Abstract: A mobile device supporting wideband operations includes a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a fifth radiation element, a sixth radiation element, and a seventh radiation element. The first radiation element has a feeding point. The second radiation element and the third radiation element are coupled to the first radiation element. The first radiation element is coupled through the fourth radiation element to a ground voltage. The fifth radiation element is coupled to the fourth radiation element. The sixth radiation element is coupled to the ground voltage. The sixth radiation element is adjacent to the first radiation element and the third radiation element. The seventh radiation element is coupled to the sixth radiation element. The seventh radiation element extends away from the third radiation element.

Abstract: A mobile device supporting wideband operations includes a first metal mechanism element, a dielectric substrate, a feeding radiation element, a ground element, a second metal mechanism element, and a nonconductive antenna window. The first metal mechanism element includes a main portion and a sidewall portion. The sidewall portion has a slot. The dielectric substrate is adjacent to the sidewall portion of the first metal mechanism element. The feeding radiation element extends across the slot of the first metal mechanism element. An antenna structure is formed by the slot of the first metal mechanism element, the dielectric substrate, the feeding radiation element, and the ground element. The second metal mechanism element is disposed opposite from the main portion of the first metal mechanism element. The nonconductive antenna window is connected between the sidewall portion of the first metal mechanism element and the second metal mechanism element.

Abstract: Embodiments of the disclosure provide a method and device for providing a wire breakage warning. The method includes: obtaining a plurality of process values when a crystal ingot cutting machine uses a cutting wire to cut a crystal ingot; dividing the process values into N groups, and determining a statistical property of each of the groups; identifying outlier values in the process values based on the statistical property of each of the groups, or determining a statistical property variation corresponding to each of the groups based on the statistical property of each of the groups; and in response to determining that the outlier values in the process values meet a first warning condition, or the statistical property variation corresponding to each of the groups meets a second warning condition, providing a wire breakage warning associated with the cutting wire.

Abstract: A heat exchange tube is used to solve the problem of insufficient heat exchange efficiency of the conventional heat exchange tube. The heat exchange tube includes a tube, a first porous layer, and a second porous layer. The tube includes an inner wall. The first porous layer includes a plurality of holes. The first porous layer is disposed on the inner wall of the tube. The second porous layer includes a plurality of holes. The second porous layer is disposed on an inner surface of the first porous layer. An average diameter of the plurality of holes of the second porous layer is greater than an average diameter of the plurality of holes of the first porous layer. A method for manufacturing a heat exchange tube is also disclosed.

Abstract: A manufacturing method of a semiconductor package includes the following steps. A semiconductor device is picked up from a carrier by a pick and place device, wherein the pick and place device includes a flexible head having a bonding portion configured to be in contact with the semiconductor device, a neck portion connecting the bonding portion, wherein a minimum width of the neck portion is substantially smaller than a maximum width of the bonding portion. The semiconductor device is placed and pressed onto a substrate by the pick and place device. An encapsulating material is formed over the substrate to laterally encapsulating the semiconductor device. A redistribution structure is formed over the semiconductor device and the encapsulating material. The substrate is removed.

Abstract: A method includes forming a plurality of nanostructures over a substrate; etching the plurality of nanostructures to form recesses; forming source/drain regions in the recesses; removing first nanostructures of the plurality of nanostructures leaving second nanostructures of the plurality of nanostructures; depositing a gate dielectric over and around the second nanostructures; depositing a protective material over the gate dielectric; performing a fluorine treatment on the protective material; removing the protective material; depositing a first conductive material over the gate dielectric; and depositing a second conductive material over the first conductive

Abstract: The present invention relates to a foamable composition used to prepare foamed thermoplastic polyurethane and a microwave molded body thereof. The foamable composition includes unfoamed thermoplastic polyurethane particles, a thickener or a bridging agent, and a foaming agent, wherein the unfoamed thermoplastic polyurethane particles have a viscosity of 1,000 poise to 9,000 poise measured at 170° C. according to JISK 7311 test method.

Abstract: Provided is a lentivirus packaging system, which comprises: a transfer plasmid comprising a nucleotide sequence of TAR-reserved-chimeric 5? long terminal repeat (LTR); at least one packaging plasmid comprising a nucleotide sequence encoding TAR RNA binding protein, a nucleotide sequence of rev gene, a nucleotide sequence of gag gene, and a nucleotide sequence of pol gene; and an envelope plasmid. Due to the expression of gene of TAR RNA binding protein by the packaging plasmids, the produced lentivirus has higher virus titer and can improve the transduction rate and the gene delivery efficiency during cell transduction. The present invention further provides a method of improving lentivirus production in a host cell, which comprises using the lentivirus packaging system to transfect the host cell. The present invention further provides a cell transduced by the lentivirus and a method of using the cell for treating cancer.

Abstract: A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes exposing lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers within a source/drain region of the semiconductor device. In some examples, the method further includes etching the exposed lateral surfaces of the plurality of dummy layers to form recesses and forming an inner spacer within each of the recesses, where the inner spacer includes a sidewall profile having a convex shape. In some cases, and after forming the inner spacer, the method further includes performing a sheet trim process to tune the sidewall profile of the inner spacer such that the convex shape of the sidewall profile becomes a substantially vertical sidewall surface after the sheet trim process.

Abstract: An image sensor may include a polydimethylsiloxane (PDMS) layer that is subwavelength, hydrophobic, and/or antireflective. The PDMS layer may be fabricated to include a surface having a plurality of nanostructures (e.g., an array of convex protuberances and/or an array of concave recesses). The nanostructures may be formed through the use of a porous anodic aluminum oxide (AAO) template that uses a plurality of nanopores to form the array of convex protuberances and/or the array of concave recesses. The nanostructures may each have a respective width that is less than the wavelength of incident light that is to be collected by the image sensor to increase light absorption by increasing the angle of incidence for which the image sensor is capable of collecting incident light. This may increase the quantum efficiency of the image sensor and may increase the sensitivity of the image sensor.

Abstract: A mobile device supporting wideband operations includes a first radiation element, a second radiation element, a third radiation element, and a dielectric substrate. The first radiation element has a feeding point. The second radiation element is coupled to the ground voltage. The first radiation element is at least partially surrounded by the second radiation element. The feeding point is coupled through the third radiation element to the ground voltage. The first radiation element, the second radiation element, and the third radiation element are disposed on the dielectric substrate. An antenna structure is formed by the first radiation element, the second radiation element, and the third radiation element.

Abstract: A semiconductor package includes a first heat dissipation plate, a second heat dissipation plate, a plurality of heat generating assemblies, and a plurality of fixture components. The first heat dissipation plate has a first upper surface and a first lower surface. The first heat dissipation plate includes first through holes extended from the first upper surface to the first lower surface. The second heat dissipation plate has a second upper surface and a second lower surface. The second heat dissipation plate includes second through holes extended from the second upper surface to the second lower surface. The heat generating assemblies are disposed between the first heat dissipation plate and the second heat dissipation plate. The fixture components include fix screws and nuts. The fix screws penetrate through the first heat dissipation plate and the second heat dissipation plate along the first through holes and the second through holes.

Abstract: An integrated circuit includes a flip-flop circuit and a gating circuit. The flip-flop circuit is arranged to receive an input data for generating a master signal during a writing mode according to a first clock signal and a second clock signal, and to output an output data according to the first clock signal and the second clock signal during a storing mode. The gating circuit is arranged for generating the first clock signal and the second clock signal according to the master signal and an input clock signal. When the input clock signal is at a signal level, the first clock signal and the second clock signal are at different logic levels. When the input clock signal is at another signal level, the first clock signal and the second clock signal are at a same logic level determined according to a signal level of the master signal.

Abstract: A semiconductor package device is provided. The semiconductor package device includes a chip and a redistribution layer disposed on the chip and electrically connected to the chip. The redistribution layer includes a plurality of first metal lines and a plurality of second metal lines, wherein at least one of the second metal lines is disposed between two adjacent first metal lines. The included angle between the at least one of the second metal lines and the two adjacent first metal lines is greater than or equal to 0 degrees and less than or equal to 10 degrees. The first width of one of the two adjacent first metal lines is greater than the second width of the at least one of the second metal lines.

Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.

Abstract: A die bonding device is provided to pick up a die and place the die on a carrier. The die bonding device includes a pick-and-placer and a vacuum generator. The pick-and-placer includes an adsorption surface, a first channel and a second channel, and the first channel and the second channel are not connected to each other. The vacuum generator includes a first vacuum pump and a second vacuum pump, the first vacuum pump is connected to the first channel via a pipeline, the second vacuum pump is connected to the second channel via another pipeline, the first vacuum pump and the second vacuum pump make the pick-and-placer adsorb the die to the adsorption surface during a vacuum holding period, and the first vacuum pump and the second vacuum pump respectively make the pick-and-placer release the die to the carrier sequentially in a vacuum release period.

Abstract: A mobile device supporting wideband operations includes a feeding radiation element, a first radiation element, a second radiation element, a third radiation element, a shorting radiation element, a fourth radiation element, and a fifth radiation element. The first radiation element is coupled to the feeding radiation element. The second radiation element is adjacent to the first radiation element. The second radiation element and the third radiation element are coupled through the shorting radiation element to a ground voltage. The fourth radiation element is coupled to the feeding point. The fourth radiation element is adjacent to the second radiation element. The fifth radiation element is coupled to the feeding point. An antenna structure is formed by the feeding radiation element, the first radiation element, the second radiation element, the third radiation element, the shorting radiation element, the fourth radiation element, and the fifth radiation element.

Abstract: A mobile device supporting wideband operations includes a feeding radiation element, a first radiation element, a second radiation element, a shorting radiation element, a third radiation element, and a fourth radiation element. The feeding radiation element has a feeding point. The first radiation element is coupled to the feeding radiation element. The second radiation element is coupled to the feeding radiation element. The second radiation element and the first radiation element substantially extend in opposite directions. The second radiation element is coupled through the shorting radiation element to a ground voltage. The third radiation element is coupled to the ground voltage. The fourth radiation element is coupled to the feeding radiation element. An antenna structure is formed by the feeding radiation element, the first radiation element, the second radiation element, the shorting radiation element, the third radiation element, and the fourth radiation element.

Abstract: A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.