Patents by Inventor Chieh-Jen Ku

Chieh-Jen Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200350412
    Abstract: Thin film transistors having alloying source or drain metals are described. In an example, an integrated circuit structure includes a semiconducting oxide material over a gate electrode. A pair of conductive contacts is on a first region of the semiconducting oxide material. A second region of the semiconducting oxide material is between the pair of conductive contacts. The pair of conductive contacts includes a metal species. The metal species is in the first region of the semiconducting oxide material but not in the second region of the semiconducting oxide material.
    Type: Application
    Filed: May 1, 2019
    Publication date: November 5, 2020
    Inventors: Chieh-Jen KU, Bernhard SELL, Pei-Hua WANG, Gregory GEORGE, Travis W. LAJOIE, Abhishek A. SHARMA, Van H. LE, Jack T. KAVALIEROS, Tahir GHANI, Juan G. ALZATE VINASCO
  • Publication number: 20200303520
    Abstract: An integrated circuit structure comprises one or more backend-of-line (BEOL) interconnects formed over a first ILD layer. An etch stop layer is over the one or more BEOL interconnects, the etch stop layer having a plurality of vias that are in contact with the one or more BEOL interconnects. An array of BEOL thin-film-transistors (TFTs) is over the etch stop layer, wherein adjacent ones of the BEOL TFTs are separated by isolation trench regions. The TFTs are aligned with at least one of the plurality of vias to connect to the one or more BEOL interconnects, wherein each of the BEOL TFTs comprise a bottom gate electrode, a gate dielectric layer over the bottom gate electrode, and an oxide-based semiconductor channel layer over the bottom gate electrode having source and drain regions therein. Contacts are formed over the source and drain regions of each of BEOL TFTs, wherein the contacts have a critical dimension of 35 nm or less, and wherein the BEOL TFTs have an absence of diluted hydro-fluoride (DHF).
    Type: Application
    Filed: March 22, 2019
    Publication date: September 24, 2020
    Inventors: Chieh-Jen KU, Bernhard SELL, Pei-Hua WANG, Nikhil MEHTA, Shu ZHOU, Jared STOEGER, Allen B. GARDINER, Akash GARG, Shem OGADHOH, Vinaykumar HADAGALI, Travis W. LAJOIE
  • Publication number: 20200243376
    Abstract: Embodiments disclosed herein include transistors and methods of forming such transistors. In an embodiment, the transistor may comprise a semiconductor channel with a first surface and a second surface opposite the first surface. In an embodiment, a source electrode may contact the first surface of the semiconductor channel and a drain electrode may contact the first surface of the semiconductor channel. In an embodiment, a gate dielectric may be over the second surface of the semiconductor channel and a gate electrode may be separated from the semiconductor channel by the gate dielectric. In an embodiment, an isolation trench may be adjacent to the semiconductor channel. In an embodiment, the isolation trench comprises a spacer lining the surface of the isolation trench, and an isolation fill material.
    Type: Application
    Filed: January 29, 2019
    Publication date: July 30, 2020
    Inventors: Chieh-Jen KU, Bernhard SELL, Pei-Hua WANG, Harish GANAPATHY, Leonard C. PIPES
  • Publication number: 20200194434
    Abstract: Embodiments herein describe techniques for a semiconductor device including a substrate oriented in a horizontal direction, and a memory cell including a transistor and a capacitor above the substrate. The transistor includes a gate electrode oriented in a vertical direction substantially orthogonal to the horizontal direction, and a channel layer oriented in the vertical direction, around the gate electrode and separated by a gate dielectric layer from the gate electrode. The capacitor is within an inter-level dielectric layer above the substrate. The capacitor includes a first plate coupled with a second portion of the channel layer of the transistor, and a second plate separated from the first plate by a capacitor dielectric layer. The first plate of the capacitor is also a source electrode of the transistor. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: December 17, 2018
    Publication date: June 18, 2020
    Inventors: Juan G. ALZATE VINASCO, Abhishek A. SHARMA, Fatih HAMZAOGLU, Bernhard SELL, Pei-Hua WANG, Van H. LE, Jack T. KAVALIEROS, Tahir GHANI, Chieh-Jen KU, Travis W. LAJOIE, Umut ARSLAN
  • Patent number: 10658518
    Abstract: Magnesium Zinc Oxide (MZO)—based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: May 19, 2020
    Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
    Inventors: Yicheng Lu, Wen-Chiang Hong, Chieh-Jen Ku, Kuang Sheng, Rui Li
  • Publication number: 20200105861
    Abstract: An integrated circuit structure comprises at least one metal gate formed in a first dielectric layer, the at least one metal gate comprising a workfunction layer and the gate oxide layer along sidewalls of the first dielectric layer. A field effect (FE) dielectric layer dielectric layer is above the first dielectric layer of the at least one metal gate. A precision resistor comprising a thin-film metallic material is formed on the FE dielectric layer above the at least one metal gate and extending laterally over the at least one metal gate.
    Type: Application
    Filed: September 27, 2018
    Publication date: April 2, 2020
    Inventors: Chieh-Jen KU, Bernhard SELL, Leif PAULSON, Kinyip PHOA, Shi LIU
  • Publication number: 20200098932
    Abstract: Embodiments herein describe techniques for a semiconductor device including a capacitor and a transistor above the capacitor. A contact electrode may be shared between the capacitor and the transistor. The capacitor includes a first plate above a substrate, and the shared contact electrode above the first plate and separated from the first plate by a capacitor dielectric layer, where the shared contact electrode acts as a second plate for the capacitor. The transistor includes a gate electrode above the substrate and above the capacitor; a channel layer separated from the gate electrode by a gate dielectric layer, and in contact with the shared contact electrode; and a source electrode above the channel layer, separated from the gate electrode by the gate dielectric layer, and in contact with the channel layer. The shared contact electrode acts as a drain electrode of the transistor. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: September 26, 2018
    Publication date: March 26, 2020
    Inventors: Travis W. LAJOIE, Abhishek SHARMA, Van H. LE, Chieh-Jen KU, Pei-Hua WANG, Jack T. KAVALIEROS, Bernhard SELL, Tahir GHANI, Juan ALZATE VINASCO
  • Publication number: 20200091156
    Abstract: Described herein are two transistor (2T) memory cells that use TFTs as access and gain transistors. When one or both transistors of a 2T memory cell are implemented as TFTs, these transistors may be provided in different layers above a substrate, enabling a stacked architecture. An example 2T memory cell includes an access TFT provided in a first layer over a substrate, and a gain TFT provided in a second layer over the substrate, the first layer being between the substrate and the second layer (i.e., the gain TFT is stacked in a layer above the access TFT). Stacked TFT based 2T memory cells allow increasing density of memory cells in a memory array having a given footprint area, or, conversely, reducing the footprint area of the memory array with a given memory cell density.
    Type: Application
    Filed: September 17, 2018
    Publication date: March 19, 2020
    Applicant: Intel Corporation
    Inventors: Abhishek A. Sharma, Juan G. Alzate-Vinasco, Fatih Hamzaoglu, Bernhard Sell, Pei-hua Wang, Van H. Le, Jack T. Kavalieros, Tahir Ghani, Umut Arslan, Travis W. Lajoie, Chieh-jen Ku
  • Publication number: 20200035683
    Abstract: Described herein are arrays of embedded dynamic random-access memory (eDRAM) cells that use TFTs as selector transistors. When at least some selector transistors are implemented as TFTs, different eDRAM cells may be provided in different layers above a substrate, enabling a stacked architecture. An example stacked TFT based eDRAM includes one or more memory cells provided in a first layer over a substrate and one or more memory cells provided in a second layer, above the first layer, where at least the memory cells in the second layer, but preferably the memory cells in both the first and second layers, use TFTs as selector transistors. Stacked TFT based eDRAM allows increasing density of memory cells in a memory array having a given footprint area, or, conversely, reducing the footprint area of the memory array with a given memory cell density.
    Type: Application
    Filed: July 24, 2018
    Publication date: January 30, 2020
    Applicant: Inte Corpooration
    Inventors: Abhishek A. Sharma, Juan G. Alzate-Vinasco, Fatih Hamzaoglu, Bernhard Sell, Pei-hua Wang, Van H. Le, Jack T. Kavalieros, Tahir Ghani, Umut Arslan, Travis W. Lajoie, Chieh-jen Ku
  • Publication number: 20190326296
    Abstract: Described herein are embedded dynamic random-access memory (eDRAM) memory cells and arrays, as well as corresponding methods and devices. An exemplary eDRAM memory array implements a memory cell that uses a thin-film transistor (TFT) as a selector transistor. One source/drain (S/D) electrode of the TFT is coupled to a capacitor for storing a memory state of the cell, while the other S/D electrode is coupled to a bitline. The bitline may be a shallow bitline in that a thickness of the bitline may be smaller than a thickness of one or more metal interconnects provided in the same metal layer as the bitline but used for providing electrical connectivity for components outside of the memory array. Such a bitline may be formed in a separate process than said one or more metal interconnects. In an embodiment, the memory cells may be formed in a back end of line process.
    Type: Application
    Filed: April 18, 2018
    Publication date: October 24, 2019
    Applicant: Intel Corporation
    Inventors: Yih Wang, Abhishek A. Sharma, Tahir Ghani, Allen B. Gardiner, Travis W. Lajoie, Pei-hua Wang, Chieh-jen Ku, Bernhard Sell, Juan G. Alzate-Vinasco, Blake C. Lin
  • Publication number: 20190304897
    Abstract: An interconnect structure is disclosed. The interconnect structure includes a first metal interconnect in a bottom dielectric layer, a via that extends through a top dielectric layer, a metal plate, an intermediate dielectric layer, and an etch stop layer, and a metal in the via to extend through the top dielectric layer, the metal plate, the intermediate dielectric layer and the etch stop layer to the top surface of the first metal interconnect. The metal plate is coupled to an MIM capacitor that is parallel to the via. The second metal interconnect is on top of the metal in the via.
    Type: Application
    Filed: April 2, 2018
    Publication date: October 3, 2019
    Inventors: Travis LAJOIE, Abhishek SHARMA, Juan ALZATE-VINASCO, Chieh-Jen KU, Shem OGADHOH, Allen GARDINER, Blake LIN, Yih WANG, Pei-Hua WANG, Jack T. KAVALIEROS, Bernhard SELL, Tahir GHANI
  • Publication number: 20190305081
    Abstract: An integrated circuit includes a base, a first transistor structure on or above the base, and a second transistor structure on or above the base, where the second transistor structure is spaced from the first transistor structure. An insulator material at least partially encapsulates an airgap or other gas pocket laterally between the first transistor structure and the second transistor structure. The gas pocket is at least 5 nm in height and at least 5 nm wide according to an embodiment, and in some cases is as tall or taller than active device layers of the transistor structures it separates.
    Type: Application
    Filed: March 30, 2018
    Publication date: October 3, 2019
    Applicant: INTEL CORPORATION
    Inventors: Travis W. LaJoie, Abhishek A. Sharma, Juan Alzate-Vinasco, Chieh-Jen Ku, Shem O. Ogadhoh, Allen B. Gardiner, Blake C. Lin, Yih Wang, Pei-Hua Wang, Jack T. Kavalieros, Bernhard Sell, Tahir Ghani
  • Publication number: 20190237582
    Abstract: Magnesium Zinc Oxide (MZO)—based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.
    Type: Application
    Filed: August 18, 2017
    Publication date: August 1, 2019
    Inventors: Yicheng Lu, Wen-Chiang Hong, Chieh-Jen Ku, Kuang Sheng, Rui Li
  • Patent number: 9627439
    Abstract: A ZnO based display pixel structure that includes system-on-glass (SOG) substrates with embedded non-volatile resistive random access memory iNV-RRAM) is provided. Such pixels feature high frame rates and low power consumption. The entire SOG is based on ZnO devices. Different devices including TFT, TCO, RRAM, inverters, and shift registers are obtained through doping of different elements into selected ZnO active regions. This reduces the cost to package control circuitry onto a backplane of a display system, resulting in a low cost, light weight and uUra-thin display.
    Type: Grant
    Filed: May 8, 2013
    Date of Patent: April 18, 2017
    Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
    Inventors: Yicheng Lu, Chieh-Jen Ku
  • Patent number: 9590015
    Abstract: A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: March 7, 2017
    Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
    Inventors: Yicheng Lu, Yang Zhang, Chieh-Jen Ku
  • Publication number: 20150318332
    Abstract: A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.
    Type: Application
    Filed: November 10, 2014
    Publication date: November 5, 2015
    Inventors: Yicheng Lu, Yang Zhang, Chieh-Jen Ku
  • Patent number: 9064965
    Abstract: This application discloses ZnO film transistor-based immunosensors (ZnO-bioTFT), 2T biosensor arrays formed from two integrated ZnO-bioTFTs, 1T1R-based nonvolatile memory (NVM) arrays formed from ZnO-bioTFT (T) integrated with ZnO-based resistive switches (R), as well as integrated bioTFT (IBTFT) sensor systems formed from 2T biosensor arrays and 1T1R NVM arrays. Through biofunctionalization, these biosensors can perform immunosensing with high sensitivity and selectivity, and therefore have a wide range of applications, for example, in detecting target biomolecules or small molecules, and potential application in cancer diagnosis and treatment.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: June 23, 2015
    Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
    Inventors: Yicheng Lu, Pavel Ivanoff Reyes, Ki-Bum Lee, Aniruddh Solanki, Chieh-Jen Ku
  • Publication number: 20150155334
    Abstract: A ZnO based display pixel structure that includes system-on-glass (SOG) substrates with embedded non-volatile resistive random access memory iNV-RRAM) is provided. Such pixels feature high frame rates and low power consumption. The entire SOG is based on ZnO devices. Different devices including TFT, TCO, RRAM, inverters, and shift registers are obtained through doping of different elements into selected ZnO active regions. This reduces the cost to package control circuitry onto a backplane of a display system, resulting in a low cost, light weight and uUra-thin display.
    Type: Application
    Filed: May 8, 2013
    Publication date: June 4, 2015
    Applicant: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
    Inventors: Yicheng Lu, Chieh-Jen Ku
  • Patent number: 8884285
    Abstract: A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: November 11, 2014
    Assignee: Rutgers, The State University of New Jersey
    Inventors: Yicheng Lu, Yang Zhang, Chieh-Jen Ku
  • Publication number: 20140027702
    Abstract: A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.
    Type: Application
    Filed: March 1, 2013
    Publication date: January 30, 2014
    Applicant: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
    Inventors: Yicheng Lu, Yang Zhang, Chieh-Jen Ku