Abstract: The present invention provides a flow regulating assembly, including a mandrel, where a regulating chamber is provided in the mandrel; a first end portion of the mandrel is provided with a large air outlet, a side wall of the mandrel is provided with a small air outlet, and the large air outlet has an inner diameter less than that of the regulating chamber; a second end portion of the mandrel is connected to a front end of a J-T slot, and a rear end of the J-T slot is connected to a bypass pipe; a sealing member is arranged in the regulating chamber, and the sealing member has an outer diameter less than or equal to the inner diameter of the regulating chamber and greater than the inner diameter of the large air outlet; the sealing member is connected to one end of a traction member, and the other end of the traction member is led out through the bypass pipe.

Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.

Abstract: A method includes irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module. The method further includes detecting light reflected and/or scattered by the target droplet, and performing particle image velocimetry, based on the detected light, to determine a velocity of the target droplet. The method also includes adjusting a time delay between a generation of the target droplet and a generation of an excitation laser beam based on the velocity of the target droplet.

Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.

Abstract: A method includes irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module. The method further includes detecting light reflected and/or scattered by the target droplet, and performing particle image velocimetry, based on the detected light, to determine a velocity of the target droplet. The method also includes adjusting a time delay between a generation of the target droplet and a generation of an excitation laser beam based on the velocity of the target droplet.

Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank inserted into the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are aligned with the through holes of the cover. Each through hole has a minimum depth at a first position and a maximum depth at a second position. The first position is closer to a center of the cover than the second position.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: A method includes: forming a mask layer on a semiconductor wafer; forming a tin droplet, including: supplying tin to a high-pressure reservoir from a low-pressure reservoir; monitoring a level of tin in the high-pressure reservoir by at least two electrodes attached to the high-pressure reservoir; in response to the level of the tin exceeding a threshold value, supplying the tin to a droplet generator from the high-pressure reservoir; forming the tin droplet by the droplet generator using the tin supplied from the high-pressure reservoir; generating light by the tin droplet; and patterning the mask layer by the light.

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Abstract: Disclosed is an adjustable cryoablation needle, comprising a needle rod (3), a front-segment heat-insulated tube (1), a rear-segment heat-insulated tube (2), and an gas inlet structure (7) penetrating the needle rod (3) and the front-segment heat-insulated tube (1), wherein the needle rod (3) can move relative to the rear-segment heat-insulated tube (2) in the axial direction of the rear-segment heat-insulated tube (2) so as to adjust a first axial distance between the front end of the rear-segment heat-insulated tube (2) and the front end of the needle rod (3); and the front-segment heat-insulated tube (1) can move relative to the rear-segment heat-insulated tube (2) in the axial direction of the rear-segment heat-insulated tube (2). The adjustable cryoablation needle can prevent the inconvenience caused by a doctor selecting the model of the cryoablation needle.

Abstract: A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.

Abstract: A cryoadhesion apparatus includes a remote control assembly, a valve assembly, a needle catheter assembly, and a gas cylinder, the remote control assembly includes a sheath structure and a remote control, the sheath structure is provided with a catheter channel for the needle catheter assembly to pass through, two ends of the valve assembly are respectively connected to the needle catheter assembly and the gas bottle; the sheath structure is capable of squeezing the needle catheter assembly, when squeezing is maintained, the needle catheter assembly is capable of moving along with the sheath structure under a frictional force between an inner wall of the catheter channel and the needle catheter assembly; the remote control is configured to, when triggered, send a trigger signal to the valve assembly; the valve assembly is configured to transport, when receiving the trigger signal, a gas from the gas cylinder to the needle catheter assembly.

Abstract: The present invention discloses a cryoablation needle with an adjustable J-T slot position, including: a vacuum wall, a J-T slot and a J-T slot adjusting apparatus, wherein the vacuum wall includes: a needle rod and an inner tube; the needle rod is provided with a needle tip at a far end; the inner tube penetrates through the needle rod, and an interlayer is formed between the inner tube and the needle rod; the J-T slot penetrates through the inner tube; a far end of the J-T slot is capable of being switched between at least two adjusting positions relative to the vacuum wall, the two adjusting positions including: a first adjusting position and a second adjusting position; the first adjusting position is located in a target area; and the second adjusting position is located in a vacuum insulation area.

Abstract: The present invention discloses a cryoablation needle with an adjustable vacuum wall position, including: a vacuum wall, a J-T slot and a vacuum wall adjusting apparatus, the vacuum wall includes: a needle rod and an inner tube; the needle rod is provided with a needle tip at a distal end; the inner tube penetrates through the needle rod, and a cavity is formed between the inner tube and the needle rod; the J-T slot penetrates through the inner tube; a distal end of the vacuum wall is switched between at least two adjusting positions relative to the J-T slot, including: a first adjusting position and a second adjusting position; when at the first adjusting position, a distal end of the J-T slot is located in the target area; and when at the second adjusting position, the distal end of the J-T slot is located in the vacuum insulation area.

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Abstract: The present invention discloses a cryoablation needle having a J-T slot sleeve, including: a vacuum wall, a J-T slot and a J-T slot sleeve, where the vacuum wall includes: a needle rod and an inner tube; the needle rod is provided with a needle tip at a distal end; the inner tube penetrates through the needle rod, and an cavity is formed between the inner tube and the needle rod; the J-T slot and the J-T slot sleeve are sleeved inside the inner tube; the J-T slot sleeve is sleeved outside a distal end of the J-T slot; the J-T slot sleeve can move relative to the J-T slot; and a distal end of the J-T slot sleeve at least has two adjusting positions relative to the vacuum wall, a first adjusting position being located in the target area, and a second adjusting position being located in the vacuum insulation area.

Abstract: The present invention discloses a cryoablation needle having dual J-T slots, including: a vacuum wall and a J-T slot, where the vacuum wall includes: a needle rod and an inner tube; the needle rod is provided with a needle tip at a distal end; the inner tube penetrates through the needle rod, and a cavity is formed between the inner tube and the needle rod; the J-T slots include: a first J-T slot and a second J-T slot, and the first J-T slot and the second J-T slot penetrate through the inner tube; a distal end of the first J-T slot is located in the target area; and a distal end of the second J-T slot is located in the vacuum insulation area.

Abstract: A method includes: protecting a mask of a mask assembly by a frame thereon during translating the mask assembly to a position associated with a region of a substrate, the frame having height less than a focal plane associated with a selected particle size; directing extreme ultraviolet (EUV) radiation toward the mask; reflecting radiation carrying a pattern of the mask toward the mask layer; forming a feature of a semiconductor device in a layer underlying the mask layer according to the pattern.

Abstract: A control system includes a plurality of pressure sensors, each to detect a pressure in a respective dynamic gas lock (DGL) nozzle control region of a plurality of DGL nozzle control regions. Each DGL nozzle control region includes one or more DGL nozzles. The control system includes a plurality of mass flow controllers (MFCs). Each MFC of the plurality of MFCs is to control a flow velocity in a respective DGL nozzle control region of the plurality of DGL nozzle control regions. The control system includes a controller to selectively cause one or more MFCs of the plurality of MFCs to adjust flow velocities in one or more DGL nozzle control regions of the plurality of DGL nozzle control regions based on pressures detected by the plurality of pressure sensors in DGL nozzle control regions of the plurality of DGL nozzle control regions.