Chien-An Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A makeup fluid management and supply device and method are provided. The method includes the steps of: receiving a cosmetic style template sent from a user device; selecting a makeup bottle by the control module in accordance with a makeup application step of the cosmetic style template and moving the makeup bottle to a using position by the driving module; reading a label information of the makeup bottle; sending the label information to the management unit so as to perform a validation procedure on the makeup bottle; rotating, in response to a positive validation result, the makeup bottle by the driving module so as to perform a makeup fluid mixing procedure on the makeup bottle; and driving, by the driving module, the makeup bottle to move in a first direction until the makeup bottle is squeezed so as to obtain a makeup fluid of the makeup bottle.
June 3, 2020
Date of Patent:
October 4, 2022
Wen Hsing Chen, Alexander Ong Sy, Christie Chien, Charlene Hsueh-Ling Wong
Abstract: A method for fabricating a semiconductor device includes the steps of first forming a fin-shaped structure on a substrate, forming a dielectric layer surrounding the fin-shaped structure, performing an anneal process to transform the dielectric layer into a shallow trench isolation (STI), removing the fin-shaped structure to form a trench, and forming a stack structure in the trench. Preferably, the stack structure includes a first semiconductor layer on the fin-shaped structure and a second semiconductor layer on the first semiconductor layer and the first semiconductor layer and the second semiconductor layer include different materials.
Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.
Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.
Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.
Abstract: A circuit assembly includes an integrated circuit (IC) die and a capacitor die. The IC die has a first hybrid bonding layer. The capacitor die is stacked with the IC die, and is configured to include a capacitor coupled to the IC die, and has a second hybrid bonding layer in contact with the first hybrid bonding layer; wherein the IC die is electrically coupled to the capacitor die through the first hybrid bonding layer and the second hybrid bonding layer.
June 1, 2022
September 22, 2022
AP Memory Technology Corp.
Wenliang CHEN, Jun GU, Masaru HARAGUCHI, Takashi KUBO, Chien-An YU, Chun Yi LIN
Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
Abstract: The present disclosure describes an image sensor device and a method for forming the same. The image sensor device can include a semiconductor layer. The semiconductor layer can include a first surface and a second surface. The image sensor device can further include an interconnect structure formed over the first surface of the semiconductor layer, first and second radiation sensing regions formed in the second surface of the semiconductor layer, a metal stack formed over the second radiation sensing region, and a passivation layer formed through the metal stack and over a top surface of the first radiation sensing region. The metal stack can be between the passivation layer and an other top surface of the second radiation sensing region.
Abstract: The present invention extends to methods, systems, and computer program products for converting an RTSP coordinated stream into an HLS stream. A server participates essentially simultaneously in an RTSP coordinated stream with a content creating electronic device (e.g., a camera) and in an HLS stream with the end-point (e.g., a Web browser). The media server receives a portion of RTSP stream data directly from the content creating electronic device. The media streaming server converts the portion of RTSP stream data into HLS stream data. The media streaming server sends the HLS stream data via the HLS stream to the end-point. The end-point or an end-point user may subsequently request termination of content streaming. In response to an HLS terminate instruction, the streaming media server can coordinate (e.g., concurrent) termination of both the RTSP coordinated stream and the HLS stream.
Abstract: A real/fake fingerprint recognition device includes a light source, a detector, and a processor. The light source is configured to provide a first color light and a second color light to a fingerprint. The detector is configured to receive a first reflect light corresponding to the first color light, and receive a second reflect light corresponding to the second color light. The processor is configured to establish a first image and a second image according to the first reflect light and the second reflect light respectively, and determine whether the fingerprint is a real fingerprint according to the first image and the second image.
Abstract: The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.
Abstract: An optoelectronic module, including a substrate, a covering member, a light emitting element, and a light receiving element, is provided. The covering member is disposed on the substrate and includes an upper cover portion, a peripheral sidewall portion connected to the upper cover portion, and an inside partition delimiting a first cavity and a second cavity. The first cavity is separated from the second cavity. The light emitting element is disposed on the substrate as corresponding to the first cavity. The light receiving element is disposed on the substrate as corresponding to the second cavity. The inside partition has a first inner wall surface located in the first cavity and a second inner wall surface located in the second cavity. A first protruded-recessed structure is formed on the first inner wall surface.
March 10, 2022
September 15, 2022
Lite-On Technology Corporation
Jui Lin Tsai, Chien Tien Wang, Shu-Hua Yang, Hsin Wei Tsai, You-Chen Yu
Abstract: A cap assembly adapted to removably attach to a medicament delivery device is presented having a longitudinally extending cap body configured to be removably attached to a proximal end of the medicament delivery device; an electronic component associated with the cap body; a power source associated with the cap body and configured for powering the electronic component; a resilient member associated with the cap body and configured to establish an electrical connection between the power source and the electronic component, wherein the cap body can have a movable member configured to interact with the resilient member and with a component of the medicament delivery device such that when the cap body is attached to the medicament delivery device, the resilient member is prevented to establish the electrical connection between the power source and the electronic component.
Abstract: An air-pulse generating device includes a membrane structure, a valve structure, and a cover structure. A chamber is formed between the membrane structure, the valve structure and the cover structure. An air wave vibrating at an operating frequency is formed within the chamber. The valve structure is configured to be actuated to perform an open-and-close movement to form at least one opening. The at least one opening connects air inside the chamber with air outside the chamber. The open-and-close movement is synchronous with the operating frequency.
Abstract: A package structure includes a first chip and a second chip. The first chip is connected to a pair of first signal lines and a plurality of first power lines. The second chip is connected to a pair of second signal lines and a plurality of second power lines. The first chip and the second chip belong to a common wafer. A separated street is between the first chip and the second chip.
Abstract: An image sensor includes an array of image pixels and black level correction (BLC) pixels. Each BLC pixel includes a BLC pixel photodetector, a BLC pixel sensing circuit, and a BLC pixel optics assembly configured to block light that impinges onto the BLC pixel photodetector. Each BLC pixel optics assembly may include a first portion of a layer stack including a vertically alternating sequence of first material layers having a first refractive index and second material layers having a second refractive index. Additionally or alternatively, each BLC pixel optics assembly may include a first portion of a layer stack including at least two metal layers, each having a respective wavelength sub-range having a greater reflectivity than another metal layer. Alternatively or additionally, each BLC pixel optics assembly may include an infrared blocking material layer that provides a higher absorption coefficient than color filter materials within image pixel optics assemblies.
Abstract: An image sensor device is disclosed which includes a semiconductor layer having a first surface and a second surface, where the second surface is opposite to the first surface. The device includes a conductive structure disposed over the first surface, with a dielectric layer disposed between the conductive structure and the first surface. The device includes a first dielectric layer disposed over the second surface of the semiconductor substrate. The device includes a second dielectric layer disposed over the first dielectric layer. The device includes a color filter layer disposed over the second dielectric layer. In some embodiments, the thickness, refractive index, or both of the first dielectric layer and the thickness, refractive index, or both of the second dielectric layer may be collectively determined to cause incident radiation passing through the first dielectric layer and the second dielectric layer and to the plurality of pixels to have destructive interference.
March 4, 2021
September 8, 2022
Taiwan Semiconductor Manufacturing Company Limited
Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary manufacturing method includes providing a workpiece that includes a substrate, first channel members and second channel members over the substrate, a first gate structure engaging the first channel members, a second gate structure engaging the second channel members, a dielectric fin disposed between the first and second gate structures, an isolation feature disposed under the dielectric fin. The method also includes forming a metal cap layer at the frontside of the workpiece and depositing a dielectric feature on the dielectric fin. The dielectric feature dividing the metal cap layer into a first segment and a second segment. The method also includes etching the isolation feature to form a trench at the backside of the substrate, depositing a spacer on sidewalls of the trench, etching the dielectric fin from the trench, and depositing a seal layer in the trench.
September 1, 2021
September 8, 2022
Jung-Chien Cheng, Kuo-Cheng Chiang, Shi Ning Ju, Guan-Lin Chen, Jia-Chuan You, Chia-Hao Chang, Chih-Hao Wang, Kuan-Lun Cheng
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
Abstract: Disclosed herein are methods for high-throughput screening of a virus-specific neutralizing antibody. According to certain embodiments of the present disclosure, the virus is an influenza virus. Also disclosed herein are the antibodies selected by the high-throughput screening method, and the uses thereof in the prophylaxis and/or treatment of viral infection.