Abstract: A method for forming a semiconductor device structure includes forming nanostructures over a substrate. The method also includes forming a work function layer surrounding the nanostructures. The method also includes forming spacers over opposite sides of the work function layer. The method also includes forming a first metal layer over the work function layer and sidewalls of the spacers. The method also includes forming a second metal layer surrounded by the first metal layer. The method also includes etching the first metal layer over opposite sides of the second metal layer. The method also includes forming a cap layer over a top surface and a sidewall of the second metal layer.

Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.

Abstract: In a method of manufacturing a semiconductor device a fin structure is formed in which first semiconductor layers and second semiconductor layers are alternately stacked over a substrate. A sacrificial gate structure is formed over the fin structure. A source/drain region of the fin structure that is not covered by the sacrificial gate structure is etched to form a source/drain space. An isolation region is formed at a bottom portion of the source/drain space. A source/drain epitaxial layer is formed over the isolation region in the source/drain space, and a void region in the isolation region is produced between the source/drain epitaxial layer and the substrate to cause electrical isolation between the source/drain region and the substrate.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a semiconductor fin structure including first semiconductor layers and second semiconductor layers alternatingly stacked, laterally recessing the first semiconductor layers of the semiconductor fin structure to form first notches in the first semiconductor layers, forming first passivation layers on first sidewalls of the first semiconductor layers exposed from the first notches, and forming first inner spacer layers in the first notches.

Abstract: An image capturing device includes a casing, a camera assembly, an adjustment element, a first stopping structure and a second stopping structure. The camera assembly is disposed within the casing. A portion of the camera assembly is exposed outside the casing. The adjustment element is connected with the camera assembly, and rotatable relative to the casing. As the adjustment element is rotated, the camera assembly is correspondingly rotated. The adjustment element includes a contacting structure. The first stopping structure and the second stopping structure are arranged between the casing and the adjustment element and located at different positions. When the camera assembly is switched to a horizontal photographing mode, the contacting structure is positioned at the first stopping structure. When the camera assembly is switched to a vertical photographing mode, the contacting structure is positioned at the second stopping structure.

Abstract: A semiconductor device includes first and second source/drain structures, a channel layer, a gate structure, and an epitaxial layer. The channel layer is above the first source/drain structure. The second source/drain structure is above the channel layer. The gate structure is on a first side surface of the channel layer. The epitaxial layer forms a P-N junction with a second side surface of the channel layer.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a fin disposed in a first region of the semiconductor device, channel members disposed in a second region of the semiconductor device and stacked in a vertical direction, first and second metal gates disposed on a top surface of the fin, a third metal gate wrapping around each of the channel members, a first implant region in the fin with a first conductivity type, and a second implant region in the fin with a second conductivity opposite the first conductivity type. The fin includes first and second type epitaxial layers alternatingly disposed in the vertical direction. The first and second type epitaxial layers have different material compositions. The first type epitaxial layers and the channel members have the same material composition.

Abstract: An image capturing device includes a casing, a camera assembly, an adjustment element, a first stopping structure and a second stopping structure. The camera assembly is disposed within the casing. A portion of the camera assembly is exposed outside the casing. The adjustment element is connected with the camera assembly, and rotatable relative to the casing. As the adjustment element is rotated, the camera assembly is correspondingly rotated. The adjustment element includes a contacting structure. The first stopping structure and the second stopping structure are arranged between the casing and the adjustment element and located at different positions. When the camera assembly is switched to a horizontal photographing mode, the contacting structure is positioned at the first stopping structure. When the camera assembly is switched to a vertical photographing mode, the contacting structure is positioned at the second stopping structure.

Abstract: A ring for clasping a cylindrical object includes a first element, a second element and a switch mechanism. The second element is circumferentially butted with the first element, and one end of the first element is adjacent to one end of the second element. The end of the second element has a protrusion protruding outwardly. The switch mechanism includes an abutting member adjacent to the end of the first element and configured to be rotated to abut against or move away from the protrusion of the end of the second element. When the abutting member is rotated and abuts against the protrusion of the end of the second element, the second element is fixed; when the abutting member is rotated and moves away from the protrusion of the end of the second element, the second element is released.

Abstract: A device includes a plurality of semiconductor fins extending from a substrate. A plurality of first source/drain regions are epitaxially grown from first regions of the semiconductor fins. Adjacent two of the plurality of first source/drain regions grown from adjacent two of the plurality of semiconductor fins are spaced apart by an isolation dielectric. A gate structure laterally surrounds second regions of the plurality of semiconductor fins above the first regions of the plurality of semiconductor fins. A plurality of second source/drain regions are over third regions of the plurality of semiconductor fins above the second regions of the plurality of semiconductor fins.

Abstract: The present disclosure provides embodiments of bipolar junction transistor (BJT) structures. A BJT according to the present disclosure includes a first epitaxial feature disposed over a well region, a second epitaxial feature disposed over the well region, a vertical stack of channel members each extending lengthwise between the first epitaxial feature and the second epitaxial feature, a gate structure wrapping around each of the vertical stack of channel members, a first electrode coupled to the well region, an emitter electrode disposed over and coupled to the first epitaxial feature, and a second electrode disposed over and coupled to the second epitaxial feature.

Abstract: An optical component includes a phase diffraction grating and an amplitude diffraction grating. The phase diffraction grating includes a center concave section and a plurality of ring stages. The ring stages surround the center concave section. The center concave section and the ring stages form a cavity, where a light source is disposed in the cavity and emits the light to the optical component. Each of the ring stages has a stage surface. Each of the stage surfaces includes a plurality of ring microstructures arranged in concentric circles. The widths of each ring microstructure in at least one of the ring stages are less than the quarter wavelength of the light. The amplitude diffraction grating includes a center convex section and a plurality of ring parts. The center convex section and the center concave section are aligned. The ring parts surround the central convex section.

Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.

Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material may be be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.

Abstract: Systems and processes for generating audio books from text are provided. An example process includes, at an electronic device having one or more processors and memory: receiving a text including at least a first subset and a second subset, wherein at least a portion of the first subset overlaps with at least a portion of the second subset; determining, based on the text, a prosody for a speech output, wherein the prosody is representative of a genre; determining a semantic meaning of the text; and generating, based on the prosody and the semantic meaning, the speech output of the text.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a structure having a frontside and a backside, the structure including a substrate and a stack of a first type and a second type epitaxial layers having different material compositions alternatively stacked above the substrate, wherein the stack is at the frontside of the structure and the substrate is at the backside of the structure; patterning the stack, thereby forming a fin above the substrate; implanting a first dopant into a first region of the fin, the first dopant having a first conductivity type; implanting a second dopant into a second region of the fin, the second dopant having a second conductivity type opposite the first conductivity type; and forming a first contact on the first region and a second contact on the second region.

Abstract: An integrated circuit device includes a substrate having a first portion in a first device region and a second portion in a second device region. A first semiconductor strip is in the first device region. A dielectric liner has an edge contacting a sidewall of the first semiconductor strip, wherein the dielectric liner is configured to apply a compressive stress or a tensile stress to the first semiconductor strip. A Shallow Trench Isolation (STI) region is over the dielectric liner, wherein a sidewall and a bottom surface of the STI region is in contact with a sidewall and a top surface of the dielectric liner.

Abstract: A device includes a semiconductor fin, a first epitaxy structure and a gate stack. The semiconductor fin protrudes from a substrate. The first epitaxy feature laterally surrounds a first portion of the semiconductor fin. The gate stack laterally surrounds a second portion of the semiconductor fin above the first portion of the semiconductor fin, wherein the second portion of the semiconductor fin has a lower surface roughness than the first epitaxy feature.

Abstract: A power supply system and operating method thereof are provided. The power supply system includes a power generation circuit and a discharge circuit. The power generation circuit is configured to provide an output voltage at an output end when a power is started, and stop providing the output voltage when the power is off. The discharge circuit includes a capacitor, a comparison circuit, and a switch circuit. The comparison circuit is configured to compare a voltage at a detection end and the output voltage at the output end to generate a comparison result. The switch circuit is configured to discharge the output end according to the comparison result when the power is off. The power supply system and an operating method thereof provided by the disclosure can reduce loss when the power is off, so as to improve the operation quality of the circuit.

Abstract: The present disclosure provides embodiments of bipolar junction transistor (BJT) structures. A BJT according to the present disclosure includes a first epitaxial feature disposed over a well region, a second epitaxial feature disposed over the well region, a vertical stack of channel members each extending lengthwise between the first epitaxial feature and the second epitaxial feature, a gate structure wrapping around each of the vertical stack of channel members, a first electrode coupled to the well region, an emitter electrode disposed over and coupled to the first epitaxial feature, and a second electrode disposed over and coupled to the second epitaxial feature.