Abstract: The disclosure provides a wiping device configured for a touch surface having capacitive touch function. The wiping device includes a shell, a plurality of induction elements and an erasing body. The shell includes a conductive material. The induction elements are respectively electrically connected to the shell. The induction elements are separated from each other. The erasing body is disposed on the induction element. At least a portion of the erasing body includes an insulating material. When the wiping device is in contact with the touch surface, at least two of the induction elements enable the touch surface to generate an erasing function command. The disclosure can simultaneously erase handwriting of writing device on the touch surface and delete writing track information corresponding to handwriting of writing device in the electronic device.

Abstract: A writing device including a conductive pen tube, a pen head and a conductive ink is provided. The conductive pen tube contains the conductive ink adapted to be erased. The conductive ink is electrically connected to the conductive pen tube. At least a part of an outside surface of the conductive pen tube contacting a user is a conductor. The pen head is connected to the conductive pen tube. The pen head is used for outputting the conductive ink to a writing surface to form a physical handwriting on the writing surface. When the pen head contacts the writing surface, the writing surface generates a signal.

Abstract: A stylus including a pen rod, an ink core, and an electrically conductive element and a touch system are provided. The pen rod has an opening and the material thereof includes an electrically conductive material. The ink core is partially disposed inside the pen rod and a section of the ink core protrudes out of the opening. A terminal of the section is adapted to touch a touch writing surface to form an ink script on the touch writing surface. The electrically conductive element is disposed at the opening of the pen rod and includes a ring-shaped portion located between the opening of the pen rod and the terminal of the section. When the terminal of the ink core touches the touch writing surface, a gap is maintained between the ring-shaped portion and the touch writing surface and a touch sensing signal is generated.

Abstract: An immunoconjugate includes an anti-Globo H antibody, or a binding fragment thereof, and a therapeutic agent or a label, having the formula: Ab?(L?D)m, wherein Ab is the anti-Globo H antibody or the binding fragment thereof, L is a linker or a direct bond, D is the therapeutic agent or the label, and m is an integer from 1 to 8. The antibody may be a monoclonal antibody, which may be a humanized antibody. A method for treating a cancer includes administering to a subject in need of such treatment a pharmaceutically effective amount of an immunoconjugate containing an antibody against Globo H, or a binding fragment thereof, and a therapeutic agent covalently conjugated with the antibody.

Abstract: An asymmetric heterodimeric antibody includes a knob structure formed in a CH3 domain of a first heavy chain; a hole structure formed in a CH3 domain of a second heavy chain, wherein the hole structure is configured to accommodate the knob structure so that a heterodimeric antibody is formed; and a T-cell targeting domain fused to the CH3 domain of the first heavy chain or the second heavy chain, wherein the T-cell targeting domain binds specifically to an antigen on the T-cell. The T-cell targeting domain is a ScFv or Fab derived from an anti-CD3 antibody. The asymmetric heterodimeric antibody may have L234A and L235A mutations or L235A and G237A such that its effector binding is compromised.

Abstract: A bispecific anti-Globo H antibody includes an anti-Globo H antibody that binds specifically to Globo H; and a T-cell targeting domain fused to a CH3 domain of a heavy chain of the anti-Globo H antibody, wherein the T-cell targeting domain binds specifically to an antigen on T-cells; and wherein the anti-Globo H antibody comprises mutations at an effector binding site such that the bispecific anti-Globo H antibody has a diminished effector function. The T-cell targeting domain is a ScFv or Fab from an anti-CD3 antibody.

Abstract: The disclosure is related to a method for constructing hybrid network spanning trees, a method of redundancy, and a control system thereof. The method and system are adapted to a hybrid network system including at least one software-defined network (SDN) and at least one non-SDN network. In the method, a controller of the SDN is employed to collect network packets over the hybrid network. After analyzing the information carried in the network packets, the information relating to the topology can be obtained. Therefore, all the possible spanning trees can be constituted according to the topology. As well, the path delay and path bandwidth respectively for the SDN and non-SDN can also be obtained. The information allows the system to render utility function for every spanning tree. The most suitable spanning tree over the hybrid network system is applied. A mechanism of redundancy is also provided.

Abstract: The disclosure is related to a method for constructing hybrid network spanning trees, a method of redundancy, and a control system thereof. The method and system are adapted to a hybrid network system including at least one software-defined network (SDN) and at least one non-SDN network. In the method, a controller of the SDN is employed to collect network packets over the hybrid network. After analyzing the information carried in the network packets, the information relating to the topology can be obtained. Therefore, all the possible spanning trees can be constituted according to the topology. As well, the path delay and path bandwidth respectively for the SDN and non-SDN can also be obtained. The information allows the system to render utility function for every spanning tree. The most suitable spanning tree over the hybrid network system is applied. A mechanism of redundancy is also provided.

Abstract: A humanized antibody, or a binding fragment thereof, wherein the humanized antibody binds human ENO1 (GenBank: AAH50642.1), wherein the antibody comprises a light chain variable region (VL) domain comprising a CDR1 having the amino acid sequence LCDR1 (RASENIYSYLT; SEQ ID NO: 6) and a CDR2 having the amino acid sequence LCDR2 (NAKTLPE; SEQ ID NO: 7) and a CDR3 having the amino acid sequence LCDR3 (QHHYGTPYT; SEQ ID NO: 8) and an antibody heavy chain variable region (VH) domain comprising a CDR1 having the amino acid sequence HCDR1 (GYTFTSCVMN; SEQ ID NO: 3), a CDR2 having the amino acid sequence HCDR2 (YINPYNDGTKYNEKFKG; SEQ ID NO: 4) and a CDR3 having the amino acid sequence HCDR3 (EGFYYGNFDN; SEQ ID NO: 5), wherein framework regions in the light chain variable region (VL) domain and the heavy chain variable region (VH) domain comprise amino acid sequences from a human immunoglobulin.

Abstract: A humanized antibody, or a binding fragment thereof, wherein the humanized antibody binds human ENO1 (GenBank: AAH50642.1), wherein the antibody comprises a light chain variable region (VL) domain comprising a CDR1 having the amino acid sequence LCDR1 (RASENIYSYLT; SEQ ID NO: 6) and a CDR2 having the amino acid sequence LCDR2 (NAKTLPE; SEQ ID NO: 7) and a CDR3 having the amino acid sequence LCDR3 (QHHYGTPYT; SEQ ID NO: 8) and an antibody heavy chain variable region (VH) domain comprising a CDR1 having the amino acid sequence HCDR1 (GYTFTSCVMN; SEQ ID NO: 3), a CDR2 having the amino acid sequence HCDR2 (YINPYNDGTKYNEKFKG; SEQ ID NO: 4) and a CDR3 having the amino acid sequence HCDR3 (EGFYYGNFDN; SEQ ID NO: 5), wherein framework regions in the light chain variable region (VL) domain and the heavy chain variable region (VH) domain comprise amino acid sequences from a human immunoglobulin.

Abstract: A humanized antibody, or a scFv, Fab, or F(ab?)2 thereof, includes: a heavy chain variable region, or a homologous variant thereof, wherein the heavy chain variable region includes: heavy chain framework regions, CDRH1 that has the sequence of SEQ ID NO:19, CDRH2 that has the sequence of SEQ ID NO:20, and CDRH3 that has the sequence of SEQ ID NO:21, wherein the heavy chain variable region and the homologous variant share at least 90% sequence identity in the heavy chain framework regions; and a light chain variable region, or a homologous variant thereof, that includes: light chain framework regions, CDRL1 that has the sequence of SEQ ID NO:22, CDRL2 that has the sequences of SEQ ID NO:23, and CDRL3 that has the sequences of SEQ ID NO:24, wherein the light chain variable region and the homologous variant share at least 90% sequence identity in the light chain framework regions.

Abstract: FLB5M5 is a humanized monoclonal antibody with three mutated amino acids in the CDRs relative to its parental mouse anti-IL-20 monoclonal antibody 7E and five mutated amino acids of the light-chain framework region relative to the amino acids of the light-chain framework region of human V?2. FLB5M5 not only retains binding specificity toward IL-20 but also has a better binding affinity than 7E for IL-20. FLB5M5 is also less immunogenic than 7E to the human host in clinical application. A mutation in the light chain CDR to tyrosine increases binding affinity to IL-20. A method for treating rheumatoid arthritis using FLB5M5 is also disclosed.

Abstract: A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.

Abstract: A method for fabricating semiconductor devices includes: (a) forming over a temporary substrate a sacrificial film layer; (b) growing laterally and epitaxially an epitaxial film layer; (c) forming over the epitaxial film layer a patterned mask that covers partially the epitaxial film layer and that defines a plurality of through holes to expose a plurality of epitaxial surface regions, respectively; (d) forming a plurality of conductive members respectively in the through holes and on the epitaxial surface regions; (e) removing the patterned mask and removing a part of the epitaxial film layer and a part of the sacrificial film layer beneath the patterned mask; (f) removing the sacrificial film layer; and (g) removing the temporary substrate.

Abstract: An embodiment of the invention provides a solid hydrogen fuel with an initial heating mechanism, including: a solid hydrogen fuel; and a heating promoter disposed on at least one surface of the solid hydrogen fuel, wherein the heating promoter proceeds with an exothermal reaction when contacted with water. Another embodiment of the invention provides: a solid hydrogen fuel with an initial heating mechanism, including a solid hydrogen fuel; and an electrical heating element in contact with the solid hydrogen fuel.

Abstract: A method for fabricating semiconductor devices includes: (a) forming over a temporary substrate a sacrificial film layer; (b) growing laterally and epitaxially an epitaxial film layer; (c) forming over the epitaxial film layer a patterned mask that covers partially the epitaxial film layer and that defines a plurality of through holes to expose a plurality of epitaxial surface regions, respectively; (d) forming a plurality of conductive members respectively in the through holes and on the epitaxial surface regions; (e) removing the patterned mask and removing a part of the epitaxial film layer and a part of the sacrificial film layer beneath the patterned mask; (f) removing the sacrificial film layer; and (g) removing the temporary substrate.

Abstract: A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.