Patents by Inventor Chia-Hua Chu

Chia-Hua Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220146909
    Abstract: Examples of control of detachable camera devices are discussed. A detachable camera device may include a camera and an illumination module. Based on user inputs provided on an apparatus to which the device is detachably coupled, the position of the camera and the intensity of light provided by the illumination module can be changed. The device may include a controller to receive the user inputs from the apparatus and control the camera and the illumination module.
    Type: Application
    Filed: July 31, 2019
    Publication date: May 12, 2022
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: Yi-Hsuan Huang, Yi-Lin Lee, Chia Hua Chu
  • Patent number: 11312623
    Abstract: The present disclosure relates to a method of forming an integrated chip structure. The method includes forming a plurality of interconnect layers within a dielectric structure over a substrate. A dielectric layer arranged along a top of the dielectric structure is patterned to define a via hole exposing an uppermost one of the plurality of interconnect layers. An extension via is formed within the via hole and one or more conductive materials are formed over the dielectric layer and the extension via. The one or more conductive materials are patterned to define a sensing electrode over and electrically coupled to the extension via. A microelectromechanical systems (MEMS) substrate is bonded to the substrate. The MEMs substrate is vertically separated from the sensing electrode.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: April 26, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chia Liu, Chia-Hua Chu, Chun-Wen Cheng, Jung-Huei Peng
  • Patent number: 11292712
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: April 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Yi-Chuan Teng, Chun-Yin Tsai, Chia-Hua Chu, Chun-Wen Cheng
  • Patent number: 11280786
    Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: March 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Allen Timothy Chang, Ching-Ray Chen, Yi-Hsien Chang, Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
  • Patent number: 11254564
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.
    Type: Grant
    Filed: April 8, 2020
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Fei-Lung Lai, Shiang-Chi Lin
  • Patent number: 11235969
    Abstract: The integrated CMOS-MEMS device includes a CMOS structure, a cap structure, and a MEMS structure. The CMOS structure, fabricated on a first substrate, includes at least one conducting layer. The cap structure, including vias passing through the cap structure, has an isolation layer deposited on its first side and has a conductive routing layer deposited on its second side. The MEMS structure is deposited between the first substrate and the cap structure. The integrated CMOS-MEMS device also includes a conductive connector that passes through one of the vias and through an opening in the isolation layer on the cap structure. The conductive connector conductively connects a conductive path in the conductive routing layer on the cap structure with the at least one conducting layer of the CMOS structure.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: February 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen Cheng Kuo, Wei-Jhih Mao
  • Patent number: 11206493
    Abstract: A micro electro mechanical system (MEMS) microphone includes a first membrane, a second membrane, a third membrane disposed between the first membrane and the second membrane, a first cavity disposed between the first membrane and the third membrane and surrounded by a first wall, a second cavity disposed between the second membrane and the third membrane and surrounded by a second wall, and one or more first supports disposed in the first cavity and connecting the first membrane and the third membrane.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: December 21, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen Hsiung Yang, Chun-Wen Cheng, Chia-Hua Chu, En-Chan Chen
  • Patent number: 11180365
    Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: November 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
  • Patent number: 11184694
    Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: November 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun-Yin Tsai, Tzu-Heng Wu, Wen-Cheng Kuo
  • Publication number: 20210336492
    Abstract: Examples of charging devices, apparatus and stations for wirelessly charging an electronic device, are described. In one example, the charging device may include a positioning mechanism coupled to power transmitter. The positioning mechanism adjusts a position of the power transmitter to change a perpendicular distance between the plane of the power transmitter and a charging surface of the charging device.
    Type: Application
    Filed: February 12, 2018
    Publication date: October 28, 2021
    Inventor: Chia Hua CHU
  • Patent number: 11148936
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jung-Huei Peng, Chia-Hua Chu, Fei-Lung Lai, Shiang-Chi Lin
  • Publication number: 20210314707
    Abstract: A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen-Tuan Lo
  • Patent number: 11089408
    Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
  • Publication number: 20210238030
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.
    Type: Application
    Filed: March 31, 2021
    Publication date: August 5, 2021
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen Cheng Kuo
  • Patent number: 11078074
    Abstract: Processes for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices are provided. In some embodiments, the MEMS devices are formed on a sacrificial substrate or wafer, the sacrificial substrate or wafer is bonded to a CMOS die or wafer, and the sacrificial substrate or wafer is removed. In other embodiments, the MEMS devices are formed over a sacrificial region of a CMOS die or wafer and the sacrificial region is subsequently removed. Integrated circuit (ICs) resulting from the processes are also provided.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: August 3, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • Patent number: 11051109
    Abstract: A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a second backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: June 29, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen-Tuan Lo
  • Publication number: 20210188627
    Abstract: Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.
    Type: Application
    Filed: March 5, 2021
    Publication date: June 24, 2021
    Inventors: Chia-Hua Chu, Chun-Wen Cheng, Wen Cheng Kuo
  • Patent number: 10968097
    Abstract: Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: April 6, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen Cheng Kuo
  • Publication number: 20210098681
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.
    Type: Application
    Filed: March 13, 2020
    Publication date: April 1, 2021
    Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
  • Publication number: 20210087052
    Abstract: A method for forming a MEMS device includes following operations. A first semiconductor layer is formed over a substrate. A plurality of first pillars are formed over the first layer. A second layer is formed over the first pillars and the first layer. A plurality of second pillars are formed over the second layer. A third layer is formed over the second pillars and the second layer.
    Type: Application
    Filed: December 7, 2020
    Publication date: March 25, 2021
    Inventors: CHEN HSIUNG YANG, CHUN-WEN CHENG, CHIA-HUA CHU, EN-CHAN CHEN