Abstract: This disclosure provides implementations of electromechanical systems combined resonator and passive circuit components. In one aspect, passband flattened filter apparatus includes a resonator structure and input and output passband flattening components. The resonator structure has a first input, a second input coupled to a ground terminal, a first output, and a second output coupled to the ground terminal. The input passband flattening component includes a first inductor having an output coupled to the first input of the resonator structure, and a second inductor having an input coupled to the first input of the resonator structure and an output coupled to the ground terminal. The output passband flattening component includes a first inductor having an input coupled to the first output of the resonator structure, and a second inductor having an input coupled to the first output of the resonator structure and an output coupled to the ground terminal.

Abstract: Systems and method for wideband filter designs comprising two-port piezoelectric resonators electrically coupled in parallel. A resonating circuit comprises a first piezoelectric resonator formed of a first configuration, and a second piezoelectric resonator formed of a second configuration such that outputs of the first and second piezoelectric resonators have a 180-degree phase difference for a same input. The first piezoelectric resonator and the second piezoelectric resonator are coupled electrically in parallel. The first and second piezoelectric resonators have different resonating frequencies respectively controlled by lateral dimensions of the piezoelectric resonators.

Abstract: A chipset includes a sheet of glass, quartz or sapphire and a first wafer having at least one first circuit layer on a first side of a first substrate layer. The first wafer is connected to the sheet such that the at least one first circuit layer is located between the first substrate layer and the sheet. A second wafer having at least one second circuit layer on a first side of a second substrate layer is connected to the first substrate layer such that the at least one second circuit layer is located between the second substrate layer and the first substrate layer. Also a method of forming a chipset.

Abstract: A multiple frequency reconfigurable voltage controlled oscillator (VCO) (136) includes a variable capacitance device (112), an inductor (116) coupled in parallel with the variable capacitance device (112), and at least two circuit paths (118, 120, 122) coupled in parallel with the variable capacitance device (112) and the inductor (116). The circuit paths (118, 120, 122) each include a piezoelectric laterally vibrating resonator (126, 130, 134) and a switch (124, 128, 132) for selectably coupling each piezoelectric laterally vibrating resonator (126, 130, 134) in parallel with the inductor (116) and variable capacitance device (112).

Abstract: This disclosure provides implementations of electromechanical systems combined resonator and passive circuit component structures, devices, apparatus, systems, and related processes. In one aspect, the device includes a piezoelectric resonator structure formed over an insulating substrate. A portion of the piezoelectric resonator structure is spaced apart from the substrate by a first gap. A passive circuit component structure such as an inductor or a capacitor is formed over the insulating substrate. A portion of the passive circuit component structure is spaced apart from the substrate by a second gap. The first gap and the second gap are defined by removal of a sacrificial (SAC) layer.

Abstract: Methods and apparatus for metal semiconductor wafer bonding for high-Q devices are provided. An exemplary capacitor includes a first plate formed on a glass substrate, a second plate, and a dielectric layer. No organic bonding agent is used between the first plate and the glass substrate, and the dielectric layer can be an intrinsic semiconductor. A extrinsic semiconductor layer that is heavily doped contacts the dielectric layer. The dielectric and extrinsic semiconductor layers are sandwiched between the first and second plates. An intermetallic layer is formed between the first plate and the dielectric layer. The intermetallic layer is thermo compression bonded to the first plate and the dielectric layer. The capacitor can be coupled in a circuit as a high-Q capacitor and/or a varactor, and can be integrated with a mobile device.

Abstract: Electromechanical systems dilation mode resonator (DMR) structures are disclosed. The DMR includes a first electrode layer, a second electrode layer, and a piezoelectric layer formed of a piezoelectric material. The piezoelectric layer has dimensions including a lateral distance (D), in a plane of an X axis and a Y axis perpendicular to the X axis, and a thickness (T), along a Z axis perpendicular to the X axis and the Y axis. A numerical ratio of the thickness and the lateral distance, T/D, is configured to provide a mode of vibration of the piezoelectric layer with displacement along the Z axis and along the plane of the X axis and the Y axis responsive to a signal provided to one or more of the electrodes. Ladder filter circuits can be constructed with DMRs as series and/or shunt elements, and the resonators can have spiral configurations.

Abstract: Electromechanical systems dilation mode resonator (DMR) structures are disclosed. The DMR includes a first electrode layer, a second electrode layer, and a piezoelectric layer formed of a piezoelectric material. The piezoelectric layer has dimensions including a lateral distance (D), in a plane of an X axis and a Y axis perpendicular to the X axis, and a thickness (T), along a Z axis perpendicular to the X axis and the Y axis. A numerical ratio of the thickness and the lateral distance, T/D, is configured to provide a mode of vibration of the piezoelectric layer with displacement along the Z axis and along the plane of the X axis and the Y axis responsive to a signal provided to one or more of the electrodes. Ladder filter circuits can be constructed with DMRs as series and/or shunt elements, and the resonators can have spiral configurations.

Abstract: A method and apparatus for a piezoelectric resonator having combined thickness and width vibrational modes are disclosed. A piezoelectric resonator may include a piezoelectric substrate and a first electrode coupled to a first surface of the piezoelectric substrate. The piezoelectric resonator may further include a second electrode coupled to a second surface of the piezoelectric substrate, where the first surface and the second surface are substantially parallel and define a thickness dimension of the piezoelectric substrate. Furthermore, the thickness dimension and the width dimension of the piezoelectric substrate are configured to produce a resonance from a coherent combination of a thickness vibrational mode and a width vibrational mode when an excitation signal is applied to the electrodes.

Abstract: A through via inductor or transformer in a high-resistance substrate in an electronic package. In one embodiment, the package comprises a target inductor which includes a through-via formed in the substrate through which a signal passes and a tuner inductor which includes a through-via formed in the substrate such that the through-via has an independent signal passing therethrough. The direction of the signal passing through the tuner inductor can be independently controlled to adjust the total inductance of the target inductor. In another embodiment, a transformer can comprise a primary loop and a secondary loop, each of which includes a plurality of through-vias that are coupled to a plurality of conductive traces. The primary loop forms a first continuous conductive path and the secondary loop forms a second continuous conductive path. A signal passing through the primary loop can induce a signal in the secondary loop such that the induced signal is dependent on the transformer ratio.

Abstract: This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a resonator structure includes a first conductive layer of electrodes and a second conductive layer of electrodes. A piezoelectric layer including a piezoelectric material is disposed between the first conductive layer and the second conductive layer. One or more trenches can be formed in the piezoelectric layer on one or both sides in space regions between the electrodes. In some implementations, a process for forming the resonator structure includes removing an exposed portion of the piezoelectric layer to define a trench, for instance, by partial etching or performing an isotropic release etch using a XeF2 gas or SF6 plasma. In some other implementations, a portion of a sacrificial layer is removed to define a trench in the piezoelectric layer.

Abstract: This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. A resonator structure generally includes a first conductive layer with an input electrode, an output electrode, and a ground electrode. The ground electrode is disposed between the input electrode and the output electrode. In some implementations, the second conductive layer includes an input electrode, an output electrode, and a ground electrode. In some other implementations, a second conductive layer includes a pair of ground electrodes and a signal electrode in the form of an input or output electrode disposed between the ground electrodes. A piezoelectric layer is disposed between the first conductive layer and the second conductive layer.

Abstract: This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, resonator apparatus includes a first conductive layer including a first electrode and a second electrode. The first electrode is coupled to receive a first input signal, and the second electrode is coupled to provide a first output signal. A piezoelectric layer includes a piezoelectric material. The piezoelectric layer has a first side and a second side opposite the first side. The first side is proximate the first conductive layer, and the second side is electrically isolated from ground. In some examples, the second side of the piezoelectric layer can be exposed and/or electrically de-coupled from one or more components.

Abstract: Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.

Abstract: A through via inductor or transformer in a high-resistance substrate in an electronic package. The package may comprise a target inductor which includes a through-via formed in the substrate through which a signal passes and a tuner inductor which includes a through-via formed in the substrate such that the through-via has an independent signal passing therethrough. The direction of the signal passing through the tuner inductor can be independently controlled to adjust the total inductance of the target inductor. A transformer can comprise a primary loop and a secondary loop, each of which includes through-vias coupled to conductive traces. The primary loop forms a first continuous conductive path and the secondary loop forms a second continuous conductive path. A signal passing through the primary loop can induce a signal in the secondary loop such that the induced signal is dependent on the transformer ratio.

Abstract: This disclosure provides systems, apparatus and techniques by which electromechanical resonators are implemented. In one aspect, by mechanically loading the resonator body in specific ways, multiple resonance modes are created within the resonator body resulting in wider bandwidths.

Abstract: This disclosure provides systems, methods and apparatus for combining devices deposited on a first substrate, with integrated circuits formed on a second substrate such as a semiconducting substrate or a glass substrate. The first substrate may be a glass substrate. The first substrate may include conductive vias. A power combiner circuit may be deposited on a first side of the first substrate. The power combiner circuit may include passive devices deposited on at least the first side of the first substrate. The integrated circuit may include a power amplifier circuit disposed on and configured for electrical connection with the power combiner circuit, to form a power amplification system. The conductive vias may include thermal vias configured for conducting heat from the power amplification system and/or interconnect vias configured for electrical connection between the power amplification system and a conductor on a second side of the first substrate.

Abstract: This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a contour mode resonator device includes a first conductive layer with a plurality of first layer electrodes including a first electrode at which a first input signal can be provided and a second electrode at which a first output signal can be provided. A second conductive layer includes a plurality of second layer electrodes including a first electrode proximate the first electrode of the first conductive layer and a second electrode proximate the second electrode of the first conductive layer. A second signal can be provided at the first electrode or the second electrode of the second conductive layer to cooperate with the first input signal or the first output signal to define a differential signal. A piezoelectric layer is disposed between the first conductive layer and the second conductive layer.

Abstract: An inductor or transformer for use in integrated circuit devices that includes a high-resistivity substrate. The inductor includes a plurality of conductive traces around the substrate forming a continuous conductive path from a first to a second port. The conductive path can be solenoid-shaped. Some of the conductive traces can be formed during back-end-of-line processing or backside plating of an integrated circuit die. The transformer includes a first inductor with input and output ports, and a first continuous conductive path therebetween; and a second inductor with input and output ports, and a second continuous conductive path therebetween. The second inductor is independent of and electromagnetically coupled to the first inductor. The first and second conductive paths can be solenoid-shaped. The first conductive path can be interleaved with the second conductive path.

Abstract: A through via inductor or transformer in a high-resistance substrate in an electronic package. In one embodiment, the package comprises a target inductor which includes a through-via formed in the substrate through which a signal passes and a tuner inductor which includes a through-via formed in the substrate such that the through-via has an independent signal passing therethrough. The direction of the signal passing through the tuner inductor can be independently controlled to adjust the total inductance of the target inductor. In another embodiment, a transformer can comprise a primary loop and a secondary loop, each of which includes a plurality of through-vias that are coupled to a plurality of conductive traces. The primary loop forms a first continuous conductive path and the secondary loop forms a second continuous conductive path. A signal passing through the primary loop can induce a signal in the secondary loop such that the induced signal is dependent on the transformer ratio.