Abstract: A stack structure of a carrier board embedded with semiconductor components and a method for fabricating the same are proposed. The stack structure includes first and second carrier boards having a through hole respectively, first and second semiconductors component disposed in through holes of the first and second semiconductor components respectively, and a dielectric layer structure clamped between the first carrier board and the second carrier board and having a first dielectric layer formed on the first carrier board and an inactive surface of the first semiconductor component and filled in gaps between the first carrier board and the first semiconductor component, a second dielectric layer formed on the second carrier board and an inactive of the second semiconductor component and filled in gaps between the second carrier board and the second semiconductor component, and a bonding layer clamped between the first dielectric layer and the second dielectric layer.

Abstract: A stack structure of carrier boards embedded with semiconductor components and a method for fabricating the same are proposed. A first carrier board and a second carrier board, each of which having at least one through hole, are provided. A first protecting layer and a second protecting layer are formed on a surface of the first and second carrier boards respectively. At least one first semiconductor component and at least one second semiconductor component are disposed on the first and second protecting layers and accommodated in the first and second through holes respectively. A dielectric layer is laminated between the surfaces of the first and second carrier boards without the protecting layers formed thereon. Thus, a modularized package structure with reduced space waste is formed.

Abstract: A bandgap reference circuit includes an input circuit having a first FET, a second FET, and a first resistor, wherein a first node is connected to the first FET having a first threshold voltage, the first resistor is connected between a second node and the second FET having a second threshold voltage; a mirroring circuit for controlling two output currents respectively derived from the first and second nodes, and maintaining the two output currents to a specific current ratio; and an operation amplifier connected to the first node, the second node of the input circuit, and the mirroring circuit, for controlling two voltages respectively at the first and second nodes of the input circuit to a specific voltage ratio; wherein the first FET and the second FET are both operating in the subthreshold region, the first threshold voltage is larger than the second threshold voltage, and the two output currents are independent of temperature.

Abstract: A bandgap reference circuit includes a PTAT current generating circuit for generating a PTAT current; a CTAT circuit generating circuit for generating a CTAT current; a node for receiving the PTAT current and the CTAT current; and, a first resistor connected between the node and a ground, wherein a reference voltage is derived from the first resistor when a superposed current of the PTAT current and the CTAT current is flowing through the first resistor.

Abstract: A shallow trench isolation (STI) structure has a top portion tapering in width from wide to narrow in a direction from a substrate surface, from a first width at a top of the first portion to a second width at a bottom of the first portion. The STI structure also includes a bottom portion below the top portion, which expands from the bottom of the top portion to a substantially widened lateral distance having a third width. The third width is, in general, substantially larger than the second width. The inventive STI structure can provide desired isolation characteristics with a significantly reduced aspect ratio, thus suitable for device isolations in advanced processing technology.

Abstract: A circuit board and a method for fabricating the same are provided. The circuit board includes a core board, a first bonding layer disposed on the core board, and a first wiring layer disposed on the first bonding layer. The first bonding layer enables the first wiring layer to be bonded to the core layer better, thereby preventing delamination and forming a fine-pitch wiring layer.

Abstract: A data weighted average (DWA) structure including a first delay unit, a binary to thermometer code converter, an adder, a second delay unit, a decoder, a barrel shifter, and a plurality of signal lines is provided. The first delay unit delays an input digital signal. The binary to thermometer code converter converts an output signal of the first delay unit into a thermal code. The second delay unit delays an output signal of the adder. The adder adds the input digital signal to an output signal of the second delay unit. The decoder decodes the output signal of the second delay unit. The barrel shifter generates an output signal from the thermal code in accordance with an output signal of the decoder. The signal lines route the output signal of the barrel shifter into two independent control signal groups.

Abstract: A data weighted average (DWA) structure including a first delay unit, a binary to thermometer code converter, an adder, a second delay unit, a decoder, a barrel shifter, and a plurality of signal lines is provided. The first delay unit delays an input digital signal. The binary to thermometer code converter converts an output signal of the first delay unit into a thermal code. The second delay unit delays an output signal of the adder. The adder adds the input digital signal to an output signal of the second delay unit. The decoder decodes the output signal of the second delay unit. The barrel shifter generates an output signal from the thermal code in accordance with an output signal of the decoder. The signal lines route the output signal of the barrel shifter into two independent control signal groups.

Abstract: A multi-chip semiconductor package structure is disclosed, including a carrier board having a first and an opposing second surfaces and formed with at least an opening penetrating the first and second surfaces, wherein a plurality of electrically connecting pads are formed on the first and second surfaces of the carrier board, respectively; a semiconductor component disposed in the opening, the semiconductor component having a first and a second active surfaces each with a plurality of electrode pads being formed thereon; a third semiconductor chip having an active surface and an inactive surface, the active surface having a plurality of electrode pads formed thereon for electrically connecting with the electrically connecting pads on the first surface of the carrier board and the electrode pads on the first active surface of the semiconductor component; and a fourth semiconductor chip having an active surface and an inactive surface, the active surface having a plurality of electrode pads formed thereon for

Abstract: A multi-chip semiconductor package structure is disclosed according to the present invention.

Abstract: A multi-chip semiconductor package structure is disclosed according to the present invention, the package structure includes: a carrier board having a first surface, a second surface, and at least an opening penetrating the first and second surfaces, the first and second surfaces each having electrically connecting pads; a semiconductor component received in the opening, the semiconductor component has a first active surface and a second active surface, and each of the first and second active surfaces has a plurality of electrode pads; a plurality of first conductive elements electrically connected to the electrically connecting pads of the first and second surfaces of the carrier board with the electrode pads of the first and second active surfaces of the semiconductor component; and a molding material formed on a portion of the first surface of the carrier board, the first active surface of the semiconductor component, a portion of the second surface of the carrier board, and the second active surface of th

Abstract: A chip package module is disclosed, which comprises a core plate and two rigid plates individually having a circuit layer. The core plate is sandwiched in between the two rigid plates to form a composite circuit board. Furthermore, the two rigid plates individually have a cavity to expose the surface of the core plate. In addition, the cavities individually have at least one chip disposed therein, and each chip electrically connects to the composite circuit board. The present invention reduces the height of the package module and makes the package module lighter and smaller.

Abstract: A package structure with chip embedded therein is disclosed, which comprises a circuit board having a first surface, an opposite second surface and a through cavity penetrating the circuit board, wherein the first surface of the circuit board has a plurality of first conductive pads and a plurality of wire bonding pads disposed thereon, and the second surface of the circuit board has a plurality of second conductive pads disposed thereon; and a chip embedded in the through cavity of the circuit board, wherein the gap between the through cavity and the chip is filled with a filling material, the chip has an active surface with a plurality of electrode pads and an inactive surface, and the electrode pads electrically connect to the wire bonding pads of the circuit board by a plurality of metal lines. The present invention further provides a package module using the aforementioned package structure.

Abstract: A controllable delay line includes an anti-jitter unit, a dependent current source, a first current mirror, a second current mirror, a regulation capacitor, a compensation capacitor and an output buffer unit. The anti-jitter unit receives a first bias voltage and produces a second bias voltage based on the first bias voltage. When the voltage source used in the controllable delay line has a variation, the second bias voltage varies therewith. The regulation capacitor is used for reducing the variation of the voltage difference between the voltage source and a node voltage of the first current source. The compensation capacitor is used for reducing the influence of a transition of the input signal of the output buffer unit on the node voltage, so as to lower the jitter amount of the output signal of the output buffer unit.

Abstract: An automatic leveling device is provided, which is disposed in an electronic device for adjusting the level of the electronic device. The automatic leveling device includes a liquid level gauge filled with a liquid and a bubble, a bubble position detection module for detecting a relative position of the bubble in the liquid level gauge, a control unit electrically connected to the bubble position detection module for receiving a bubble position signal from the bubble position detection module and outputting a leveling signal, and a drive unit electrically connected to the control unit for receiving the leveling signal from the control unit, thereby adjusting the electronic device to be at a level state.

Abstract: A bottle allowing connection in series includes a bottle body having a mouth, a receiving section connected to and extended into an open bottom of the bottle body, and a passively movable opening device mounted in an upper portion of the receiving section and forward movable by a force applied thereto. A first bottle body may be serially connected at the mouth to the receiving section at the bottom of a second bottle body. When the first bottle body is turned relative to the second bottle body, the opening device in the receiving section of the second bottle body is moved forward to open a sealed top of the receiving section, allowing liquid contents in the two bottle bodies to be conveniently mixed without the need of a third container.

Abstract: A carrier structure for a semiconductor chip and a method for manufacturing the same are disclosed. The method includes the following steps: providing a carrier board having at least one through cavity, wherein a removable film is formed on the surface of the carrier board, and a semiconductor chip is temporarily fixed in the through cavity by the removable film; filling the gap between the through cavity of the carrier board and the semiconductor chip with an adhesive material in order to fix the semiconductor chip; and removing the removable film. The disclosed method can reduce the alignment error resulted from the tiny shift of the semiconductor chip caused by jitters before the semiconductor is fixed in the cavity, thereby to increase the accuracy of the alignment, to facilitate fine wiring, and to meet the trend toward compact size of semiconductor packages.

Abstract: A horse-used protective mask including at least one mask composed of symmetrical thermoplastic meshworks and having a configuration adapted to a horse's face for shielding the horse's face. A first connecting section is disposed on a corner of the lower portion of the mask. A second connecting section is disposed on another corner of the lower portion of the mask. The first connecting section can be wound around the chin of a horse to connect with the second connecting section. At least one outward swelling section is formed on the mask near the eyes of the horse. When the mask is fixed on the face of the horse, the inner face of the mask will not touch or abrade the eyes of the horse. In addition, the swelling section is held by small crimped sections away from the eyes of the horse so that the eyesight of the horse will not be obstructed.

Abstract: A circuit board assembly having at least a passive component and a stack structure of the circuit board are disclosed, including: a carrier board formed with a through opening for receiving a semiconductor component having an active surface on which electrode pads are formed; a dielectric layer formed on the carrier board and the semiconductor component and formed with openings to expose the electrode pads; a circuit layer formed on the dielectric layer and having conductive structures formed in the openings of the dielectric layer for electrically connecting the electrode pads, and a plurality of lands for mounting at least one passive component electrically connected to the circuit layer; and a circuit build-up structure formed on the dielectric layer, the circuit layer and the passive component, with conductive structures formed for electrically connecting the circuit layer.