Patents by Inventor Chia-Ling Chan
Chia-Ling Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10714619Abstract: A method for fabricating a semiconductor device includes forming a doped semiconductor layer on a substrate and forming a fin structure disposed on the doped semiconductor layer. The fin structure is doped with a p-type dopant. The method further includes forming a source/drain region within an upper portion of the fin structure and forming a fin sidewall along a lower portion of the fin structure. The fin sidewall has the p-type dopant.Type: GrantFiled: July 26, 2018Date of Patent: July 14, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Wei-Yang Lee, Chia-Chun Lan, Chia-Ling Chan, Feng-Cheng Yang, Yen-Ming Chen
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Patent number: 10700197Abstract: In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer layer over the semiconductor fin; after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps; removing the dopant layer; and performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.Type: GrantFiled: November 17, 2017Date of Patent: June 30, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Ling Chan, Meng-Yueh Liu, Wei-Ken Lin
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Patent number: 10665697Abstract: In an embodiment, a device includes: a fin on a substrate, fin having a Si portion proximate the substrate and a SiGe portion distal the substrate; a gate stack over a channel region of the fin; a source/drain region adjacent the gate stack; a first doped region in the SiGe portion of the fin, the first doped region disposed between the channel region and the source/drain region, the first doped region having a uniform concentration of a dopant; and a second doped region in the SiGe portion of the fin, the second doped region disposed under the source/drain region, the second doped region having a graded concentration of the dopant increasing in a direction extending from a top of the fin to a bottom of the fin.Type: GrantFiled: June 15, 2018Date of Patent: May 26, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Ling Chan, Liang-Yin Chen, Wei-Ting Chien
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Publication number: 20200135894Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.Type: ApplicationFiled: December 23, 2019Publication date: April 30, 2020Inventors: Chia-Ling Chan, Derek Chen, Liang-Yin Chen, Chien-I Kuo
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Patent number: 10629494Abstract: A method includes forming a spacer layer over a semiconductor fin protruding above a substrate, doping the spacer layer using a first dopant while the spacer layer covers source/drain regions of the semiconductor fin, and performing a thermal anneal process after the doping.Type: GrantFiled: June 26, 2017Date of Patent: April 21, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Ling Chan, Yen-Chun Lin
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Patent number: 10566242Abstract: A plasma doping process provides conformal doping profiles for lightly doped source/drain regions in fins, and reduces the plasma doping induced fin height loss. The plasma doping process overcomes the limitations caused by traditional plasma doping processes in fin structures that feature aggressive aspect ratios and tights pitches. Semiconductor devices with conformal lightly doped S/D regions and reduced fin height loss demonstrate reduced parallel resistance (Rp) and improved transistor performance.Type: GrantFiled: December 13, 2016Date of Patent: February 18, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Ling Chan, Tsan-Chun Wang, Liang-Yin Chen, Huicheng Chang
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Patent number: 10522656Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.Type: GrantFiled: February 28, 2018Date of Patent: December 31, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Chia-Ling Chan, Derek Chen, Liang-Yin Chen, Chien-I Kuo
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Publication number: 20190386118Abstract: In an embodiment, a device includes: a fin on a substrate, fin having a Si portion proximate the substrate and a SiGe portion distal the substrate; a gate stack over a channel region of the fin; a source/drain region adjacent the gate stack; a first doped region in the SiGe portion of the fin, the first doped region disposed between the channel region and the source/drain region, the first doped region having a uniform concentration of a dopant; and a second doped region in the SiGe portion of the fin, the second doped region disposed under the source/drain region, the second doped region having a graded concentration of the dopant increasing in a direction extending from a top of the fin to a bottom of the fin.Type: ApplicationFiled: June 15, 2018Publication date: December 19, 2019Inventors: Chia-Ling Chan, Liang-Yin Chen, Wei-Ting Chien
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Publication number: 20190355816Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.Type: ApplicationFiled: August 5, 2019Publication date: November 21, 2019Inventors: Chien-I Kuo, Shao-Fu Fu, Chia-Ling Chan, Yi-Fang Pai, Li-Li Su, Wei Hao Lu, Wei Te Chiang, Chii-Horng Li
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Publication number: 20190267471Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.Type: ApplicationFiled: February 28, 2018Publication date: August 29, 2019Inventors: Chia-Ling Chan, Derek Chen, Liang-Yin Chen, Chien-I Kuo
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Patent number: 10374038Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.Type: GrantFiled: March 15, 2018Date of Patent: August 6, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-I Kuo, Chii-Horng Li, Chia-Ling Chan, Li-Li Su, Yi-Fang Pai, Wei Te Chiang, Shao-Fu Fu, Wei Hao Lu
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Patent number: 10326003Abstract: A finFET device and methods of forming a finFET device are provided. The method includes forming a first gate spacer is formed over a dummy gate of a fin field effect transistor (finFET). The method also includes performing a carbon plasma doping of the first gate spacer. The method also includes forming a plurality of source/drain regions, where a source/drain region is disposed on opposite sides of the dummy gate. The method also includes removing dummy gate.Type: GrantFiled: March 29, 2017Date of Patent: June 18, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Cheng Chen, Huicheng Chang, Liang-Yin Chen, Chun-Feng Nieh, Li-Ting Wang, Wan-Yi Kao, Chia-Ling Chan
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Publication number: 20190165100Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.Type: ApplicationFiled: March 15, 2018Publication date: May 30, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-I KUO, Chii-Horng LI, Chia-Ling CHAN, Li-Li SU, Yi-Fang PAI, Wei Te CHIANG, Shao-Fu FU, Wei Hao LU
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Publication number: 20190103491Abstract: In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer layer over the semiconductor fin; after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps; removing the dopant layer; and performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.Type: ApplicationFiled: November 17, 2017Publication date: April 4, 2019Inventors: Chia-Ling Chan, Meng-Yueh Liu, Wei-Ken Lin
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Publication number: 20190103487Abstract: A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, forming a first spacer over the dummy gate structure, implanting a first dopant in the fin to form a doped region of the fin adjacent the first spacer, removing the doped region of the fin to form a first recess, wherein the first recess is self-aligned to the doped region, and epitaxially growing a source/drain region in the first recess.Type: ApplicationFiled: September 5, 2018Publication date: April 4, 2019Inventors: Chia-Ling Chan, Yen-Chun Lin
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Publication number: 20190027473Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a gate structure and a source/drain feature. The gate structure is positioned over a fin structure. The source/drain feature is positioned adjacent to the gate structure. A portion of the source/drain feature embedded in the fin structure has an upper sidewall portion adjacent to a top surface of the fin structure and a lower sidewall portion below the upper sidewall portion. A first curve radius of the upper sidewall portion is different from a second curve radius of the lower sidewall portion in a cross-sectional view substantially along the longitudinal direction of the fin structure.Type: ApplicationFiled: July 18, 2017Publication date: January 24, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Cheng CHEN, Chia-Ling CHAN, Liang-Yin CHEN, Huicheng CHANG
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Publication number: 20190019892Abstract: A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Inventors: Wei-Yang Lo, Tung-Wen Cheng, Chia-Ling Chan, Mu-Tsang Lin
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Publication number: 20180374760Abstract: A method includes forming a spacer layer over a semiconductor fin protruding above a substrate, doping the spacer layer using a first dopant while the spacer layer covers source/drain regions of the semiconductor fin, and performing a thermal anneal process after the doping.Type: ApplicationFiled: June 26, 2017Publication date: December 27, 2018Inventors: Chia-Ling Chan, Yen-Chun Lin
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Publication number: 20180337282Abstract: A method for fabricating a semiconductor device includes forming a doped semiconductor layer on a substrate and forming a fin structure disposed on the doped semiconductor layer. The fin structure is doped with a p-type dopant. The method further includes forming a source/drain region within an upper portion of the fin structure and forming a fin sidewall along a lower portion of the fin structure. The fin sidewall has the p-type dopant.Type: ApplicationFiled: July 26, 2018Publication date: November 22, 2018Inventors: Wei-Yang Lee, Chia-Chun Lan, Chia-Ling Chan, Feng-Cheng Yang, Yen-Ming Chen
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Patent number: 10134902Abstract: A system is configured to perform plasma related fabrication processes. The system includes a process chamber and a wafer stage positioned within the process chamber. The wafer stage is configured to secure a process wafer. The system further includes a bottom electrode positioned beneath the wafer stage, a top electrode positioned external to the chamber, and a plasma distribution mechanism. The plasma distribution mechanism is reconfigurable to allow for more than one plasma distribution profile.Type: GrantFiled: March 15, 2017Date of Patent: November 20, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Yang Lee, Chia-Chun Lan, Chia-Ling Chan, Feng-Cheng Yang, Yen-Ming Chen