Abstract: A plating system and a method thereof are disclosed. The plating system performs a N-stage plating drilling filling process in which a M-th stage plating drilling filling process with a M-th current density is performed on a hole of a substrate for a M-th plating time to form a M-th plating layer on the to-be-plated layer, wherein N is a positive integer equal to or greater than 3, and M is a positive integer positive integer in a range of 1 to N. Therefore, the technical effect of providing a higher drilling filling rate than conventional plating filling technology under a condition that a total thickness of plating layers is fixed can be achieved.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.

Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.

Abstract: A color correction system and a colorimeter positioning method therefore are provided. A first color block is displayed in a first display area of a display. During the period of displaying the first color block, a first sensing value is acquired for the first color block through a sensor of a colorimeter. The first sensing value is compared with a first reference value to determine whether the first sensing value meets the first specific condition. In response to the first sensing value meeting the first specific condition, a second color block is displayed in the first display area of the display. During the period of displaying the second color block, a second sensing value is acquired for the second color block through the sensor. The second sensing value is compared with a second reference value to determine whether the second sensing value meets the second specific condition.

Abstract: A machine learning method includes: distinguishing foregrounds and backgrounds of a first image to generate a first mask image; cropping the first image to generate second and third images; cropping the first mask image to generate second and third mask images, wherein a position of the second mask image and a position of the third mask image correspond to a position of the second image and a position of the third image, respectively; generating a first feature vector group of the second image and a second feature vector group of the third image by a model; generating a first matrix according to the first and second feature vector groups; generating a second matrix according to the second and third mask images; generating a function according to the first and second matrices; and adjusting the model according to the function.

Abstract: A chip package having die pads with protective layers is provided. At least one protective layer is covering and arranged at a peripheral zone of at least one die pad for minimizing area of the die pad exposed outside as well as shielding and protecting the peripheral zone of the die pad. A weld zone of the die pad is not covered by the protective layer so that the weld zone of the die pad is exposed. In a crossed-over state, one of bonding wires crossing one of the die pads with a corresponding connection pad of a carrier plate will not get across a second upper space defined by the weld zone of the rest of the die pads. Thereby the one of the bonding wires can be more isolated by the protective layers on the peripheral zones of the rest of the die pads.

Abstract: A device includes a first dielectric layer, a first conductor, an etch stop layer, a second dielectric layer, and a second conductor. The first conductor is in the first dielectric layer. The etch stop layer is over the first dielectric layer. The etch stop layer has a first surface facing the first dielectric layer and a second surface facing away from the first dielectric layer, and a concentration of carbon in the etch stop layer periodically varies from the first surface to the second surface. The second dielectric layer is over the etch stop layer. The second conductor is in the second dielectric layer and the etch stop layer and electrically connected to the first conductor.

Abstract: A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

Abstract: An IC structure includes a fin structure, a contact overlying the fin structure along a first direction, and an isolation layer between the contact and the fin structure. The isolation layer is adjacent to a portion of the contact along a second direction perpendicular to the first direction.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a substrate. A gate electrode is over the substrate and a spacer structure laterally surrounds the gate electrode. A conductive via is disposed on the gate electrode. A liner is arranged along one or more sidewalls of the spacer structure. The conductive via has a bottommost surface that has a larger width than a part of the conductive via that is laterally adjacent to one or more interior sidewalls of the liner.

Abstract: A chip package with at least one electromagnetic interference (EMI) shielding layer and at least one ground wire and a method of manufacturing the same are provided. The chip package includes a chip package unit, at least one EMI shielding layer, and at least one ground wire. The ground wire which consists of a first end and a second end opposite to the first end is inserted through the EMI shielding layer and a first insulating layer of the chip package unit. The first end is electrically connected with the EMI shielding layer while the second end of the ground wire is electrically connected with at least one grounding end of at least one first circuit layer of the chip package unit for protection against static electricity. Thereby malfunction of an electronic system with semiconductor chips due to static electricity can be avoided.

Abstract: A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: An isolated bispecific antibody or antigen-binding portion thereof includes a first chain which specifically binds to human PD-1(hPD-1) and blocks the interaction between hPD-1 and PD-L1, and a second chain which specifically binds to human CD47 and inhibits its interaction with SIRP-alpha, where the first chain and the second chain are coupled in a knob-in-hole format through their respective CH3 domain.

Abstract: Described is a method for detecting a calibration requirement for image sensors in a vehicle. The method includes detecting a ground pattern in a generated image associated with a surrounding of a vehicle. The method includes extracting at least one key point associated with the detected ground pattern, from the generated image. The method includes determining a relative motion parameter associated with the extracted at least one key point based on tracking of the extracted at least one key point over a period of time. The method further includes detecting the calibration requirement for the image sensor based on the determined relative motion parameter and generating an output signal based on the detected calibration requirement.