Abstract: The present disclosure provides an operating method of an automatic analysis system on magnetic resonance imaging (MRI), which includes steps as follows. Images are received from of the subject's brain from the MRI machine. Contrast-enhanced T1-weighted images and T2-weighted images are obtained from the images, and the pre-processing is performed on the images. The ratio of T2-weighted images to contrast-enhanced T1-weighted images is calculated to generate contrast-enhanced images. The unsupervised clustering is performed on the region of interest in the contrast-enhanced image to separate a cystic part and a non-cystic part so as to calculate the feature parameters. After radiosurgery is performed on the brain tumor corresponding to the region of interest, the volume change of the tumor is analyzed. The linear regression analysis of the feature parameters and the volume change of the tumor is performed for prognostic evaluation.

Abstract: Described herein is an etching solution suitable for the selective removal of polysilicon over silicon oxide from a microelectronic device, which comprises: water; at least one of a quaternary ammonium hydroxide compound; optionally at least one alkanolamine compound; a water-miscible solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, a polyamine, a nitrogen-containing heterocyclic compound, a nitrogen-containing aromatic compound, or a nitrogen-containing heterocyclic and aromatic compound; and optionally, a surfactant.

Abstract: A system for analyzing brain tissue components based on magnetic resonance image. The system includes a memory and a processor. The memory stores instructions. The processor accesses and executes the instructions to perform the following: extracting maps of tissue from a brain magnetic resonance imaging (MRI) corresponding to normal subjects; averaging the maps of tissue according to a number of the normal subjects to generate reference maps that correspond to different tissues; receiving a brain MRI sample having a targeted region; and analyzing the brain MRI sample based on the reference maps and the targeted region to generate an analysis result, in which the analysis result indicates a ratio of tissues in the targeted region of the brain MRI sample.

Abstract: Stripping solutions that may replace an etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes and/or packaging/bumping applications on semiconductor devices for semiconductor integrated circuits with good photoresist removal efficiency and with low silicon oxide etch rate and low metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain polar aprotic solvent, water, hydroxylamine, corrosion inhibitor, quaternary ammonium hydroxide and optional surfactant. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: A sheet size detecting mechanism includes a sheet guiding module, a sensing module and a control unit. The sensing module includes a contact element and a circuit board. The circuit board includes a first conducting part, a second conducting part and plural fixed resistors. The first conducting part includes plural conductive segments. The plural conductive segments are connected with the corresponding fixed resistors, respectively. While the sheet guiding module is moved relative to the sheet input tray, the contact element is moved with the sheet guiding module. When the electric connection between a first conductive segment and the second conducting part is established through the contact element, the corresponding fixed resistor provides a resistance value, and the circuit board issues a sensing signal according to the resistance value. The control unit acquires the size of the paper sheet according to the sensing signal.

Abstract: A method for localizing an intracranial electrode in a subject's brain is provided. The intracranial electrode has at least one electrode contact. The method includes: acquiring a first brain image reconstructed from first image data acquired after electrode-implantation; acquiring a second brain image reconstructed from second image data acquired before the electrode-implantation; co-registering the first brain image and the second brain image to acquire spatial transformation parameters; extracting a first coordinate of the electrode contact from the first brain image; converting the first coordinate into a second coordinate in the second brain image by using the spatial transformation parameters; co-registering the second brain image and a universal brain atlas to define functional zones in the second brain image; and defining a corresponding functional zone where the second coordinate is located. Another alternative method and a system for localizing an intracranial electrode are also provided herein.

Abstract: A bouncing shoe-holder includes a shoe holder for holding a shoe worn by a user, a bouncing unit and a fastening unit. The bouncing unit includes an upper resilient member having a downward curving configuration and a lower resilient member having an upward curving configuration coupled thereto in an end-to-end manner to define a bouncing cavity therebetween. The fastening unit includes a fastening member supported within the bouncing cavity to directly fasten the bouncing unit at a bottom side of the shoe holder.

Abstract: A benign tumor development trend assessment system includes an image outputting device and a server computing device. The image outputting device outputs first/second images captured from the same position in a benign tumor. The server computing device includes an image receiving module, an image pre-processing module, a target extracting module, a feature extracting module and a trend analyzing module. The image receiving module receives the first/second images. The image pre-processing module pre-processes the first/second images to obtain first/second local images. The target extracting module automatically detects and delineates tumor regions from the first/second local images to obtain first/second region of interest (ROI) images. The feature extracting module automatically identifies the first/second ROI images to obtain at least one first/second features. The trend analyzing module analyzes the first/second features to obtain a tumor development trend result.

Abstract: A microelectronic device (semiconductor substrate) cleaning composition is provided that comprises water; oxalic acid, and two or more corrosion inhibitors and methods of using the same.

Abstract: A method for localizing an intracranial electrode in a subject's brain is provided. The intracranial electrode has at least one electrode contact. The method includes: acquiring a first brain image reconstructed from first image data acquired after electrode-implantation; acquiring a second brain image reconstructed from second image data acquired before the electrode-implantation; co-registering the first brain image and the second brain image to acquire spatial transformation parameters; extracting a first coordinate of the electrode contact from the first brain image; converting the first coordinate into a second coordinate in the second brain image by using the spatial transformation parameters; co-registering the second brain image and a universal brain atlas to define functional zones in the second brain image; and defining a corresponding functional zone where the second coordinate is located. Another alternative method and a system for localizing an intracranial electrode are also provided herein.

Abstract: In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT device can also include a first mesa defined by a first sidewall of the trench and in parallel with the trench and a second mesa defined by a second sidewall of the trench and in parallel with the trench. The first mesa can include at least one active segment of the IGBT device and the second mesa can include at least one inactive segment of the IGBT device.

Abstract: Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

Abstract: A sheet size detecting mechanism includes a sheet guiding module, a sensing module and a control unit. The sensing module includes a contact element and a circuit board. The circuit board includes a first conducting part, a second conducting part and plural fixed resistors. The first conducting part includes plural conductive segments. The plural conductive segments are connected with the corresponding fixed resistors, respectively. While the sheet guiding module is moved relative to the sheet input tray, the contact element is moved with the sheet guiding module. When the electric connection between a first conductive segment and the second conducting part is established through the contact element, the corresponding fixed resistor provides a resistance value, and the circuit board issues a sensing signal according to the resistance value. The control unit acquires the size of the paper sheet according to the sensing signal.

Abstract: Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.

Abstract: A pipelined processor for carrying out pipeline processing of instructions, which undergo a plurality of stages, is provided. The pipelined processor includes: a memory-activation indicator and a memory controller. The memory-activation indicator stores content information that indicates whether to activate a first volatile memory and/or a second volatile memory while performing a current instruction. The memory controller is arranged for controlling activation of the first volatile memory and/or the second volatile memory in a specific stage of the plurality of stages of the current instruction according to the content information stored in the memory-activation indicator.

Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.

Abstract: Described herein is an aqueous composition for treating a substrate including patterns having line-space dimensions of 50 nm or below to prevent collapse of the patters, the composition comprising: a solvent system comprising water and a water-miscible organic solvent; a surface modifier that is a reaction product between an alkylamine and an organic acid; and an optional pH adjusting agent.

Abstract: Etching compositions suitable for the selective removal of silicon over silicon-germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal.

Abstract: Described herein is an etching solution comprising water; an oxidizer; a water-miscible organic solvent; a fluoride ion source; a corrosion inhibitor and optionally, a surfactant, optionally a buffer, optionally a chelating agent. Such compositions are useful for the selective removal of silicon-germanium over germanium from a microelectronic device having such material(s) thereon during its manufacture.