Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.

Abstract: A resonant switching power converter circuit including: a switching converter, a control circuit and a pre-charging circuit; wherein the control circuit controls a first switch of the switching converter in a pre-charging mode, so as to control electrical connections between a first power and at least one of plural capacitors of the switching converter, and to control other switches of the switching converter, so as to control the pre-charging circuit to charge at least one capacitor to a predetermined voltage; wherein in a start-up mode, the plural switches control electrical connections of the capacitors according to first and second operation signals, such that after the pre-charging mode ends, the switching converter subsequently operates in the start-up mode; wherein in the start-up mode, the first and second operation signals have respective ON periods, and the time lengths of the ON periods increase gradually.

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

Abstract: An electronic device including an electronic unit and a redistribution layer is disclosed. The electronic unit has connection pads. The redistribution layer is electrically connected to the electronic unit and includes a first insulating layer, a first metal layer and a second insulating layer. The first insulating layer is disposed on the electronic unit and has first openings disposed corresponding to the connection pads. The first metal layer is disposed on the first insulating layer and electrically connected to the electronic unit through the connection pads. The second insulating layer is disposed on the first metal layer. The first insulating layer includes first filler particles, and the second insulating layer includes second filler particles. The first filler particles have a first maximum particle size, the second filler particles have a second maximum particle size, and the second maximum particle size is greater than the first maximum particle size.

Abstract: Provided is a method for treating cancer by administering to a subject in need thereof with a pharmaceutical composition including a benzenesulfonamide derivative in combination with a cancer immunotherapeutic agent such as the immune check point inhibitor (ICI).

Abstract: A contact lens comprises an optical zone and a peripheral zone. The optical zone is used for vision correction. The peripheral zone surrounds the optical zone. The optical zone and the peripheral zone jointly define a geometric center and a horizontal axis passing through the geometric center. Two stabilization zones symmetrically arranged relative to the geometric center are formed in the peripheral zone. These stabilization zones gradually thicken relative to a base curved surface of the peripheral zone.

Abstract: A method includes following steps. A semiconductor fin is formed extending from a substrate. A gate structure is formed extending across the semiconductor fin. Recesses are etched in the semiconductor fin. Source/drain epitaxial structures are formed in the recesses in the semiconductor fin. Formation of each of the source/drain epitaxial structures comprises performing a first epitaxy growth process to form a bar-shaped epitaxial structure in one of the recesses, and performing a second epitaxy growth process to form a cladding epitaxial layer cladding on the bar-shaped epitaxial structure. The bar-shaped epitaxial structure has a lower phosphorous concentration than the cladding epitaxial layer.

Abstract: The present application relates to a laser cutting head with a variable spot trajectory shape and a cutting process, belonging to the field of laser cutting processing. The technical solution is that a laser cutting head with a variable spot trajectory shape includes a beam shaper, a trajectory control assembly and a focusing assembly that are successively arranged in an optical path direction; the trajectory control assembly includes a reflecting lens, an X-axis galvanometer and a Y-axis galvanometer; a rotation axis of the X-axis galvanometer is a vertical axis; a rotation axis of the Y-axis galvanometer is a horizontal axis; a reflection surface of the reflecting lens is opposite to a reflection surface of the X-axis galvanometer, and a reflection surface of the Y-axis galvanometer is opposite to the reflection surface of the X-axis galvanometer.

Abstract: The present disclosure relates to methods for the treatment of diseases or disorders (e.g., cancer) with mTOR inhibitors. Specifically, the disclosure relates to methods of treating a subject having a cancer by administering a particular dosage of an mTOR inhibitor. In some embodiments this disclosure includes methods for delaying, preventing, or treating acquired resistance to RAS inhibitors using a dosage of an mTOR inhibitor. In some embodiments, this disclosure relates to methods of treating or preventing adverse events associated with administration of an mTOR inhibitor using tacrolimus.

Abstract: The present disclosure provides a cryptocurrency securing system and a cryptocurrency securing method thereof. The system receives a cryptocurrency transaction information from a user device, and determines whether a policy data corresponding to the cryptocurrency transaction information is legal. When the policy data corresponding to the cryptocurrency transaction information is legal, the system derives a cryptocurrency private key information via a personal identification number of the user device. The system then encrypts the cryptocurrency transaction information via the cryptocurrency private key information for deriving an encrypted cryptocurrency transaction information, and broadcasts the encrypted cryptocurrency transaction information to a blockchain network.

Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emittin

Abstract: Systems, methods, circuits, and apparatuses for managing integrated circuits in memory devices are provided. In one aspect, an integrated circuit includes: a latch circuit including a latch and a sensing transistor coupled to the latch, and a compensation circuit coupled to the sensing transistor. The sensing transistor includes a gate terminal coupled to a sensing node and an additional terminal coupled to the compensation circuit, and the compensation circuit is configured to apply a control voltage to the additional terminal to compensate for a variation of a threshold voltage of the sensing transistor.

Abstract: A vehicle and components thereof are provided. The vehicle can include an apparatus having a shelving module, a post, and a mechanism.

Abstract: A circuit screening system including a target circuit under test receiving a first testing signal in a first period and a second testing signal in a second period; and a clock generating circuit providing a clock signal to the target circuit under test, the clock signal triggering the target circuit under test to receive the first testing signal in the first period and the second testing signal in the second period; the clock signal having a first profile and a second profile in the first period and the second period, respectively, and the first profile and the second profile having a phase difference.

Abstract: A source-network-load-storage coordination dispatching method in a background of a coupling of renewable energy sources, including: taking an expectation of a minimum grid operating cost in a dispatching cycle as an objective function; generating an approximate value function of an output of a set for generating electricity from renewable energy sources and a user load, and constructing a source-network-load-storage coordination dispatching model with combination of the objective function; obtaining forecast data of the output of a set for generating electricity from renewable energy sources and the user load, and inputting the forecast data into the dispatching model for solving; performing iterative updating on the approximate value function, importing the approximate value function after the iterative updating into the dispatching model for iterative solving, and terminating an iterative process until a solving result satisfies a preset convergence condition; and using a solving result of a last iteration

Abstract: A vehicle and components thereof are provided. The vehicle can include an apparatus having a shelving module, a post, and a mechanism.

Abstract: A vehicle and components thereof are provided. The vehicle can include an apparatus having a shelving module, a post, and a mechanism.

Abstract: A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.

Abstract: A semiconductor arrangement includes a first dielectric feature passing through a semiconductive layer and a first dielectric layer over a substrate. The semiconductor arrangement includes a conductive feature passing through the semiconductive layer and the first dielectric layer and electrically coupled to the substrate. The conductive feature is adjacent the first dielectric feature and electrically isolated from the semiconductive layer by the first dielectric feature.

Abstract: Microelectronic modules are described. In an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The semiconductor-based integrated passive device may include an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up. The semiconductor-based integrated passive device may be further solder bonded or hybrid bonded with the chip.