Abstract: Provided is a backlight unit including a light source, an encapsulation layer, and a green quantum dot film. The light source emits a blue light. The encapsulation layer encapsulates the light source. The encapsulation layer includes red phosphors and yellow phosphors. The green quantum dot film is disposed above the light source and the encapsulation layer. The blue light is transmitted through the encapsulation layer and the green quantum dot film to generate a white light. A display device including the said backlight unit is also provided.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.

Abstract: A frequency generator is disclosed. The frequency generator is for generating an oscillator clock according to a reference clock, and the frequency generator is used in a frequency hopping system that switches a carrier frequency among a plurality of channels, and the carrier frequency further carries a modulation frequency for data transmission. The frequency generator includes: a frequency hopping and modulation control unit, arranged for generating a current channel according to a channel hopping sequence and a frequency command word (FCW) based on the reference clock, a digital-controlled oscillator (DCO), arranged for to generating the oscillator clock according to an oscillator tuning word (OTW) obtained according to the estimated DCO normalization value. An associated method is also disclosed.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.

Abstract: Systems and methods are provided for hopping a digitally controlled oscillator (DCO) among a plurality of channels, wherein a gain of the DCO KDCO is a nonlinear function of frequency. A first normalized tuning word (NTW) corresponding to a first channel of the plurality of channels is generated. A first normalizing gain multiplier X is generated based on the nonlinear function of frequency, on an estimate of the nonlinear function of frequency, at a first frequency corresponding to the first channel. The first NTW is multiplied by the first X to obtain a first oscillator tuning word (OTW). The first OTW is input to the DCO to cause the DCO to hop to the first channel. A system for hopping among a plurality of channels at a plurality of respective frequencies comprises a phase-locked loop (PLL), a digitally controlled oscillator (DCO), a multiplexer, and an arithmetic module.

Abstract: A frequency generator is disclosed. The frequency generator is for generating an oscillator clock according to a reference clock, and the frequency generator is used in a frequency hopping system that switches a carrier frequency among a plurality of channels, and the carrier frequency further carries a modulation frequency for data transmission. The frequency generator includes: a frequency hopping and modulation control unit, arranged for generating a current channel according to a channel hopping sequence and a frequency command word (FCW) based on the reference clock, a digital-controlled oscillator (DCO), arranged for to generating the oscillator clock according to an oscillator tuning word (OTW) Obtained according to the estimated DCO normalization value. An associated method is also disclosed.

Abstract: A circuit is disclosed. The circuit includes a time-to-digital converter (TDC), and an evaluation circuit coupled to the TDC and a phase-locked loop (PLL) external to the circuit.

Abstract: Systems and methods are provided for hopping a digitally controlled oscillator (DCO) among a plurality of channels, wherein a gain of the DCO KDCO is a nonlinear function of frequency. A first normalized tuning word (NTW) corresponding to a first channel of the plurality of channels is generated. A first normalizing gain multiplier X is generated based on the nonlinear function of frequency, on an estimate of the nonlinear function of frequency, at a first frequency corresponding to the first channel. The first NTW is multiplied by the first X to obtain a first oscillator tuning word (OTW). The first OTW is input to the DCO to cause the DCO to hop to the first channel. A system for hopping among a plurality of channels at a plurality of respective frequencies comprises a phase-locked loop (PLL), a digitally controlled oscillator (DCO), a multiplexer, and an arithmetic module.

Abstract: A semiconductor device manufacturing method includes forming fins in first and second regions defined on a substrate. The fins include first fin, second fin, third fin, and fourth fin. A dielectric layer is formed over fins and a work function adjustment layer is formed over dielectric layer. A hard mask is formed covering third and fourth fins. A first conductive material layer is formed over first fin and not over second fin. A second conductive material layer is formed over first and second fins. A first metal gate electrode fill material is formed over first and second fins. The hard mask covering third and fourth fins is removed. A third conductive material layer is formed over third fin and not over fourth fin. A fourth conductive material layer is formed over third and fourth fins, and a second metal gate electrode fill material is formed over third and fourth fins.

Abstract: Systems and methods for compensating a non-linearity of a digitally controlled oscillator (DCO) are presented. Data comprising a plurality of silicon measurements is received. Each silicon measurement in the plurality of silicon measurements is compared to an ideal value. Based on the comparing, a plurality of compensation vectors is generated. Each compensation vector comprises at least one silicon measurement. At least one frequency is adjusted based on a compensation vector in the plurality of compensation vectors. A digitally-controlled oscillator frequency is generated based on the adjusted at least one frequency.

Abstract: A frequency generator is disclosed. The frequency generator is for generating an oscillator clock according to a reference clock, and the frequency generator is used in a frequency hopping system that switches a carrier frequency among a plurality of channels, and the carrier frequency further carries a modulation frequency for data transmission. The frequency generator includes: a frequency hopping and modulation control unit, arranged for generating a current channel according to a channel hopping sequence and a frequency command word (FCW) based on the reference clock, a digital-controlled oscillator (DCO), arranged for to generating the oscillator clock according to an oscillator tuning word (OTW) Obtained according to the estimated DCO normalization value. An associated method is also disclosed.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.

Abstract: A semiconductor device manufacturing method includes forming fins in first and second regions defined on a substrate. The fins include first fin, second fin, third fin, and fourth fin. A dielectric layer is formed over fins and a work function adjustment layer is formed over dielectric layer. A hard mask is formed covering third and fourth fins. A first conductive material layer is formed over first fin and not over second fin. A second conductive material layer is formed over first and second fins. A first metal gate electrode fill material is formed over first and second fins. The hard mask covering third and fourth fins is removed. A third conductive material layer is formed over third fin and not over fourth fin. A fourth conductive material layer is formed over third and fourth fins, and a second metal gate electrode fill material is formed over third and fourth fins.

Abstract: A frequency generator is disclosed. The frequency generator is for generating an oscillator clock according to a reference clock, and the frequency generator is used in a frequency hopping system that switches a carrier frequency among a plurality of channels, and the carrier frequency further carries a modulation frequency for data transmission. The frequency generator includes: a frequency hopping and modulation control unit, arranged for generating a current channel according to a channel hopping sequence and a frequency command word (FCW) based on the reference clock, a digital-controlled oscillator (DCO), arranged for to generating the oscillator clock according to an oscillator tuning word (OTW) obtained according to the estimated DCO normalization value. An associated method is also disclosed.

Abstract: Systems and methods for compensating a non-linearity of a digitally controlled oscillator (DCO) are presented. Data comprising a plurality of silicon measurements is received. Each silicon measurement in the plurality of silicon measurements is compared to an ideal value. Based on the comparing, a plurality of compensation vectors is generated. Each compensation vector comprises at least one silicon measurement. At least one frequency is adjusted based on a compensation vector in the plurality of compensation vectors. A digitally-controlled oscillator frequency is generated based on the adjusted at least one frequency.

Abstract: Systems and methods are provided for hopping a digitally controlled oscillator (DCO) among a plurality of channels, wherein a gain of the DCO KDCO is a nonlinear function of frequency. A first normalized tuning word (NTW) corresponding to a first channel of the plurality of channels is generated. A first normalizing gain multiplier X is generated based on the nonlinear function of frequency, on an estimate of the nonlinear function of frequency, at a first frequency corresponding to the first channel. The first NTW is multiplied by the first X to obtain a first oscillator tuning word (OTW). The first OTW is input to the DCO to cause the DCO to hop to the first channel. A system for hopping among a plurality of channels at a plurality of respective frequencies comprises a phase-locked loop (PLL), a digitally controlled oscillator (DCO), a multiplexer, and an arithmetic module.

Abstract: Systems and methods for compensating a non-linearity of a digitally controlled oscillator (DCO) are presented. Data comprising a plurality of silicon measurements is received. Each silicon measurement in the plurality of silicon measurements is compared to an ideal value. Based on the comparing, a plurality of compensation vectors is generated. Each compensation vector comprises at least one silicon measurement. At least one frequency is adjusted based on a compensation vector in the plurality of compensation vectors. A digitally-controlled oscillator frequency is generated based on the adjusted at least one frequency.

Abstract: Systems and methods are provided for hopping a digitally controlled oscillator (DCO) among a plurality of channels, wherein a gain of the DCO KDCO is a nonlinear function of frequency. A first normalized tuning word (NTW) corresponding to a first channel of the plurality of channels is generated. A first normalizing gain multiplier X is generated based on the nonlinear function of frequency, on an estimate of the nonlinear function of frequency, at a first frequency corresponding to the first channel. The first NTW is multiplied by the first X to obtain a first oscillator tuning word (OTW). The first OTW is input to the DCO to cause the DCO to hop to the first channel. A system for hopping among a plurality of channels at a plurality of respective frequencies comprises a phase-locked loop (PLL), a digitally controlled oscillator (DCO), a multiplexer, and an arithmetic module.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.

Abstract: A frequency generator is disclosed. The frequency generator is for generating an oscillator clock according to a reference clock, and the frequency generator is used in a frequency hopping system that switches a carrier frequency among a plurality of channels, and the carrier frequency further carries a modulation frequency for data transmission. The frequency generator includes: a frequency hopping and modulation control unit, arranged for generating a current channel according to a channel hopping sequence and a frequency command word (FCW) based on the reference clock, a digital-controlled oscillator (DCO), arranged for to generating the oscillator clock according to an oscillator tuning word (OTW) obtained according to the estimated DCO normalization value. An associated method is also disclosed.