstract: A wound-size measuring method for use in a portable electronic device is provided. The method includes the following steps: obtaining an input image via a camera device of the portable electronic device; using a CNN (convolutional neural network) model to recognize the input image, and selecting a part of the input image with the highest probability of containing a wound as an output wound image; and calculating an actual height and an actual width of the output wound image according to a lens-focal-length parameter reported by an operating system running on the portable electronic device, a plurality of reference calibration parameters corresponding to a pitch angle of the portable electronic device, and a pixel-height ratio and a pixel-width ratio of the output wound image.

Abstract: An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a first dielectric layer, a first conductive feature, a second dielectric layer, and a barrier layer. The first conductive feature is disposed on the first dielectric layer, the second dielectric layer is disposed on the first dielectric layer and surrounds the sidewalls of the first conductive feature, the barrier layer is disposed between the first dielectric layer and the second dielectric layer and between the sidewalls of the first conductive feature and the second dielectric layer.

Abstract: A method for determining the reference internal impedance of a battery includes the following steps: (a) during a sensing period, sensing a battery voltage, a battery current flowing through the battery, and a battery temperature to obtain a sensing result, thereby determining a depth of discharge (DOD); (b) in step (a), comparing the sensing result with a predetermined threshold to determine whether to accept the sensing result; (c) when the sensing result is accepted, calculating a corresponding battery internal impedance based on the sensing result and the depth of discharge; (d) performing regression analysis on the battery internal impedance and a plurality of previous battery internal impedances to obtain a moving average battery internal impedance corresponding to the depth of discharge; and (e) obtaining a corresponding reference battery internal impedance based on the moving average battery internal impedance.

Abstract: An infrared sensor uses an infrared lens with infrared filtering and focusing functions. Thus, an infrared filter can be omitted to reduce the costs and volume. In addition, a getter on the inside of a metal cover of the infrared sensor can be activated when the metal cover is soldered to the substrate of the infrared sensor. Therefore, the packaging process of the infrared sensor can be simplified.

Abstract: Provided is an isolated nucleic acid molecule comprising a NKp30 transmembrane domain, and a chimeric antigen receptor comprising the same. The isolated nucleic acid molecule comprising a NKp30 transmembrane domain comprises nucleic acid sequences encoding (a) an extracellular antigen binding domain, comprising a heavy chain variable region; (b) a hinge domain; (c) a NKp30 transmembrane domain; and (d) a NKp30 cytoplasmic domain. By introducing nucleic acid sequences of the NKp30 transmembrane domain and the NKp30 cytoplasmic domain in combination with the extracellular antigen binding domain into a T cell, the resulting CAR-T cell is a multi-chain CAR-T cell with a NKp30 receptor complex. Consequently, the resulting CAR-T cell forms stable immune synapses with cancer cells and exhibits excellent cytotoxicity against cancer cells.

Abstract: A display apparatus is provided. The display apparatus includes a display module and multiple light-emitting driving circuits. Each of the light-emitting driving circuits includes a timing control circuit and a driving circuit. The timing control circuit receives multiple clock signals and a previous light-emitting timing signal to provide a light-emitting timing signal and an internal voltage. The driving circuit receives a first phase signal among multiple phase signals and the internal voltage to provide a light-emitting driving signal to the display module based on the first phase signal and the internal voltage. The phase signals all present disabled levels during a vertical blank period.

Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

Abstract: An optical device includes a range finding module. The range finding module includes a first light condenser unit, a light emitting unit and a light receiving unit. The first light condenser unit defines an optical axis and a hole disposed along the optical axis. The first light condenser unit, the light emitting unit and the light receiving unit are sequentially arranged along the optical axis. The light is emitted by the light emitting unit, passes through the hole, reaches an object, is reflected by the object, is converged by the first light condenser unit and is received by the light receiving unit to generate an electrical signal.

Abstract: An out-of-service recovery search method includes establishing a frequency list including at least one searchable frequency, searching a suitable cell of a network according to the frequency list when the user terminal is in an out-of-service state, determining at least one first skip condition of the user terminal, performing a full-band power scan mechanism for scanning received signal strength indication (RSSIs) of user terminal supported frequency bands when the at least one first skip condition of the user terminal is absent and no suitable cell of the network is searched within the searchable frequency of the frequency list, skipping the full-band power scan mechanism when the at least one first skip condition of the user terminal is present and no suitable cell of the network is searched within the searchable frequency, and performing an RSSI sniffer for scanning a signal power of each frequency of the searchable frequency.

Abstract: Contact structures and methods of forming the same are provided. A method according to the present disclosure includes receiving a workpiece including a conductive feature embedded in a first dielectric layer, treating the workpiece with a nitrogen-containing plasma, after the treating, depositing a first etch stop layer (ESL) over the workpiece, depositing a second ESL over the first ESL, depositing a second dielectric layer over the second ESL, forming an opening through the second dielectric layer, the second ESL and the first ESL to expose the conductive feature, and forming a contact via in the opening. The first ESL includes aluminum nitride or silicon carbonitride and the second ESL includes aluminum oxide or silicon oxycarbide.

Abstract: A modified polyethylene terephthalate copolyester, including three fragments shown as [Fragment 1], [Fragment 2], and [Fragment 3] in the specification, is provided.