Abstract: An integrated circuit device includes a digitally controlled oscillator (DCO), two charge-sharing capacitors, two charge-sharing switches, two pre-charge switches, and two DACs. The DCO has a first inverter and a second inverter. A first charge-sharing capacitor has a first terminal coupled to an input terminal of the first inverter through a first charge-sharing switch. A first DAC has an output terminal coupled to the first terminal of the first charge-sharing capacitor through a first pre-charge switch. A second charge-sharing capacitor has a first terminal coupled to an input terminal or an output terminal of the second inverter through a second charge-sharing switch. A second DAC has an output terminal coupled to the first terminal of the second charge-sharing capacitor through a second pre-charge switch.

Abstract: An electronic circuit and a method for operating the electronic circuit are provided. The electronic circuit includes a digital filter and a jitter optimization device. The digital filter is configured to receive a first signal and generate a second signal by filtering the first signal. The jitter optimization device is configured to receive the second signal and generate a first parameter and a second parameter according to the second signal. The jitter optimization device is configured to provide a first feature and a second feature associated with the second signal, and the first parameter and the second parameter are generated in response to the first feature or the second feature.

Abstract: A method includes identifying a cell in the layout diagram as a violated cell that fails to pass one or more design rules related to IR drops, and classifying a root cause of the violated cell with a root cause class. The method also includes determining a searching area for searching safe region candidates, and finding a selected cell for moving based upon the root cause class of the root cause. The method further includes finding a safe region in the searching area for moving the selected cell, and moving the selected cell to the safe region if the safe region is found within the searching area.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.

Abstract: An electronic circuit and a method for operating the electronic circuit are provided. The electronic circuit includes a digital filter and a jitter optimization device. The digital filter is configured to receive a first signal and generate a second signal by filtering the first signal. The jitter optimization device is configured to receive the second signal and generate a first parameter and a second parameter according to the second signal. The jitter optimization device is configured to provide a first feature and a second feature associated with the second signal, and the first parameter and the second parameter are generated in response to the first feature or the second feature.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.

Abstract: An electronic circuit and a method of error correction are provided. The electronic circuit includes a time-to-digital converter (TDC) and an error cancelation circuit. The TDC is configured to generate a first signal. The error cancelation circuit is configured to evaluate a majority of bit values of at least a portion of the first signal to generate a second signal. The number of transitions within the second signal is less than the number of transitions within the first signal.

Abstract: An electronic circuit and a method of error correction are provided. The electronic circuit includes a time-to-digital converter (TDC) and an error cancelation circuit. The TDC is configured to generate a first signal. The error cancelation circuit is configured to evaluate a majority of bit values of at least a portion of the first signal to generate a second signal. The number of transitions within the second signal is less than the number of transitions within the first signal.

Abstract: A method is provided, including following operations: receiving, by a static voltage drop (SIR) prediction circuitry, floorplan data of a floorplan layout of a semiconductor device; generating a first SIR result by a machine learning model based on the floorplan data; generating a first similarity value based on a comparison of the floorplan data with a plurality of training data; generating a second SIR result based on the first SIR result and a first compensation value, corresponding to the first similarity value, in a mapping table; and generating a bump assignment data to update the floorplan data based on a comparison between the second SIR result with a plurality of predetermined SIR values.

Abstract: A method of performing a design rule check includes clustering at least one of a plurality of rules with overlapping operations from a plurality of operations or the plurality of operations with overlapping rules from the plurality of rules. The method further includes at least one of transforming at least one of the clustered plurality of operations into a first operation group or a second operation group, or transforming at least one of the clustered plurality of rules into a first rule group or a second rule group. The method even further includes at least one of assigning at least one of the first operation group to a first processor or the second operation group to a second processor, or assigning at least one of the first rule group to the first processor or the second rule group to the second processor.

Abstract: Systems and methods are provided for hopping a digitally controlled oscillator (DCO) among a plurality of channels, wherein a gain of the DCO KDCO is a nonlinear function of frequency. A first normalized tuning word (NTW) corresponding to a first channel of the plurality of channels is generated. A first normalizing gain multiplier X is generated based on the nonlinear function of frequency, on an estimate of the nonlinear function of frequency, at a first frequency corresponding to the first channel. The first NTW is multiplied by the first X to obtain a first oscillator tuning word (OTW). The first OTW is input to the DCO to cause the DCO to hop to the first channel. A system for hopping among a plurality of channels at a plurality of respective frequencies comprises a phase-locked loop (PLL), a digitally controlled oscillator (DCO), a multiplexer, and an arithmetic module.

Abstract: A circuit is disclosed. The circuit includes a time-to-digital converter (TDC), and an evaluation circuit coupled to the TDC and a phase-locked loop (PLL) external to the circuit.

Abstract: A circuit is disclosed. The circuit includes a time-to-digital converter (TDC), and an evaluation circuit coupled to the TDC and a phase-locked loop (PLL) external to the circuit.

Abstract: Systems and methods are provided for hopping a digitally controlled oscillator (DCO) among a plurality of channels, wherein a gain of the DCO KDCO is a nonlinear function of frequency. A first normalized tuning word (NTW) corresponding to a first channel of the plurality of channels is generated. A first normalizing gain multiplier X is generated based on the nonlinear function of frequency, on an estimate of the nonlinear function of frequency, at a first frequency corresponding to the first channel. The first NTW is multiplied by the first X to obtain a first oscillator tuning word (OTW). The first OTW is input to the DCO to cause the DCO to hop to the first channel. A system for hopping among a plurality of channels at a plurality of respective frequencies comprises a phase-locked loop (PLL), a digitally controlled oscillator (DCO), a multiplexer, and an arithmetic module.

Abstract: Provided is a light-emitting device including a substrate, a first light-emitting unit, a second light-emitting unit, a third light-emitting unit, a blue light absorbing photoresist layer and an atomic layer deposition (ALD) gas barrier layer. The first light-emitting unit includes a first micro LED device and a first light conversion layer wrapping the first micro LED device, the second light-emitting unit includes a second micro LED device and a second light conversion layer wrapping the second micro LED device, and the third light-emitting unit includes a third micro LED device and the third light conversion layer wrapping the third micro LED device. The blue light absorbing photoresist layer covers the first and second light-emitting units, while exposing the third light-emitting unit. The ALD gas barrier layer wraps the first, second, and third light-emitting units, and the blue light absorbing photoresist layer.

Abstract: A method of designing an integrated circuit (IC) device includes identifying, with a processor, a pin failing a test to determine an antenna effect, identifying, with the processor, a net corresponding to the identified pin failing the test to determine the antenna effect, and creating, with the processor, an engineering change order (ECO) script based on the identified net to insert a diode to address the antenna effect.

Abstract: An integrated circuit device includes a digitally controlled oscillator (DCO), two charge-sharing capacitors, two charge-sharing switches, two pre-charge switches, and two DACs. The DCO has a first inverter and a second inverter. A first charge-sharing capacitor has a first terminal coupled to an input terminal of the first inverter through a first charge-sharing switch. A first DAC has an output terminal coupled to the first terminal of the first charge-sharing capacitor through a first pre-charge switch. A second charge-sharing capacitor has a first terminal coupled to an input terminal or an output terminal of the second inverter through a second charge-sharing switch. A second DAC has an output terminal coupled to the first terminal of the second charge-sharing capacitor through a second pre-charge switch.

Abstract: A backlight module and a display apparatus are provided. The backlight module includes a quantum fluorescent film. The quantum fluorescent film includes a light conversion layer. The light conversion layer includes a resin material, a plurality of quantum dots and a plurality of phosphors. The plurality of quantum dots and the plurality of phosphors are dispersed in the resin material.

Abstract: An electronic circuit and a method of error correction are provided. The electronic circuit includes a time-to-digital converter (TDC) and an error cancelation circuit. The TDC is configured to generate a first signal. The error cancelation circuit is configured to evaluate a majority of bit values of at least a portion of the first signal to generate a second signal. The number of transitions within the second signal is less than the number of transitions within the first signal.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.