Abstract: A clothing pattern making management system, applicable to a server and used and used for allowing users to connect and manage a plurality of clothing pattern making data via a network, at least includes a database and a login and authority management module, a search and viewing module, a connection and upload module, a management and download module. Through the data connection to a business system, the system is able to facilitate the users to perform data upload and management in order to achieve proper preservation and management of large quantity of pattern drawings for various styles of clothes and for all stages, and to achieve the effects of learning exchange and passing on of techniques.

Abstract: A connector device is provided, including a first housing, a circuit assembly, a second housing, and a connector. The circuit assembly is disposed on the first housing, and has a first connecting port and a second connecting port. The second housing is detachably engaged with the first housing. The connector is disposed on the second housing, and has an opening and a terminal. When the first housing is engaged with the second housing and the opening faces the first direction, the terminal is electrically connected to the first connecting port. When the first housing is engaged with the second housing and the opening faces the second direction, the terminal is electrically connected to the second connecting port. The first direction is different from the second direction.

Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Abstract: A receiver front-end circuit and an operating method thereof are disclosed. The receiver front-end circuit includes a common-mode suppression circuit and a rear-stage circuit. The common-mode suppression circuit is used to receive an external input common-mode voltage signal and perform common-mode noise suppression processing on the external input common-mode voltage signal, and then output an internal input common-mode voltage signal. The rear-stage circuit is coupled to the common-mode suppression circuit and used to receive the internal input common-mode voltage signal. The dynamic swing of the internal input common-mode voltage signal is smaller than the dynamic swing of the external input common-mode voltage signal.

Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Abstract: A nonplanar antenna embedded package structure and a method of manufacturing the same are introduced. The structure includes a nonplanar antenna component. The nonplanar antenna component comprises an antenna substrate, metal wiring, through-hole, and metal bump. The substrate surface covers the metal wiring. The through-hole penetrates the substrate from the antenna substrate bottom side but does not penetrate the metal wiring, and does not affect its appearance. The metal bump is implanted in the through-hole from the antenna substrate bottom side to join the metal wiring. An electronic component having a copper cable is provided. An end of the copper cable protrudes from the electronic component and is inserted into the through-hole of the antenna component to join the metal bump, thereby forming the nonplanar antenna embedded package structure characterized by: preventing the antenna metal wiring from exposing, and reducing interference otherwise arising from antenna resonance frequency and noise.

Abstract: An image capture method is provided for a portable communication device having a display unit, which real-time displays an image at least including an object to be shot. The method includes sensing a moving acceleration of the portable communication device based on a first gravity-sensing threshold value. A touch focus signal is received so that the portable communication device focuses on one of the objects to be the focus-lock object. Then, according to the touch focus signal, the first gravity-sensing threshold value is changed to a second gravity-sensing threshold value, which is larger than the first gravity-sensing threshold value. The image at least including the focus-lock object is captured.

Abstract: A nonplanar antenna embedded package structure and a method of manufacturing the same are introduced. The structure includes a nonplanar antenna component. The nonplanar antenna component comprises an antenna substrate, metal wiring, through-hole, and metal bump. The substrate surface covers the metal wiring. The through-hole penetrates the substrate from the antenna substrate bottom side but does not penetrate the metal wiring, and does not affect its appearance. The metal bump is implanted in the through-hole from the antenna substrate bottom side to join the metal wiring. An electronic component having a copper cable is provided. An end of the copper cable protrudes from the electronic component and is inserted into the through-hole of the antenna component to join the metal bump, thereby forming the nonplanar antenna embedded package structure characterized by: preventing the antenna metal wiring from exposing, and reducing interference otherwise arising from antenna resonance frequency and noise.

Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.

Abstract: A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.

Abstract: A multi-touch screens device includes at least two touch panels, a microprocessor, and an operation system. The microprocessor is coupled to the at least two touch panels for providing driving signals of the at least two touch panels to the at least two touch panels, receiving sensing signals generated by the at least two touch panels, and generating operation signals corresponding to the at least two touch panels according to the sensing signals. The operation system is coupled to the microprocessor for executing corresponding operations on the at least two touch panels according to the operation signals corresponding to the at least two touch panels.

Abstract: A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.

Abstract: An embedded industrial controller with a bicycle frame shape is disclosed. The embedded industrial controller includes a casing with the bicycle frame shape having an upper tube, a lower tube, a front fork, a rear lower fork, a rear upper fork and a base tube, a motherboard, a battery module, a power electrical port and a plurality of input and output electrical ports. The embedded industrial controller with a bicycle frame shape of the present invention has significantly improved functions than the conventional industrial controller, and further meets the conventional requirements such as dust proof, vibration proof, and heat dissipation.

Abstract: An image capture method is provided for a portable communication device having a display unit, which real-time displays an image at least including an object to be shot. The method includes sensing a moving acceleration of the portable communication device based on a first gravity-sensing threshold value. A touch focus signal is received so that the portable communication device focuses on one of the objects to be the focus-lock object. Then, according to the touch focus signal, the first gravity-sensing threshold value is changed to a second gravity-sensing threshold value, which is larger than the first gravity-sensing threshold value. The image at least including the focus-lock object is captured.

Abstract: A touch device and a touch sensing method thereof are provided. With driving lines and corresponding sensing lines are arranged alternately, the distance between the sensing lines is increased, so as to avoid touch quality being affected by the mutual interference caused by the sensing lines.

Abstract: An image capture method is provided for a portable communication device having a display unit, which real-time displays an image at least including an object to be shot. The method includes sensing a moving acceleration of the portable communication device based on a first gravity-sensing threshold value. A touch focus signal is received so that the portable communication device focuses on one of the objects to be the focus-lock object. Then, according to the touch focus signal, the first gravity-sensing threshold value is changed to a second gravity-sensing threshold value, which is larger than the first gravity-sensing threshold value. The image at least including the focus-lock object is captured.

Abstract: A high electron mobility GaN-based transistor structure comprises a substrate, an epitaxial GaN layer formed on the substrate, at least one ohmic contact layer formed on the epitaxial GaN layer, a metallic gate layer formed on the epitaxial GaN layer, and a diffusion barrier layer interposed between the metallic gate layer and the epitaxial GaN layer. The diffusion barrier layer hinders metallic atoms of the metallic gate layer from diffusing into the epitaxial GaN layer, whereby are improved the electric characteristics and reliability of the GaN-based transistor.

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate, a die and a medium. The substrate has an upper substrate surface. The substrate has a trench extended downward from the upper substrate surface. The trench has a side trench surface. The die is in the trench. The die has a lower die surface and a side die surface. The lower die surface is below the upper substrate surface. A part of the trench between the side trench surface and the side die surface is filled with the medium.

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.

Abstract: A method for forming a T-shaped gate is provided. The method includes providing a substrate. Then, a photoresist structure is formed over the substrate. The photoresist structure includes two development rates. Next, a mask with an opening is formed over the photoresist structure to pattern the photoresist structure. An angle exposure is applied to the photoresist structure, and the exposed photoresist structure is developed to form a T-shaped notch. A width of the T-shaped notch is gradually reduced from a top portion thereof to a bottom portion to expose a surface of the substrate. Then, a gate metal is deposited in the T-shaped notch. Thereafter, the patterned photoresist structure is removed to form the T-shaped gate.