Abstract: Some embodiments relate to an integrated chip structure. The integrated chip structure includes a substrate having a first device region and a second device region. A plurality of first transistor devices are disposed in the first device region and respectively include epitaxial source/drain regions disposed on opposing sides of a first gate structure. The epitaxial source/drain regions have an epitaxial material. A plurality of second transistor devices are disposed in the second device region and respectively include implanted source/drain regions disposed on opposing sides of a second gate structure. A dummy region includes one or more dummy structures. The one or more dummy structures have dummy epitaxial regions including the epitaxial material.

Abstract: An extreme ultra violet (EUV) light source apparatus includes an excitation laser inlet port configured to receive an excitation laser, and a first mirror configured to reflect the excitation laser that passes through a zone of excitation. A metal droplet is irradiated by the excitation laser.

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

Abstract: The present disclosure is directed towards an integrated chip including a first memory cell overlying a substrate. The first memory cell comprises a first data storage layer. A second memory cell is adjacent to the first memory cell. A dielectric layer is disposed laterally between the first memory cell and the second memory cell. An air gap is disposed within the dielectric layer. The air gap is spaced laterally between the first memory cell and the second memory cell.

Abstract: An electronic device is provided, which includes: a first substrate; a second substrate; a first polarizer, wherein the first substrate is disposed between the second substrate and the first polarizer; and a conductive adhesive disposed on the second substrate, wherein from a top view of the electronic device, a first portion of the conductive adhesive contacts the second substrate and extends along a first extending direction, a second portion of the conductive adhesive contacts the first substrate and extends along a second extending direction, the first extending direction and the second extending direction are different, a length of the second portion of the conductive adhesive along the second extending direction is greater than a length of the first portion of the conductive adhesive along the first extending direction, the first polarizer comprises an arc edge, and the arc edge is adjacent to the conductive adhesive.

Abstract: A semiconductor device includes a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes: electrodes including one or more first electrodes and one or more second electrodes; and one or more insulating layers disposed between adjacent electrodes. The MIM capacitor is disposed in an interlayer dielectric (ILD) layer disposed over a substrate. The one or more first electrodes are connected to a side wall of a first via electrode disposed in the ILD layer, and the one or more second electrodes are connected to a side wall of a second via electrode disposed in the ILD layer. In one or more of the foregoing or following embodiments, the one or more insulating layers include a high-k dielectric material.

Abstract: A semiconductor device structure and a formation method are provided. The method includes forming an opening in a semiconductor body, and the semiconductor body is p-type doped. The method also includes introducing n-type dopants into the semiconductor body to form a modified portion near the opening, and the modified portion is p-type doped. The method further includes forming a dielectric layer along the sidewalls and the bottom of the opening. In addition, the method includes forming a conductive structure over the dielectric layer to fill the opening.

Abstract: A semiconductor substrate stage for carrying a substrate is provided. The semiconductor substrate stage includes a carrier layer, a storage layer having an energy storage device and a water storage device, a magnetic shielding layer disposed between the carrier layer and the storage layer, and a receiver disposed in a recess of the carrier layer and partially exposed from the carrier layer.

Abstract: The present invention relates to a pharmaceutical composition containing liposomes, said liposome comprise an external lipid bilayer; and an internal aqueous medium including a weak acid drug with a half-life of less than 2 hours. Also provided is the use of the pharmaceutical composition disclosed herein to treat pulmonary hypertension with reduced dosing frequency.

Abstract: A semiconductor structure includes: a first conductive layer arranged over a substrate; a dielectric layer arranged over the first conductive layer; a second conductive layer arranged within the dielectric layer and electrically connected to the first conductive layer, the second conductive layer including a sidewall distant from the dielectric layer by a width; and a first blocking layer over a surface of the first conductive layer between the second conducive layer and the dielectric layer. The first blocking layer includes at least one element of a precipitant.

Abstract: A tunnel-type probe includes a tube, an elastic member, and a pin. The elastic member is assembled in the tube. The pin is movably disposed through the tube, and is electrically coupled to the tube by being connected to the elastic member. The pin has an inner segment, a contacting segment, and a limiting segment, the latter two of which are connected to two ends of the inner segment. The inner segment is arranged in the tube and is connected to the elastic member. The contacting segment and the limiting segment are respectively located at two opposite sides of the tube. When the tunnel probe abuts against a device under test (DUT) through the contacting segment, the pin is moved in a direction away from the DUT, such that the elastic member is deformed from being pressed by the pin so as to generate an elastic force.

Abstract: An open-type probe of a vertical probe card includes a frame, an elastic member, and a pin. The frame has an operation slot and two lateral openings being in spatial communication with the operation slot. The elastic member is assembled to the frame and is located in the operation slot. The pin includes an inner segment assembled in the operation slot and a contacting segment that protrudes from an opening of the operation slot. The pin abuts against the elastic member through the inner segment so as to be electrically coupled to the frame. The elastic member and the inner segment are arranged between the two lateral openings. The contacting segment is configured to abut against a device under test, so that the contacting segment is moved toward the operation slot to press the elastic member for deforming the elastic member to generate an elastic force.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.

Abstract: A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.

Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

Abstract: A temporary carrying substrate, a chip-transferring device and a chip transferring method are provided. The chip-transferring device includes a signal control module, a chip-carrying module and a chip-transferring module. The chip-transferring module is allowed to be configured to carry a temporary carrying substrate through the signal control module, and the temporary carrying substrate includes a plurality of micro heaters disposed thereinside or thereoutside. When the chip-transferring module needs to be configured to carry the temporary carrying substrate, a plurality of chips are arranged on a plurality of chip placement areas of the temporary carrying substrate and arranged in a predetermined arrangement shape. When the micro heater needs to be used, the micro heater is allowed to be configured to heat the temporary carrying substrate through the signal control module, thereby causing the temporary carrying substrate to generate thermal expansion to facilitate moving a corresponding one of the chips.

Abstract: A chip transferring and bonding device includes a signal control module, a substrate carrying module, a chip transferring module and a chip bonding module. The substrate carrying module is configured to be electrically connected to the signal control module. The chip transferring module is configured to be electrically connected to the signal control module. The chip bonding module is configured to be electrically connected to the signal control module. The chip bonding module includes at least one micro heater, and the at least one micro heater of the chip bonding module is a light source generator configured for generating a light source or a heat source generator configured for generating a heat source. When the chip bonding module is optionally configured to be used, the micro heater of the chip bonding module can be allowed to heat a corresponding one of the chips through the signal control module.

Abstract: A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.

Abstract: A method of manufacturing a semiconductor structure includes: forming a light-absorption layer in a substrate, wherein the light-absorption layer includes an upper surface above an upper surface of the substrate; forming a first doped region and a second doped region in the light-absorption layer adjacent to the first doped region; depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region; forming a first silicide layer in the opening on the second doped region; and forming a second silicide layer on the first doped region.