Abstract: Provided is a method for manufacturing a vertical channel thin film transistor. The method for manufacturing the vertical channel thin film transistor includes forming a bottom source drain electrode, forming a first interlayer insulating layer, forming first middle source drain electrodes, forming a second interlayer insulating layer, forming a top source drain electrode, forming an opening through which portions of the bottom source drain electrode, the first middle source drain electrodes, and the top source drain electrode are exposed, forming channel layers, forming a gate insulating layer on the channel layers, the bottom source drain electrode, the first middle source drain electrodes, and the top source drain electrode, and forming gate electrodes on the gate insulating layer.

Abstract: A vertical channel thin film transistor includes substrate, lower source/drain electrode, spacer layer, upper source/drain electrode covering portion of upper surface of the spacer layer, interlayer insulating pattern covering portion of upper surface of the upper source/drain electrode and upper surface of the spacer layer exposed by the upper source/drain electrode, contact hole disposed on the lower source/drain electrode and passing through the interlayer insulating pattern, the upper source/drain electrode, and the spacer layer, active pattern covering inner wall and bottom surface of the contact hole and extending over upper surface of the upper source/drain electrode and upper surface of the interlayer insulating pattern, gate insulating pattern filling portion of the contact hole and extending along upper surface of the active pattern, and gate electrode filling portion of the contact hole and extending along upper surface of the gate insulating pattern.

Abstract: An apparatus which analyses a depth of a holographic image is provided. The apparatus includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.

Abstract: Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a metal layer on the lower metal oxide layer, an upper metal oxide layer on the metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: Provided is a liquid crystal display device and a method for operating the liquid crystal display device. In the liquid crystal display device including a plurality of pixels, one pixel of the plurality of pixels includes a first sub pixel and a second sub pixel, which are adjacent to each other. The one pixel includes a first substrate, a first electrode provided on the first substrate, metamaterial layers provided on the first electrode, wherein the metamaterial layers include a first metamaterial layer within the first sub pixel and a second metamaterial layer within the second sub pixel, a liquid crystal layer provided on the first and second metamaterial layers, a second electrode provided on the liquid crystal layer, and a second substrate provided on the second electrode. The first and second metamaterial layers include metamaterials having properties different from each other, respectively.

Abstract: Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a lower metal layer on the lower metal oxide layer, a middle metal oxide layer on the lower metal layer, an upper metal layer on the middle metal oxide layer, an upper metal oxide layer on the upper metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Abstract: An embodiment of the inventive concept provides a thin film transistor and a manufacturing method of the same. The manufacturing method includes forming a data electrode on one side of a substrate, forming a spacer layer on a portion of the data electrode and the other side of the substrate, forming a drain electrode on a top surface of the spacer layer, forming an active layer on a sidewall of the spacer layer, the drain electrode, and the data electrode, forming a gate insulation film that covers the active layer on the sidewall of the spacer layer, and forming a doped layer on the gate insulation film and the active layer outside the gate insulation film to form impurity regions at both sides, respectively, of the active layer.

Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Abstract: Provided is a liquid crystal display device and a method for operating the liquid crystal display device. In the liquid crystal display device including a plurality of pixels, one pixel of the plurality of pixels includes a first sub pixel and a second sub pixel, which are adjacent to each other. The one pixel includes a first substrate, a first electrode provided on the first substrate, metamaterial layers provided on the first electrode, wherein the metamaterial layers include a first metamaterial layer within the first sub pixel and a second metamaterial layer within the second sub pixel, a liquid crystal layer provided on the first and second metamaterial layers, a second electrode provided on the liquid crystal layer, and a second substrate provided on the second electrode. The first and second metamaterial layers include metamaterials having properties different from each other, respectively.

Abstract: Provided are a display device and an augmented reality apparatus including the same. The display device includes a display panel including display blocks and an optics array including pin hole structures that one-to-one correspond to the display blocks. Here, each of the pin hole structures includes a pin hole and a shielding area surrounding the pin hole, and the display blocks are spaced apart from each other in a first direction parallel to a top surface of the display panel and a second direction crossing the first direction and parallel to the top surface of the display panel.

Abstract: Provided is a stretchable display device. The stretchable display device includes a substrate and a base pattern on the substrate, wherein the base pattern comprises a first portion, a second portion, and a connection portion configured to connect the first portion to the second portion. The stretchable display device includes a lower electrode on the first portion of the base pattern; an upper electrode on the lower electrode, a light emitting structure between the lower electrode and the upper electrode, and a protective layer configured to cover top and side surfaces of the upper electrode, side surfaces of the light emitting structure, a side surface of the lower electrode, and a portion of a side surface of the base pattern. The upper electrode extends to a top surface of the connection portion and a top surface of the second portion of the base pattern, and the first portion and the second portion of the base pattern extend in a first direction parallel to a top surface of the substrate.

Abstract: Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Abstract: A method for manufacturing a window includes preparing a liquid crystal device comprising a support substrate, a first electrode, a liquid crystal layer, and a sacrificial structure. The method further includes removing the sacrificial structure from the liquid crystal device, forming a second electrode disposed on a glass layer, and attaching the liquid crystal device to the second electrode.

Abstract: Provided is an electrochromic display device including: a first substrate; a second substrate on the first substrate; an electrolyte layer disposed between the first substrate and the second substrate; a first transparent electrode provided between the electrolyte layer and the first substrate; second transparent electrodes provided between the electrolyte layer and the second substrate; a first electrochromic layer provided between the first transparent electrode and the electrolyte layer; and a second electrochromic layer provided between the second transparent electrodes and the electrolyte layer, wherein the second transparent electrodes each extend in a first direction and be disposed apart from each other in a second direction perpendicular to the first direction, the second electrochromic layer extends between the second transparent electrodes and contacts a lower surface of the second substrate, the first electrochromic layer includes an inorganic electrochromic material, and the second electrochromic

Abstract: Provided is a pixel circuit. The pixel circuit includes a conversion element forming a voltage of an input level at a first node, a first transistor adjusting the voltage of the first node to a first level in response to a first signal received at a first time interval, a first capacitive element forming a voltage at a second node based on the voltage of the first node, a second transistor adjusting a level of the voltage of the second node to a second level in response to the first signal, a third transistor forming a voltage at a third node, a fourth transistor outputting a current in response to a second signal received in a second time interval, and a. fifth transistor adjusting the voltage of the third node to a third level in response to a third signal received in a third time interval.

Abstract: Provided is a pressure sensitive display device including a sensing substrate, a reaction substrate provided on the sensing substrate, and spacers provided between the sensing substrate and the reaction substrate to space the sensing substrate apart from the reaction substrate. Here, the sensing substrate includes a flexible substrate and a touch electrode provided on one surface of the flexible substrate, which faces the reaction substrate. The reaction substrate includes a transparent substrate, a transparent electrode provided on one surface of the transparent substrate, which faces the sensing substrate, and a light emitting layer disposed on the transparent electrode.

Abstract: A hologram display device includes a light source unit that emits light, a spatial light modulator that modulates the light emitted from the light source unit, and a random pinhole panel. The random pinhole panel includes a plurality of pinholes of a random position or a random size and is arranged in line with an output part of the spatial light modulator. In the hologram display device and the method of manufacturing the hologram display device, a position and size of a random pinhole on the random pinhole are not limited to inside each pixel of the spatial light modulator.

Abstract: A method for manufacturing a window includes preparing a liquid crystal device comprising a support substrate, a first electrode, a liquid crystal layer, and a sacrificial structure. The method further includes removing the sacrificial structure from the liquid crystal device, forming a second electrode disposed on a glass layer, and attaching the liquid crystal device to the second electrode.