Patents by Inventor Chi-Yang Yu

Chi-Yang Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11101140
    Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hsin Wei, Hsien-Pin Hu, Shang-Yun Hou, Chi-Hsi Wu, Chen-Hua Yu, Wen-Jung Chuang, Chun-Che Chen, Jhih-Ming Lin, Chih-Ching Lin, Shih-Wen Huang, Chun Hua Chang, Tsung-Yang Hsieh
  • Publication number: 20210242119
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first under-bump metallization (UBM) pattern covered by a first dielectric layer, and the first UBM pattern includes a surface substantially leveled with a surface of the first dielectric layer. The circuit substrate is electrically coupled to the redistribution structure through a conductive joint disposed on the surface of the first UBM pattern. The insulating encapsulation is disposed on the redistribution structure to cover the circuit substrate.
    Type: Application
    Filed: June 29, 2020
    Publication date: August 5, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Lin Ho, Chin-Liang Chen, Jiun-Yi Wu, Chi-Yang Yu, Yu-Min Liang, Wei-Yu Chen
  • Publication number: 20210210464
    Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die and a second die, a first encapsulant, a second encapsulant and a RDL structure. The first die includes a first connector and a first protection layer covering sidewalls of the first connector, and the second die includes a second connector. The first encapsulant is at least disposed laterally between the first die and the second die to encapsulate first sidewalls of the first die and the second die that faces each other. The second encapsulant encapsulates second sidewalls of the first die and the second die. The RDL structure is disposed on and electrically connected to the first die and the second die. The top surfaces of the first protection layer, the first encapsulant, and the second encapsulant are in contact with a bottom surface of the RDL structure.
    Type: Application
    Filed: March 22, 2021
    Publication date: July 8, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Chien-Hsun Lee, Kuan-Lin Ho, Yu-Min Liang
  • Publication number: 20210183844
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor device, at least one second semiconductor device, at least one dummy die, an encapsulant and a redistribution structure. The first semiconductor device, the at least one second semiconductor device and at least one dummy die are laterally separated from one another, and laterally encapsulated by the encapsulant. A Young's modulus of the at least one dummy die is greater than a Young's modulus of the encapsulant. A sidewall of the at least one dummy die is substantially coplanar with a sidewall of the encapsulant. The redistribution structure is disposed over the encapsulant, and electrically connected to the first semiconductor device and the at least one second semiconductor device.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 17, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jung-Wei Cheng, Chien-Hsun Lee, Chi-Yang Yu, Hao-Cheng Hou, Hsin-Yu Pan, Tsung-Ding Wang
  • Patent number: 11011431
    Abstract: A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.
    Type: Grant
    Filed: September 12, 2020
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Yang Yu, Chien-Kuo Chang, Chih-Hao Lin, Jung Tsung Cheng, Kuan-Lin Ho
  • Publication number: 20210098325
    Abstract: A semiconductor package including a first semiconductor device, a second semiconductor device, an insulating encapsulant, a redistribution structure and a supporting element is provided. The insulating encapsulant encapsulates the first semiconductor device and the second semiconductor device. The redistribution structure is over the first semiconductor device, the second semiconductor device and the insulating encapsulant. The redistribution structure is electrically connected to the first semiconductor device and the second semiconductor device. The supporting element is embedded in one of the insulating encapsulant and the redistribution structure.
    Type: Application
    Filed: January 20, 2020
    Publication date: April 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chien-Hsun Lee, Jung-Wei Cheng, Tsung-Ding Wang, Yu-Min Liang
  • Patent number: 10957672
    Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, a second encapsulant, and a plurality of conductive terminals. The first encapsulant is at least disposed between the first die and the second die, and on the second die. The second encapsulant is aside the first die and the second die. The conductive terminals are electrically connected to the first die and the second die through a redistribution layer (RDL) structure. An interface is existed between the first encapsulant and the second encapsulant.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Chien-Hsun Lee, Kuan-Lin Ho, Yu-Min Liang
  • Publication number: 20210020606
    Abstract: A method of manufacturing a semiconductor structure includes providing a substrate including a redistribution layer (RDL) disposed over the substrate, disposing a first patterned mask over the RDL, disposing a first conductive material over the RDL exposed from the first patterned mask to form a first conductive pillar, removing the first patterned mask, disposing a second patterned mask over the RDL, disposing a second conductive material over the RDL exposed from the second patterned mask to form a second conductive pillar, removing the second patterned mask, disposing a first die over the first conductive pillar, and disposing a second die over the second conductive pillar. A height of the second conductive pillar is substantially greater than a height of the first conductive pillar.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 21, 2021
    Inventors: CHI-YANG YU, KUAN-LIN HO, CHIN-LIANG CHEN, YU-MIN LIANG
  • Publication number: 20200411385
    Abstract: A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.
    Type: Application
    Filed: September 12, 2020
    Publication date: December 31, 2020
    Inventors: CHI-YANG YU, CHIEN-KUO CHANG, CHIH-HAO LIN, JUNG TSUNG CHENG, KUAN-LIN HO
  • Publication number: 20200328173
    Abstract: An integrated fan-out package includes a die, an encapsulant, a seed layer, a conductive pillar, a redistribution structure, and a buffer layer. The encapsulant encapsulates the die. The seed layer and the conductive pillar are sequentially stacked over the die and the encapsulant. The redistribution structure is over the die and the encapsulant. The redistribution structure includes a conductive pattern and a dielectric layer. The conductive pattern is directly in contact with the seed layer and the dielectric layer covers the conductive pattern and surrounds the seed layer and the conductive pillar. The buffer layer is disposed over the redistribution structure. The seed layer is separate from the dielectric layer by the buffer layer, and a Young's modulus of the buffer layer is higher than a Young's modulus of the dielectric layer of the redistribution structure.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Hai-Ming Chen, Kuan-Lin Ho, Yu-Min Liang
  • Patent number: 10804245
    Abstract: A method of manufacturing a semiconductor structure includes providing a substrate including a redistribution layer (RDL) disposed over the substrate, disposing a first patterned mask over the RDL, disposing a first conductive material over the RDL exposed from the first patterned mask to form a first conductive pillar, removing the first patterned mask, disposing a second patterned mask over the RDL, disposing a second conductive material over the RDL exposed from the second patterned mask to form a second conductive pillar, removing the second patterned mask, disposing a first die over the first conductive pillar, and disposing a second die over the second conductive pillar. A height of the second conductive pillar is substantially greater than a height of the first conductive pillar.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Yang Yu, Kuan-Lin Ho, Chin-Liang Chen, Yu-Min Liang
  • Patent number: 10790210
    Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a die, a dummy cube, a stress relaxation layer, an encapsulant and a redistribution structure. The dummy cube is disposed beside the die. The stress relaxation layer covers a top surface of the dummy cube. The encapsulant encapsulates the die and the dummy cube. The redistribution structure is disposed over the encapsulant and is electrically connected to the die. The stress relaxation layer is interposed between the dummy cube and the redistribution structure.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: September 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chien-Hsun Lee, Yu-Min Liang
  • Patent number: 10777467
    Abstract: A semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a dielectric layer disposed over the second surface or below the first surface; a polymeric layer disposed over or below the dielectric layer; an isolation layer surrounding and contacted with the substrate, the dielectric layer and the polymeric layer; a die disposed over the polymeric layer; a first conductive bump disposed below the first surface of the substrate; and a second conductive bump disposed between the second surface of the substrate and the die.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Yang Yu, Chien-Kuo Chang, Chih-Hao Lin, Jung Tsung Cheng, Kuan-Lin Ho
  • Publication number: 20200279790
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.
    Type: Application
    Filed: May 14, 2020
    Publication date: September 3, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Kuan-Lin Ho, Yu-Min Liang, Wen-Lin Chen
  • Publication number: 20200219788
    Abstract: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a semiconductor substrate having a plurality of dies thereon; dispensing an underfill material and a molding compound to fill spaces beneath and between the dies; disposing a temporary carrier over the dies; thinning a thickness of the semiconductor substrate; performing back side metallization upon the thinned semiconductor substrate; removing the temporary carrier; and attaching a plate over the dies. An associated semiconductor structure is also disclosed.
    Type: Application
    Filed: March 17, 2020
    Publication date: July 9, 2020
    Inventors: CHIN-LIANG CHEN, CHI-YANG YU, KUAN-LIN HO, YU-MIN LIANG
  • Patent number: 10700031
    Abstract: An integrated fan-out package includes a die, an encapsulant, a redistribution structure, a seed layer, conductive pillars, and a buffer layer. The encapsulant encapsulates the die. The redistribution structure is over the die and the encapsulant. The redistribution structure includes dielectric layers and conductive patterns. The dielectric layers are sequentially stacked and the conductive patterns are sandwiched between the dielectric layers. The seed layer and the conductive pillars are sequentially stacked over the redistribution structure. The seed layer is directly in contact with the conductive patterns closest to the conductive pillars. The buffer layer is disposed over the redistribution structure. The dielectric layer closest to the conductive pillars and the buffer layer are sandwiched between the seed layer and the conductive patterns closest to the conductive pillars.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: June 30, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Hai-Ming Chen, Kuan-Lin Ho, Yu-Min Liang
  • Patent number: 10658263
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: May 19, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Kuan-Lin Ho, Yu-Min Liang, Wen-Lin Chen
  • Patent number: 10622278
    Abstract: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a semiconductor substrate having a plurality of dies thereon; dispensing an underfill material and a molding compound to fill spaces beneath and between the dies; disposing a temporary carrier over the dies; thinning a thickness of the semiconductor substrate; performing back side metallization upon the thinned semiconductor substrate; removing the temporary carrier; and attaching a plate over the dies. An associated semiconductor structure is also disclosed.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: April 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chin-Liang Chen, Chi-Yang Yu, Kuan-Lin Ho, Yu-Min Liang
  • Publication number: 20200066598
    Abstract: A semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a dielectric layer disposed over the second surface or below the first surface; a polymeric layer disposed over or below the dielectric layer; an isolation layer surrounding and contacted with the substrate, the dielectric layer and the polymeric layer; a die disposed over the polymeric layer; a first conductive bump disposed below the first surface of the substrate; and a second conductive bump disposed between the second surface of the substrate and the die.
    Type: Application
    Filed: November 4, 2019
    Publication date: February 27, 2020
    Inventors: CHI-YANG YU, CHIEN-KUO CHANG, CHIH-HAO LIN, JUNG TSUNG CHENG, KUAN-LIN HO
  • Publication number: 20200043819
    Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a die, a dummy cube, a stress relaxation layer, an encapsulant and a redistribution structure. The dummy cube is disposed beside the die. The stress relaxation layer covers a top surface of the dummy cube. The encapsulant encapsulates the die and the dummy cube. The redistribution structure is disposed over the encapsulant and is electrically connected to the die. The stress relaxation layer is interposed between the dummy cube and the redistribution structure.
    Type: Application
    Filed: October 25, 2018
    Publication date: February 6, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chien-Hsun Lee, Yu-Min Liang