Abstract: A semiconductor device includes a substrate, a gate dielectric layer, a gate electrode, a field plate, a source electrode and a drain electrode. The gate dielectric layer is disposed on the substrate and includes a first portion having a first thickness, a second portion having a second thickness, and a third portion having a third thickness. The first, second and third thicknesses are different from each other, and the first thickness is smaller than the second and third thicknesses. The gate electrode is disposed on the first portion of the gate dielectric layer. The field plate is separated from and electrically coupled to the gate electrode, and is disposed on the second and third portions of the gate dielectric layer. The source and drain electrodes are disposed on the sides of the gate electrode and the field plate, respectively.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: An electronic device includes a base, a multi-stage sensor, a top cover, and a side cover. The multi-stage sensor is configured to sense a sensed area. The top cover includes a top-sensed element, and the top cover is detachably connected to a top side of the base, so that the top-sensed element can be selectively in or not in the sensed area. The side cover includes a side-sensed element, and the side cover is detachably adjacent to a front side of the base, so that the side-sensed element can be selectively in or not in the sensed area. In response to that only the top-sensed element is in the sensed area, the multi-stage sensor outputs a first signal. In response to that neither the top-sensed element nor the side-sensed element is in the sensed area, the multi-stage sensor outputs a second signal.

Abstract: A method for manufacturing a semiconductor structure is provided. A substrate including a fin structure is received, provided or formed. A sacrificial gate layer is formed over the fin structure and a source/drain structure is formed adjacent to the sacrificial gate layer, wherein the sacrificial gate layer is surrounded by a dielectric structure. The sacrificial gate layer is removed, wherein a recess is defined by the dielectric structure. A work function layer is formed in the recess, wherein the work function layer includes an overhang portion at an opening of the recess. A thickness of the work function layer is reduced. A glue layer is formed over the work function layer. A semiconductor structure thereof is also provided.

Abstract: A method, a communication apparatus using the method, and a base station apparatus are disclosed. The method includes arranging user equipment to receive a downlink control channel signal associated with a physical downlink control channel; and configuring the user equipment to monitor the physical downlink control channel for control-resource set information. The control-resource set information corresponds to time and frequency resource allocation information related to the physical downlink control channel. The control-resource set information includes at least one parameter.

Abstract: A semiconductor device includes a bridge and a first integrated circuit. The bridge is free of active devices and includes a first conductive connector. The first integrated circuit includes a substrate and a second conductive connector disposed in a first dielectric layer over the substrate. The second conductive connector is directly bonded to the first conductive connector. The second conductive connector includes conductive pads and first conductive vias and a second conductive via between the conductive pads. The second conductive via is not overlapped with the first conductive vias while the first conductive vias are overlapped with one another. A vertical distance between the second conductive via and the first conductive connector is larger than a vertical distance between each of the first conductive vias and the first conductive connector, and a sidewall of the first dielectric layer is substantially flush with a sidewall of the substrate.

Abstract: A pharmaceutical composition containing a mixed polymeric micelle and a drug enclosed in the micelle, in which the mixed polymeric micelle, 1 to 1000 nm in size, includes an amphiphilic block copolymer and a lipopolymer. Also disclosed are preparation of the pharmaceutical composition and use thereof for treating cancer.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A wireless communication method and apparatus for handling radio resource collision are provided. The wireless communication method includes receiving a Radio Resource Control (RRC) configuration indicating a first Control Resource Set (CORESET) pool index associated with a Physical Uplink Control Channel (PUCCH) designated to carry Uplink Control Information (UCI); determining whether the PUCCH overlaps one or more Physical Uplink Shared Channels (PUSCHs) in time domain; after determining that the PUCCH overlaps at least one of the one or more PUSCHs in the time domain, multiplexing the UCI on a particular PUSCH of the one or more PUSCHs that is associated with the first CORESET pool index; and transmitting the UCI via the particular PUSCH.

Abstract: A security lock has a fixing element and at least one hook. The fixing element is mounted in a security slot of an electronic device. The hook is capable of moving axially with respect to the fixing element, and the hook moves radially outward along a guiding structure of the fixing element to engage with the security slot, the fixing element stays static, i.e., without moving and rotating as the hook is moving. Therefore, the security lock won't press the security slot, and further prevents damage to the security slot caused by frequently or constantly loaded with the security lock. Furthermore, without moving and rotating in a mounting process of the security lock, the fixing element holds the hook to steadily engage with the security slot, and thus an overall anti-pulling and anti-pushing performances are enhanced.

Abstract: A display includes an outer frame, a supporting frame, a display module, and a covering member. The supporting frame is accommodated in the outer frame. The display module is disposed on a supporting member of the supporting frame. The supporting member extends toward a display region of the display module from the supporting frame. On a first surface of the display module, a projection area of the supporting member and a projection area of an first optical film of the display module are partially overlapped with each other. A third surface of the covering member is closely attached to a second optical film of the display module. The covering member has an extension portion. The extension portion extends from a fourth surface opposite to the third surface toward a direction away from the third surface, and the extension portion is coplanar with the outer side surface of the outer frame.

Abstract: A keyboard and a key structure capable of displaying instant image thereof are provided. The key structure includes a display unit, a circuit membrane, an elastic member, a key seat, a first supporting frame, a second supporting frame, and a translucent keycap. The first supporting frame has two first arms and two axle portions. The ends of the first arms are slidably disposed on an accommodation portion of the key seat. The second supporting frame has two second arms and two linking holes. The ends of the second arms are pivotally connected to the accommodation portion. The linking hole is elongated-shaped. When the translucent keycap is not pressed, the axle portion abuts against one hole-end of the linking hole. When the translucent keycap is pressed, the axle portion abuts against another one hole-end of the linking hole.

Abstract: A monitoring system and a monitoring method of network latency are provided. The monitoring method includes: making a server communicatively connect to a first host and a second host, wherein the first host provides a first virtual machine operating a first application and the second host provides a second virtual machine operating a second application; and calculating, by the server, time latency information associated with a communication between the first application and the second application according to data obtained from the first host and the second host, and displaying the time latency information through a visual interface, wherein the time latency information includes a total latency of the communication between the first application and the second application.

Abstract: A method performed by a user equipment for a beam operation is provided. The method includes: receiving an RRC configuration for configuring a set of joint TCI states; receiving, from the BS, a MAC CE for activating a subset of joint TCI states in the set of joint TCI states, the MAC CE is used to map the subset of joint TCI states to codepoints of a TCI field in DCI; receiving the DCI indicating a joint TCI state included in the subset of joint TCI states activated by the MAC CE; determining whether the DCI includes a DL assignment; transmitting, in response to reception of the DCI, first HARQ-ACK information in a case that the DCI does not include the DL assignment; and transmitting, in response to the reception of the DCI and reception of a PDSCH, second HARQ-ACK information in a case that the DCI includes the DL assignment.

Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes depositing an etch stop layer on a cobalt contact disposed on a substrate, depositing a dielectric on the etch stop layer, etching the dielectric and the etch stop layer to form an opening that exposes a top surface of the cobalt contact, and etching the exposed top surface of the cobalt contact to form a recess in the cobalt contact extending laterally under the etch stop layer. The method further includes depositing a ruthenium metal to substantially fill the recess and the opening, and annealing the ruthenium metal to form an oxide layer between the ruthenium metal and the dielectric.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A respiratory function testing system includes an air transforming device, a sound reception device and an operation device. The air transforming device is configured to collect exhaled and/or inhaled air for a predetermined period and generate a wide frequency range sound signal according to the collected respired air. The wide frequency range sound signal at least contains an ultrasonic signal. The sound reception device is configured to receive and record the wide frequency range sound signal as an audio file. The operation device is in communication with the sound reception device and is configured to receive and compute the audio file to generate a respiratory function parameter. Besides, the recorded wide frequency range sound signal may be converted into a spectrogram for further applications, and the computation of the audio file can be replaced by analyzing the spectrogram. A respiratory function testing method corresponding to the respiratory function testing system is also provided.

Abstract: Provided are a liquid crystal polymer film (LCP film) and a laminate comprising the same. The LCP film has a first surface and a second surface opposite each other, and the first surface has an arithmetical mean height of a surface (Sa) less than 0.32 ?m. The LCP film with proper Sa is suitable to be stacked with a metal foil, such that a laminate comprising the LCP film can have an advantage of low insertion loss.