Abstract: Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.

Abstract: Methods are provided for forming a circuit component on a workpiece substrate. The methods comprise the steps of depositing a dielectric material over the substrate; etching a pattern through the dielectric material to expose a portion of the substrate; depositing a barrier metal over the dielectric material and the exposed portion of the substrate; depositing a conductive metal over the barrier metal, the deposited conductive metal having a thickness sufficient to fill the etched pattern; planarizing the conductive metal to form a planar metal layer; and polishing the metal layer and the barrier metal in a single polishing step using an abrasive-free polish until the dielectric material surrounding the pattern is exposed.

Abstract: Methods are provided for forming a circuit component on a workpiece substrate. The methods comprise the steps of depositing a dielectric material over the substrate; etching a pattern through the dielectric material to expose a portion of the substrate; depositing a barrier metal over the dielectric material and the exposed portion of the substrate; depositing a conductive metal over the barrier metal, the deposited conductive metal having a thickness sufficient to fill the etched pattern; planarizing the conductive metal to form a planar metal layer; and polishing the metal layer and the barrier metal in a single polishing step using an abrasive-free polish until the dielectric material surrounding the pattern is exposed.

Abstract: The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Resistivity in the upper section is higher than in the lower section. A second dielectric film is disposed over the first dielectric film and has an upper surface that is coplanar with the upper section at an upper surface.

Abstract: A phase-change memory cell may be formed by selectively depositing the lower electrode in the phase-change memory pore. Thereafter, an adhesion-promoting material may be selectively deposited on the selectively deposited lower electrode and the upper surface surrounding the pore. Through the use of selective deposition techniques, the adhesion-promoting material can be positioned where needed and the lower electrode may be defined in a fashion that may reduce shunting current, reduce device current requirements, and increase dynamic range in some embodiments.

Abstract: A backlight module of a directly lighting backlight device comprises a casing; at least one S shape lamp tube; a reflecting sheet positioned below the lamp tube; a guide plate; the reflecting sheet reflecting light from the lamp tube with a predetermined angle to a guide plate above the lamp tube; the guide plate having the effect of diffusing the light to various angles by the pattern on the guide plate or the diffusion agents; whole reflection being not formed so that light is emitted out from a front surface of the guide plate and thus the guide plate reflects light uniformly; a diffuser receiving the uniform distributed light; the diffuser being above the guide plate; and at least one light enhancing sheet; light diffused by the diffuser will further radiate to the at least one light enhancing sheets.

Abstract: An upside-down MRAM comprises a sense transistor and a plurality of sense lines. A first end of the sense transistor is electrically connected to a low voltage. The sense lines are electrically connected in parallel between a high voltage and a second end of the sense transistor. Each of the sense lines has a control logic and at least one memory bit, and the memory bit is connected in series between the high voltage and the control logic.

Abstract: A docking station including a housing, a linkage, a forcing member and a first connector for electrically connecting to a first connector of an electronic device, is provided. The housing includes a platform having a first opening and the electronic device is suitable for being placed on the platform. The housing further comprises a second opening located outside the platform. The linkage is disposed within the housing. The forcing member disposed on the second opening is connected to one end of the linkage, wherein the forcing member is suitable for moving back and forth along a predetermined path to actuate the linkage. The first connector disposed on the first opening is connected to the other end of the linkage, wherein the first connector is suitable for expanding and contracting in the first opening through the linkage to be connected to or disconnected from the second connector of the electronic device.

Abstract: Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.

Abstract: A portable electronic device disposed in a car is provided. The portable electronic device includes a power switch, a vibration sensor and a controller. The power switch is used for providing a first power at a first state and providing a second power at a second state. The vibration sensor is used for outputting a vibration signal after sensing the vibration of the car. The vibration sensor is used for terminating the output of vibration signal when not sensing the vibration of the car. The controller is electrically connected to the vibration sensor and the power switch. When the controller receives the vibration signal, the controller controls the power switch to be at the first state and provide the first power. When the controller does not receive the vibration signal, the controller controls the power switch to be at the second state and provide the second power.

Abstract: An upside-down MRAM comprises a sense transistor and a plurality of sense lines. A first end of the sense transistor is electrically connected to a low voltage. The sense lines are electrically connected in parallel between a high voltage and a second end of the sense transistor. Each of the sense lines has a control logic and at least one memory bit, and the memory bit is connected in series between the high voltage and the control logic.

Abstract: A phase-change memory cell may be formed by selectively depositing the lower electrode in the phase-change memory pore. Thereafter, an adhesion-promoting material may be selectively deposited on the selectively deposited lower electrode and the upper surface surrounding the pore. Through the use of selective deposition techniques, the adhesion-promoting material can be positioned where needed and the lower electrode may be defined in a fashion that may reduce shunting current, reduce device current requirements, and increase dynamic range in some embodiments.

Abstract: The formation of gate spacers on the sides of a gate structure on a semiconductor substrate is provided. In one embodiment, a gate structure is formed on a gate insulator layer of the semiconductor substrate. A liner layer is formed over the exposed surfaces of the substrate, the gate insulator layer, and the gate structure. A layer of gate spacer material is formed over the liner layer. Thereafter, gate spacers are formed from the layer of gate spacer material. A protection layer is formed over portions of the liner layer, gate structure, and the gate spacers. The protection layer is etched back. A first wet etch procedure is performed to remove exposed portions of the liner layer. The protection layer is removed and a second wet etch procedure is performed to remove substantially a top portion and a bottom portion of the liner layer.

Abstract: A semiconductor device provides a gate structure that includes a conductive portion and a high-k dielectric material formed beneath and along sides of the conductive material. An additional gate dielectric material such as a gate oxide may be used in addition to the high-k dielectric material. The method for forming the structure includes forming an opening in an organic material, forming the high-k dielectric material and a conductive material within the opening and over the organic material then using chemical mechanical polishing to remove the high-k dielectric material and conductive material from regions outside the gate region.

Abstract: An electronic device with sliding type heatsink including a printed circuit board, a heat dissipation module and at least a guide post is provided. Wherein, a heat-generating element is disposed on the printed circuit board, and the heat dissipation module is disposed on the heat-generating element. The heat dissipation module includes at least an elastic element which has an assembly hole. The assembly hole has a guide part and a first fixing part. Besides, the guide post protrudes from the printed circuit board and is located in the assembly hole. A side of the guide post has a groove. When the heat dissipation module moves a suited distance, the groove slides into the first fixing part from the guide part that makes the guide post fix with the first fixing part. Thus, the heat dissipation module can tightly fix on the heat-generating element.

Abstract: A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial layer may be reduced by providing a discontinuity or other feature that reduces or prevents conduction along said interfacial layer.

Abstract: A hologram fabricating apparatus includes a coherent light generator, two micro-display devices and a telecentric system. The coherent light generator provides a first coherent light and a second coherent light. Each micro-display device has a plurality of pixel elements laid thereon. The first coherent light and the second coherent light project respectively to the two micro-display devices. The telecentric system is located between the micro-display devices and a photoresist sheet to converge the projecting light on the photoresist sheet to generate interference stripes. Each pixel element may be adjusted independently to determine whether the first coherent light and the second coherent light projected to the pixel element to be projected to the telecentric system.

Abstract: A memory comprises a plurality of memory units electrically connected. Each of the memory units comprises a pull-down transistor, a plurality of column lines and a selector. Each of the column lines has at least one bit. The selector is electrically connected between the pull-down transistor and the column lines. The selector is arranged to select one from the column lines to be accessed by the pull-down transistor. This results in a memory design that is faster, has more capability, is cheaper to build, quieter, and lower power.

Abstract: The present invention describes a backlight module that includes a lamp, a diffuser, an optical film and a liquid crystal display panel installed in sequence between a reflective mask and a diffuser, and the reflective mask has a light transmission window at the bottom, and the light transmission window includes a dimmer, an optical film and a sub liquid crystal display panel installed in sequence outside the light transmission window, so that a light is evenly emitted from the upper and lower liquid crystal display panels and sub liquid crystal display panels. The invention not only simultaneously displays screens, but also improves the light application rate.

Abstract: The present invention describes a backlight module that includes a lamp, a diffuser, an optical film and a liquid crystal display panel installed in sequence between a reflective mask and a diffuser, and the reflective mask has a light transmission window at the bottom, and the light transmission window includes a dimmer, an optical film and a sub liquid crystal display panel installed in sequence outside the light transmission window, so that a light is evenly emitted from the upper and lower liquid crystal display panels and sub liquid crystal display panels. The invention not only simultaneously displays screens, but also improves the light application rate.