Abstract: Methods and apparatus for metal semiconductor wafer bonding for high-Q devices are provided. An exemplary capacitor includes a first plate formed on a glass substrate, a second plate, and a dielectric layer. No organic bonding agent is used between the first plate and the glass substrate, and the dielectric layer can be an intrinsic semiconductor. A extrinsic semiconductor layer that is heavily doped contacts the dielectric layer. The dielectric and extrinsic semiconductor layers are sandwiched between the first and second plates. An intermetallic layer is formed between the first plate and the dielectric layer. The intermetallic layer is thermo compression bonded to the first plate and the dielectric layer. The capacitor can be coupled in a circuit as a high-Q capacitor and/or a varactor, and can be integrated with a mobile device.

Abstract: This disclosure provides implementations of inductors, transformers, and related processes. In one aspect, a device includes a substrate having first and second surfaces. A first inducting arrangement includes a first set of vias, a second set of vias, a first set of traces arranged over the first surface connecting the first and second vias, and a second set of traces arranged over the second surface connecting the first and second vias. A second inducting arrangement is inductively-coupled and interleaved with the first inducting arrangement and includes a third set of vias, a fourth set of vias, a third set of traces arranged over the first surface connecting the third and fourth vias, and a fourth set of traces arranged over the second surface connecting the third and fourth vias. One or more sets of dielectric layers insulate portions of the traces from one another.

Abstract: A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further includes a transformer disposed above the dielectric substrate and coupled to the replica circuit. The transformer is configured facilitate an impedance match between the replica circuit and an antenna.

Abstract: This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a resonator structure includes a first conductive layer of electrodes and a second conductive layer of electrodes. A piezoelectric layer including a piezoelectric material is disposed between the first conductive layer and the second conductive layer. One or more trenches can be formed in the piezoelectric layer on one or both sides in space regions between the electrodes. In some implementations, a process for forming the resonator structure includes removing an exposed portion of the piezoelectric layer to define a trench, for instance, by partial etching or performing an isotropic release etch using a XeF2 gas or SF6 plasma. In some other implementations, a portion of a sacrificial layer is removed to define a trench in the piezoelectric layer.

Abstract: This disclosure provides implementations of inductors, transformers, and related processes. In one aspect, a device includes a substrate having first and second surfaces. A first inducting arrangement includes a first set of vias, a second set of vias, a first set of traces arranged over the first surface connecting the first and second vias, and a second set of traces arranged over the second surface connecting the first and second vias. A second inducting arrangement is inductively-coupled and interleaved with the first inducting arrangement and includes a third set of vias, a fourth set of vias, a third set of traces arranged over the first surface connecting the third and fourth vias, and a fourth set of traces arranged over the second surface connecting the third and fourth vias. One or more sets of dielectric layers insulate portions of the traces from one another.

Abstract: Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.

Abstract: This disclosure provides systems, methods and apparatus related to acoustic resonators that include composite transduction layers for enabling selective tuning of one or more acoustic or electromechanical properties. In one aspect, a resonator structure includes one or more first electrodes, one or more second electrodes, and a transduction layer arranged between the first and second electrodes. The transduction layer includes a plurality of constituent layers. In some implementations, the constituent layers include one or more first piezoelectric layers and one or more second piezoelectric layers. The transduction layer is configured to, responsive to signals provided to the first and second electrodes, provide at least a first mode of vibration of the transduction layer with a displacement component along the z axis and at least a second mode of vibration of the transduction layer with a displacement component along the plane of the x axis and they axis.

Abstract: This disclosure provides systems, apparatus and techniques by which electromechanical resonators are implemented. In one aspect, by mechanically loading the resonator body in specific ways, multiple resonance modes are created within the resonator body resulting in wider bandwidths.

Abstract: A multi-mode bandpass filter is described. The bandpass filter includes a first multi-directional vibrating microelectromechanical systems resonator. The bandpass filter also includes a second multi-directional vibrating microelectromechanical systems resonator. The first multi-directional vibrating microelectromechanical systems resonator is in a parallel configuration. The second multi-directional vibrating microelectromechanical systems resonator is in a series configuration.

Abstract: This disclosure provides implementations of filters and filter topologies, circuits, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes one or more LC resonant circuit stages. In some implementations, each LC stage includes an inductor and a capacitor. Each LC stage also has a corresponding resonant frequency. The one or more LC stages are arranged to produce an unmodified passband over a range of frequencies having a corresponding bandwidth. One or more microelectromechanical systems (MEMS) resonators are arranged with the one or more LC stages. The one or more MEMS resonators are arranged with the one or more LC stages so as to modify characteristics of the unmodified passband such that the hybrid filter produces a modified passband having a modified bandwidth and one or more other modified band characteristics.

Abstract: This disclosure provides systems, methods and apparatus for glass via bars that can be used in compact three-dimensional packages, including embedded wafer level packages. The glass via bars can provide high density electrical interconnections in a package. In some implementations, the glass via bars can include integrated passive components. Methods of fabricating glass via bars are provided. In some implementations, the methods can include patterning and etching photo-patternable glass substrates. Packaging methods employing glass via bars are also provided.

Abstract: This disclosure provides systems, methods and apparatus for vias in an integrated circuit structure such as a passive device. In one aspect, an integrated passive device includes a first conductive trace and a second conductive trace over the first conductive trace with an interlayer dielectric between a portion of the first conductive trace and the second conductive trace. One or more vias are provided within the interlayer dielectric to provide electrical connection between the first conductive trace and the second conductive trace. A width of the vias is greater than a width of at least one of the conductive traces.

Abstract: This disclosure provides implementations of inductors, transformers, and related processes. In one aspect, a device includes a substrate having first and second surfaces. A first inducting arrangement includes a first set of vias, a second set of vias, a first set of traces arranged over the first surface connecting the first and second vias, and a second set of traces arranged over the second surface connecting the first and second vias. A second inducting arrangement is inductively-coupled and interleaved with the first inducting arrangement and includes a third set of vias, a fourth set of vias, a third set of traces arranged over the first surface connecting the third and fourth vias, and a fourth set of traces arranged over the second surface connecting the third and fourth vias. One or more sets of dielectric layers insulate portions of the traces from one another.

Abstract: This disclosure provides systems, methods, and apparatus related to inductors. In one aspect, a planar inductor may include a substrate with a spacer in the shape of a planar spiral coil on a surface of the substrate. Disposed on the spacer may be a line of metal formed as a planar inductor in the shape of the planar spiral coil. The spacer may be between the line of metal and the surface of the substrate. The spacer may elevate the line of metal above the surface of the substrate.

Abstract: A diversity receiver switch includes at least one second stage switch configured to communicate with a transceiver. The diversity receiver switch may also include at least one first stage switch coupled between a diversity receiver antenna and the second stage switch(es). The first stage switch(es) may be configured to handle a different amount of power than the second stage switch(es). The diversity receiver switch may include a bank of second stage switches configured to communicate with a transceiver. A first stage switch may be configured to handle more power than each switch in the bank of second stage switches. Alternatively, the diversity receiver switch include a bank of first stage switches coupled between the diversity receiver antenna and a second stage switch. The second stage switch may be configured to handle more power than each of the first stage switches.

Abstract: This disclosure provides implementations of electromechanical systems (EMS) piezoelectric resonator structures, transformers, devices, apparatus, systems, and related processes. In one aspect, a piezoelectric resonator structure includes a first conductive electrode layer, a second conductive electrode layer, and a piezoelectric layer arranged between the first and second conductive layers. In some implementations, the surface of the piezoelectric layer adjacent to the first conductive layer is separated from the first conductive layer by a first gap, and the surface of the piezoelectric layer adjacent to the second conductive layer is separated from the second conductive layer by a second gap. In some implementations, the resonator structure further includes an encapsulation layer arranged over the second conductive layer and providing physical support to the second conductive layer.

Abstract: An impedance matching circuit is disclosed. The impedance matching circuit includes two or more mutually coupled inductors. A total self inductance of the impedance matching circuit is less than a corresponding impedance matching circuit that includes inductors that are not mutually coupled. The two or more mutually coupled inductors may have known current ratios that match current ratios in the corresponding impedance matching circuit.

Abstract: Three-dimensional (3D) Radio Frequency (RF) inductor-capacitor (LC) band pass filters having through-glass-vias (TGVs). One such L-C filter circuit includes a glass substrate, a first portion of a first inductor formed on a first surface of the glass substrate, a second portion of the first inductor formed on a second surface of the glass substrate, and a first set of TGVs configured to connect the first and second portions of the first inductor. Additionally the L-C filter circuit can include a second inductor similar to the first inductor, and a metal-insulator-metal (MIM) capacitor formed between the first and second inductor, such that the first and second inductor are coupled through the MIM capacitor.

Abstract: Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.

Abstract: This disclosure provides implementations of electromechanical systems piezoelectric resonator transformers, devices, apparatus, systems, and related processes. In one aspect, a transformer includes a piezoelectric layer; a first conductive layer arranged over a first surface of the piezoelectric layer including a first set of electrodes and a second set of electrodes interdigitated with the first set. The transformer includes a second conductive layer arranged over a second surface including at least a third set of electrodes. In some implementations, the transformer includes a first port capable of receiving an input signal and to which the first set of electrodes are coupled, and a second port capable of being coupled to a load and of outputting an output signal, the second set of electrodes being coupled to the second port. Generally, a ratio of the number of electrodes of the second set to the first set characterizes a transformation ratio.