Abstract: Capacitor cells are provided. A first PMOS transistor is coupled between a power supply and a first node, and has a gate directly connected to a second node. A first NMOS transistor is coupled between a ground and the second node, and has a gate directly connected to the first node. A second PMOS transistor is coupled between the second node and the power supply, and has a gate directly connected to the second node. A second NMOS transistor is coupled between the first node and the ground, and has a gate directly connected to the first node. Sources of the first and second NMOS transistors share an N+ doped region in the P-type well region. The first NMOS transistor is disposed between the second NMOS transistor and the first and second PMOS transistors. Source of the first PMOS transistor is directly connected to the power supply.

Abstract: An integrated circuit (IC) device includes a substrate having a front side, a back side below the front side, and first functional circuitry and a first electrostatic discharge (ESD) clamp circuit on the front side of the substrate. The IC device further includes a first connection tower that extends below the back side of the substrate and is connected to an input/output pad below the back side of the substrate, and one or more first front side conductors and one or more first front side vias which connect the first buried connection tower to the first functional circuitry and to the first ESD clamp circuit.

Abstract: A processor, an operation method, and a load-store device are provided. The processor is adapted to access a memory. The processor includes a vector register file (VRF) and the load-store device. The load-store device is coupled to the VRF. The load-store device performs a strided operation on the memory. In a current iteration of the strided operation, the load-store device reads a plurality of first data elements at a plurality of discrete addresses in the memory and writes the first data elements into the VRF, or the load-store device reads a plurality of second data elements from the VRF and writes the second data elements into a plurality of discrete addresses in the memory during the current iteration of the strided operation.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate, a first connection tower, and one or more first front side conductors and one or more first front side metal vias. The semiconductor substrate includes a first semiconductor substrate segment having first functional circuitry and a second semiconductor substrate segment having a first electrostatic discharge (ESD) clamp circuit. The first connection tower connects to an input/output pad. The one or more first front side conductors and one or more first front side metal vias connect the first buried connection tower to the first functional circuitry in the first semiconductor substrate segment and to the first ESD clamp circuit in the second semiconductor substrate segment.

Abstract: In an embodiment, a method includes: depositing a gate dielectric layer on a first fin and a second fin, the first fin and the second fin extending away from a substrate in a first direction, a distance between the first fin and the second fin decreasing along the first direction; depositing a sacrificial layer on the gate dielectric layer by exposing the gate dielectric layer to a self-limiting source precursor and a self-reacting source precursor, the self-limiting source precursor reacting to form an initial layer of a material of the sacrificial layer, the self-reacting source precursor reacting to form a main layer of the material of the sacrificial layer; annealing the gate dielectric layer while the sacrificial layer covers the gate dielectric layer; after annealing the gate dielectric layer, removing the sacrificial layer; and after removing the sacrificial layer, forming a gate electrode layer on the gate dielectric layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first n-type transistor having a first threshold voltage and including a first gate dielectric layer, and a second n-type transistor having a second threshold voltage and including a second gate dielectric layer. The first threshold voltage is lower than the second threshold. Each of the first gate dielectric layer and the second gate dielectric layer contains fluorine and hafnium. The first gate dielectric layer has a first average fluorine concentration and a first average hafnium concentration. The second gate dielectric layer has a second average fluorine concentration and a second average hafnium concentration. A first ratio of the first average fluorine concentration to the first average hafnium concentration is greater than and a second ratio of the second average fluorine concentration to the second average hafnium concentration.

Abstract: A semiconductor device includes a semiconductor substrate having a first protected circuit; a first guard ring; and a second guard ring adjacent to the first guard ring and around the first protected circuit. The second guard ring includes a first via tower configured to provide a first reference voltage; a second via tower configured to provide a second reference voltage different than the first reference voltage; and at least a third via tower configured to provide the first reference voltage.

Abstract: A method of fabricating a semiconductor device includes forming a semiconductor substrate having a first protected circuit, and forming a first guard ring around the first protected circuit including: forming a first wall configured to provide a first reference voltage; and forming a second wall configured to provide a second reference voltage different than the first reference voltage.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. When the first transistor is turned on by a detection signal, the first transistor is turned off.

Abstract: A vector processor performing a vector reduction method and an element reduction method with the same circuit structure is provided. The vector processor includes a vector register file and a first lane. The first lane loads a first operand and a second operand based on a first state parameter and performs a first reduction operation on the first operand and the second operand to generate a first reduction result. The first lane performs a second reduction operation on the first and second parts of the first reduction result based on a second state parameter to generate a second reduction result.

Abstract: Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.

Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.

Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

Abstract: A method of cutting fins includes the following steps. A photomask including a snake-shape pattern is provided. A photoresist layer is formed over fins on a substrate. A photoresist pattern in the photoresist layer corresponding to the snake-shape pattern is formed by exposing and developing. The fins are cut by transferring the photoresist pattern and etching cut parts of the fins.

Abstract: A vector processor with a vector reduction method and an element reduction method is provided. The vector processor includes a vector register file and first and second lanes. In the vector reduction method, the first lane loads a first operand and a first part of a second operand based on a first state parameter and performs a first reduction operation on the first operand and the first part of the second operand to generate a first part of a first reduction result. The second lane loads a second part of the second operand based on the first state parameter and uses the second part of the second operand as a second part of the first reduction result. One of the first lane or the second lane performs a second reduction operation on the first and second parts of the first reduction result to generate a second reduction result.

Abstract: In an embodiment, a method includes: depositing a gate dielectric layer on a first fin and a second fin, the first fin and the second fin extending away from a substrate in a first direction, a distance between the first fin and the second fin decreasing along the first direction; depositing a sacrificial layer on the gate dielectric layer by exposing the gate dielectric layer to a self-limiting source precursor and a self-reacting source precursor, the self-limiting source precursor reacting to form an initial layer of a material of the sacrificial layer, the self-reacting source precursor reacting to form a main layer of the material of the sacrificial layer; annealing the gate dielectric layer while the sacrificial layer covers the gate dielectric layer; after annealing the gate dielectric layer, removing the sacrificial layer; and after removing the sacrificial layer, forming a gate electrode layer on the gate dielectric layer.

Abstract: A processor, an operation method, and a load-store device are provided. The processor is adapted to access a memory. The processor includes a vector register file (VRF) and the load-store device. The load-store device is coupled to the VRF. The load-store device performs a strided operation on the memory. In a current iteration of the strided operation, the load-store device reads a plurality of first data elements at a plurality of discrete addresses in the memory and writes the first data elements into the VRF, or the load-store device reads a plurality of second data elements from the VRF and writes the second data elements into a plurality of discrete addresses in the memory during the current iteration of the strided operation.