Abstract: An audio dose monitoring circuit includes: a sound level measuring circuit arranged to operably generate multiple sound level values, wherein the multiple sound level values respectively correspond to the sound levels generated by an audio playback device at multiple time points or the sound levels received by a microphone at multiple time points; an audio dose calculating circuit coupled with the sound level measuring circuit and arranged to operably generate an audio dose value corresponding to a measuring period based on the multiple sound level values and contents of a weighting table; a control circuit coupled with the audio dose calculating circuit and arranged to operably compare the audio dose value with a dose threshold to determine whether to generate a control signal or not; and an indication signal generating circuit coupled with the control circuit and arranged to operably generate a corresponding indication signal according to the control signal.

Abstract: Provided is an isolated nucleic acid molecule comprising a NKp30 transmembrane domain, and a chimeric antigen receptor comprising the same. The isolated nucleic acid molecule comprising a NKp30 transmembrane domain comprises nucleic acid sequences encoding (a) an extracellular antigen binding domain, comprising a heavy chain variable region; (b) a hinge domain; (c) a NKp30 transmembrane domain; and (d) a NKp30 cytoplasmic domain. By introducing nucleic acid sequences of the NKp30 transmembrane domain and the NKp30 cytoplasmic domain in combination with the extracellular antigen binding domain into a T cell, the resulting CAR-T cell is a multi-chain CAR-T cell with a NKp30 receptor complex. Consequently, the resulting CAR-T cell forms stable immune synapses with cancer cells and exhibits excellent cytotoxicity against cancer cells.

Abstract: A semiconductor structure can include a high voltage region, a first moat trench isolation structure electrically insulating the high voltage region from low voltage regions of the semiconductor structure, and a second moat trench isolation structure electrically insulating the high voltage region from the low voltage regions of the semiconductor structure. The first moat trench isolation structure can include dielectric sidewall spacers and a conductive fill material portion located between the dielectric sidewall spacers. The second moat trench isolation structure can include only at least one dielectric material, and can include a dielectric moat trench fill structure having a same material composition as the dielectric sidewall spacers and having a lateral thickness that is greater than a lateral thickness of the dielectric sidewall spacers and is less than twice the lateral thickness of the dielectric sidewall spacers.

Abstract: An electronic device and a display panel are provided. The display panel includes a substrate, a light-emitting unit, a blocking structure and an encapsulation layer. The substrate has a through hole, a display area, and a non-display area disposed between the through hole and the display area. The light-emitting unit is arranged on the display area. The blocking structure is arranged on the non-display area. The encapsulation layer extends from the display area to the non-display area, and includes an organic layer and a first inorganic layer. A portion of the organic layer is disposed between the blocking structure and the first inorganic layer.

Abstract: An electronic device is provided. The electronic device includes a first substrate, an insulating layer, a first conductive layer and a second conductive layer. The insulating layer is overlapped with the first substrate. The second conductive layer contacts with the first conductive layer. The first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer. The second conductive layer is disposed between the first conductive layer and the insulating layer. Moreover, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer.

Abstract: An out-of-service recovery search method includes establishing a frequency list including at least one searchable frequency, searching a suitable cell of a network according to the frequency list when the user terminal is in an out-of-service state, determining at least one first skip condition of the user terminal, performing a full-band power scan mechanism for scanning received signal strength indication (RSSIs) of user terminal supported frequency bands when the at least one first skip condition of the user terminal is absent and no suitable cell of the network is searched within the searchable frequency of the frequency list, skipping the full-band power scan mechanism when the at least one first skip condition of the user terminal is present and no suitable cell of the network is searched within the searchable frequency, and performing an RSSI sniffer for scanning a signal power of each frequency of the searchable frequency.

Abstract: A semiconductor arrangement includes a first dielectric feature passing through a semiconductive layer and a first dielectric layer over a substrate. The semiconductor arrangement includes a conductive feature passing through the semiconductive layer and the first dielectric layer and electrically coupled to the substrate. The conductive feature is adjacent the first dielectric feature and electrically isolated from the semiconductive layer by the first dielectric feature.

Abstract: A treatment method for waste water is provided. The method includes providing the waste water. The waste water includes monoethanolamine, and COD of the wastewater is in a range between 5000 mg/L and 30000 mg/L. The method further includes adjusting pH value of the wastewater to be not smaller than 11.5; transferring the wastewater to a tank, and controlling a temperature of the tank to 20° C. to 32° C.; and adding hydrogen peroxide solution and ozone into the tank, thereby obtaining degraded waste water. By controlling treatment condition of the waste water, the waste water with the monoethanolamine and high COD can be degraded by using the hydrogen peroxide solution and the ozone.

Abstract: A soldering quality inspection method and a soldering quality inspection apparatus are provided. The soldering quality inspection method includes: acquiring an inspection image; calculating, by a processing device, a dyed area percentage of an area of a part of a soldering region in the inspection image that is dyed by a dye ink relative to an area of the soldering region, and determining whether the dyed area percentage is greater than a predetermined dyed percentage. When the dyed area percentage is determined to be equal to or less than the predetermined dyed percentage, a position under inspection is determined to be of good soldering quality, and a corresponding inspection result information is generated. When the dyed area percentage is determined to be greater than the predetermined dyed percentage, the position under inspection is determined to be of poor soldering quality, and the corresponding inspection result information is generated.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.

Abstract: A three-dimensional point cloud generation method for generating a three-dimensional point cloud including one or more three-dimensional points includes: obtaining (i) a two-dimensional image obtained by imaging a three-dimensional object using a camera and (ii) a first three-dimensional point cloud obtained by sensing the three-dimensional object using a distance sensor; detecting, from the two-dimensional image, one or more attribute values of the two-dimensional image that are associated with a position in the two-dimensional image; and generating a second three-dimensional point cloud including one or more second three-dimensional points each having an attribute value, by performing, for each of the one or more attribute values detected, (i) identifying, from a plurality of three-dimensional points forming the first three-dimensional point cloud, one or more first three-dimensional points to which the position of the attribute value corresponds, and (ii) appending the attribute value to the one or more fi

Abstract: A continuous laser processing system for internal modification of transparent materials includes a pulse laser device, a scanning device, a processing platform and a control device. The pulse laser device is configured to output a laser beam. The scanning device includes a mirror group controller and a mirror group and controlled to guide the laser beam to the transparent material, wherein the mirror group is disposed at an output path of the laser beam. The processing platform is configured to carry the transparent material and controlled to move. The control device is electrically connected to the scanning device and the processing platform, and is configured to control the scanning device to form a processing trajectory at the transparent material at a scanning speed, and to control the processing platform to move at a translation speed, wherein the scanning speed is at least 20 times the translation speed.

Abstract: An antenna module includes a ground radiator, a first antenna, and a second antenna. The first antenna includes a first feeding end, a first segment, a second segment, a third segment, and a fourth segment. A first area of the first antenna and a second area including a part of the first antenna and a part of the ground radiator resonate at a first frequency band. A third area of the first antenna and the second area resonate at a second frequency band. An area including a part of the second antenna, the third segment, the first segment, and the second segment resonates at the first frequency band. An area of the second antenna and an area including the part of the second antenna, a part of the third segment, and another part of the ground radiator resonate at the second frequency band.

Abstract: An electronic device includes a casing, an antenna, and a connector. The casing includes a metal layer and a first slot and a second slot located on the metal layer. The metal layer includes a metal connecting segment, a first region, and a second region. The metal connecting segment is located between the first slot and the second slot, and the first region and the second region are separated by the first slot, the second slot, and the metal connecting segment. The antenna is connected to the first region, and the antenna is adapted to resonate at a frequency band. The connector is connected to the second region.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first wafer is provided. The first wafer includes a first substrate and a first device layer. A second wafer is provided. The second wafer includes a second substrate and a second device layer. The second device layer is bonded to the first device layer. An edge trimming process is performed on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface. The second upper surface is higher than the first upper surface. A first photoresist layer is formed. The first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region. The damaged region is removed by using the first photoresist layer as a mask. The first photoresist layer is removed.

Abstract: An active single-ended transmission cable is disclosed. The active single-ended transmission cable allows connection between a first and a second electronic device and comprises a first port, a second port, and a transmission wire. The first or second port is used for receiving or transmitting a differential signal between the first and the second electronic devices, and for converting between a differential signal and a single-ended signal. The transmission wire is used for transmitting the single-ended signal. This allows the conversion between the received or transmitted differential signal at the first and second ports into the single-ended signal so as to allow the transmission of the single-ended signal within the transmission wire.

Abstract: Embodiments of the present disclosure relate to a method, an electronic device, and a computer program product for testing. The method includes: obtaining code modification information, program error information, and test case information. The method further includes: selecting a first test case set associated with code modification records from the test case information according to the program error information. The method further includes: sorting multiple test cases in the first test case set to generate a test strategy for the code modification records. Embodiments of the present disclosure may select the best test case for current code fix to meet different test requirements and reduce the test time.

Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Abstract: Some embodiments are directed towards an image sensor device. A photodetector is disposed in a semiconductor substrate, and a transfer transistor is disposed over photodetector. The transfer transistor includes a transfer gate having a lateral portion extending over a frontside of the semiconductor substrate and a vertical portion extending to a first depth below the frontside of the semiconductor substrate. A gate dielectric separates the lateral portion and the vertical portion from the semiconductor substrate. A backside trench isolation structure extends from a backside of the semiconductor substrate to a second depth below the frontside of the semiconductor substrate. The backside trench isolation structure laterally surrounds the photodetector, and the second depth is less than the first depth such that a lowermost portion of the vertical portion of the transfer transistor has a vertical overlap with an uppermost portion of the backside trench isolation structure.

Abstract: An image sensor includes a first pixel array. The first pixel array includes multiple photo diodes and a polyhedron structure. The polyhedron structure is located above the photo diodes, and the polyhedron structure includes a bottom facet, a top facet, and at least one side facet. The bottom facet is located between the side facet and the photo diodes, and an orthogonal projection of the polyhedron structure overlaps with photo diodes. The polyhedron structure is configured to divide an incident light into a plurality of light beams focused in the photo diodes.