Abstract: A manufacturing method of an array substrate includes the following steps. A gate electrode and a gate insulator layer are successively formed on a substrate. A semiconductor layer, an etching stop layer, a hard mask layer, and a second patterned photoresist are successively formed on the gate insulator layer. The second patterned photoresist is employed for performing an over etching process to the hard mask layer to form a patterned hard mask layer. The second patterned photoresist is employed for performing a first etching process to the etching stop layer. The second patterned photoresist is then employed for performing a second etching process to the semiconductor layer to form a patterned semiconductor layer. The etching stop layer uncovered by the patterned hard mask layer is then removed for forming a patterned etching stop layer.

Abstract: This invention provides a transistor with an etching stop layer and a manufacturing method thereof. The transistor structure includes a substrate, a crystalline semiconductor layer, an etching stop structure, an ohmic contact layer, a source, a drain, a gate insulating layer, and a gate. The manufacturing method is performed by patterning the ohmic contact layer and the crystalline semiconductor layer at the same time with the same mask; and patterning the ohmic contact layer and the source/drain layer at the same time with another the same mask.

Abstract: A thin film transistor (TFT) that includes a gate, an oxide semiconductor layer, a gate insulator, a source, and a drain is provided. The gate insulator is located between the oxide semiconductor layer and the gate. The source and the drain are in contact with different portions of the oxide semiconductor layer. Each of the source and the drain has a ladder-shaped sidewall that is partially covered by the oxide semiconductor layer. A method for fabricating the above-mentioned TFT is also provided.

Abstract: A multi-function socket wrench includes a driving head, a handle, a pivot rod, a first elastic limit unit and a second elastic limit unit. The driving head is pivotally connected with the pivot rod. The driving head can be slidably moved on the handle through the pivot rod and the first elastic limit unit. The driving head and the handle are secured through the second elastic limit unit. The handle and the driving head of the multi-function socket wrench can be turned free as the demand of the user to be a T-shaped socket wrench or operated horizontally.

Abstract: A multi-function socket wrench includes a driving head, a handle, a pivot rod, a first elastic limit unit and a second elastic limit unit. The driving head is pivotally connected with the pivot rod. The driving head can be slidably moved on the handle through the pivot rod and the first elastic limit unit. The driving head and the handle are secured through the second elastic limit unit. The handle and the driving head of the multi-function socket wrench can be turned free as the demand of the user to be a T-shaped socket wrench or operated horizontally.

Abstract: A thin film transistor (TFT) including a gate, a gate insulator, an oxide semiconductor channel layer, a source, and a drain is provided. The gate insulator covers the gate, while the oxide semiconductor channel layer is configured on the gate insulator and located above the gate. The oxide semiconductor channel layer includes a first sub-layer and a second sub-layer located on the first sub-layer. An oxygen content of the first sub-layer is lower than an oxygen content of the second sub-layer. The source and the drain are configured on a portion of the second sub-layer. In addition, a fabricating method of the above-mentioned TFT is also provided.

Abstract: This invention provides a transistor with an etching stop layer and a manufacturing method thereof. The transistor structure includes a substrate, a crystalline semiconductor layer, an etching stop structure, an ohmic contact layer, a source, a drain, a gate insulating layer, and a gate. The manufacturing method is performed by patterning the ohmic contact layer and the crystalline semiconductor layer at the same time with the same mask; and patterning the ohmic contact layer and the source/drain layer at the same time with another the same mask.

Abstract: A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.

Abstract: A method of fabricating a pixel structure is provided. A gate electrode is formed on a substrate, and a dielectric layer is formed on the gate electrode. A patterned metal oxide semiconductor layer and a patterned metallic etching stop layer are formed on the dielectric layer above the gate electrode. A first conductive layer is formed to cover the patterned metallic etching stop layer and the dielectric layer. The first conductive layer is patterned by using the patterned metallic etching stop layer as an etching stop layer to form a source and a drain. A second conductive layer is formed to cover the source, the drain and the dielectric layer. The second conductive layer is patterned by using the patterned metallic etching stop layer as an etching stop layer to form a first electrode layer. The patterned metallic etching stop layer exposed between the source and the drain is removed.

Abstract: The present invention discloses a thin film solar cell module and a manufacturing method thereof. The thin film solar cell comprises, from bottom to top, a first substrate, a first electrode, an absorber layer, and a second electrode layer. A first current output region formed at the positive electrode of the thin film solar cell module. A first current output element is disposed in the first current output region, and the absorber layer further comprises at least a first gap which is disposed in the first current output region to increase the contact between the first electrode layer and the second electrode layer. The useless current, the resistance and the heat generated there are reduced. The heat generated there is also reduced.

Abstract: Disclosed are a thin film solar cell module and a manufacturing method thereof. The thin film solar cell comprises, from bottom to top, a first substrate, a first electrode, an absorber layer, and a second electrode layer. A current output region with a current output element disposed therein is formed at the thin film solar cell module. The absorber layer in the current output region is removed through a mask, thereby making the first electrode layer contacts directly there with the second electrode layer. The current output region can be formed at the positive electrode, the negative electrode, or both positive electrode and negative electrode simultaneously, of the thin film solar cell module, thereby increasing the contact area between the first electrode layer and the second electrode layer at the positive electrode and the negative electrode. The useless current, the resistance and the heat generated there are reduced.

Abstract: A reversible ratchet mechanism for ratchet tools comprises a positioning portion the middle section of which is formed with a concave U groove. Two sides of the U groove are each formed with a receiving groove to which a wedge flake is wedged. An elastic part is provided in the U groove to elastically push open the wedge flakes. A reversible ring is set around the positioning portion, the inner circumference of which is formed with two stoppers that may drive the wedge flakes to turn. A ratchet is set around the positioning portion, the inner side of which is formed with a gear wedging the wedge flakes. Thus, when turning an angle, the reversible ring may drive one of the wedge flakes to release from the gear and thus make the ratchet clutch in a direction.

Abstract: A ratchet driver includes a grip and a ratchet unit having a positioning base with a central through hole. The positioning base is mounted by a ratchet wheel and a direction-changing ring, having two accommodating grooves formed in its one side for respectively fitting a locking piece. An U-shaped groove is formed along the central through hole between the accommodating grooves, used for fitting an elastic element made of an elastic plate and having its two ends extended into the accommodating grooves to elastically rest on and strongly push the locking pieces while turning around the direction-changing ring, able to withstand a great integral torsion generated while turning the grip to drive the ratchet wheel and a driving head. Also, the ratchet driver has a simple structure, convenient to assemble and disassemble.

Abstract: A lead frame structure comprises a side rail, a first paddle, a second paddle, a plurality of leads, and an downset anchor bar. The first paddle is connected to the side rail via at least one first tie bar, and the second paddle is connected to the side rail via at least one-second tie bar. The first paddle and the second paddle separated from each other are used to define an area to support a chip. These leads set on the side rail expends toward to the chip supporting area. One end of the downset anchor bar is connected to the side rail, and the other end of the downset anchor bar has a protrusion portion which is between the first paddle and the second paddle and is downset from the side rail.

Abstract: A lead frame structure comprises a side rail, a first paddle, a second paddle, a plurality of leads, and an downset anchor bar. The first paddle is connected to the side rail via at least one first tie bar, and the second paddle is connected to the side rail via at least one-second tie bar. The first paddle and the second paddle separated from each other are used to define an area to support a chip. These leads set on the side rail expends toward to the chip supporting area. One end of the downset anchor bar is connected to the side rail, and the other end of the downset anchor bar has a protrusion portion which is between the first paddle and the second paddle and is downset from the side rail.

Abstract: A user can link a station to an access point by triggering buttons of the station and the access point respectively. After the buttons are triggered, the station scans the SSID of the access point. The access point updates SSID and sends out the new SSID to the station in response to the station's request. Then, the station generates a security key according to the new SSID and links the access point according to the new SSID and the security key so as to establish a WLAN link.

Abstract: A stepless telescopic hand tool includes a main body, a bar and a positioning device. The positioning device is installed between the main body and the bar, consisting of a rotating knob and a torsion spring. The rotating knob has an engaging hole bored axially at one side for correspondingly engaging with the bar and a penetrating hole bored at the other side for engaging with the main body. The torsion spring has a locking end at its two sides respectively for fitting in a hole of the bar and a locking hole of the rotating knob, for pivotally fitting the positioning device with the bar, enabling the main body to move freely while twisting the rotating knob and be tightened in case of releasing the rotating knob from being twisted.