Abstract: A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.

Abstract: A system for facilitating medical image interpretation includes a processing unit and a display control unit. The processing unit includes a location information module generating a reference location indicator, and a feature marking module generating indication markers. The display control unit is in signal connection with the processing unit and a display device. The display control unit includes an image displaying module controlling the display device to display tissue images, and an auxiliary information displaying module controlling the display device to display, for each of the tissue images displayed by the display device, the reference location indicator and the indication markers together on the tissue image.

Abstract: A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: An integrated circuit includes a dielectric layer, a memory device, and a resistor. The memory device includes a bottom electrode via, a bottom electrode, a resistance switching element, and a top electrode. The bottom electrode via is in the dielectric layer. The dielectric layer has a first portion extending along sidewalls of the bottom electrode via, a second portion extending laterally from the first portion, and a third portion. The bottom electrode is over the bottom electrode via. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element. The resistor is over the third portion of the dielectric layer. A thickness of the third portion of the dielectric layer is greater than a thickness of the second portion of the dielectric layer.

Abstract: A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.

Abstract: An integrated circuit is provided. The integrated circuit includes a metallization pattern, a dielectric layer, and plural memory devices. The metallization pattern has plural first conductive features and a second conductive feature. The dielectric layer is over the metallization pattern, in which the dielectric layer has a first portion over the first conductive features and a second portion over the second conductive feature. The memory devices are at least partially in the first portion of the dielectric layer and respectively connected with the first conductive features. The first portion of the dielectric layer has a plurality of side parts respectively surrounding the memory devices and an extending part connecting the side parts to each other, and a thickness of the second portion is greater than a thickness of the extending part of the first portion of the dielectric layer.

Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.

Abstract: A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.

Abstract: A system for facilitating medical image interpretation includes a processing unit and a display control unit. The processing unit includes a location information module generating a reference location indicator, and a feature marking module generating indication markers. The display control unit is in signal connection with the processing unit and a display device. The display control unit includes an image displaying module controlling the display device to display tissue images, and an auxiliary information displaying module controlling the display device to display, for each of the tissue images displayed by the display device, the reference location indicator and the indication markers together on the tissue image.

Abstract: Disclosed is a biodegradable composition, including: 5 to 90 percent by weight of polylactic acid (PLA), 5 to 80 percent by weight of plant fiber, and 5 to 70 percent by weight of maleic anhydride-grafted polybutylene succinate (PBS-g-MA), acrylic acid-grafted polybutylene succinate (PBS-g-AA), or silane coupling agent-grafted polybutylene succinate (PBS-g-Silane). The article manufactured therefrom is not only biodegradable but also has an enhanced heat deformation temperature, impact resistance and tensile strength. Further, by so limiting the proportion of each component, compatibility between the components may be increased and crystallization of polylactic acid may be facilitated.

Abstract: A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.

Abstract: A method for manufacturing a shoe part includes: the first mixing step, the standing step, the second mixing step, the setting step, and the hot press forming step. The invention mainly uses the waste coffee grounds material as raw material to manufacture the shoe part. In addition to the aroma of coffee, the shoes have the functions of deodorization and dehumidification while being worn by the user, thereby achieving multiple objectives of environmentally friendly materials, low cost, strong structure and environmentally friendly after-use treatment.

Abstract: The present invention provides a shoe material part mainly composed of a coffee ground material, a porous material and a rubber-plastic material, and is made of a recycled waste porous material and recycled waste coffee grounds, which can improve the value of waste recycling and reuse, and reduce environmental pollution, in addition to reducing waste, there will be no residue pollution of natural ecology and other issues in the subsequent environmental recycling, quite in line with environmental requirements. In addition, the present invention has the function of natural deodorization, because the coffee grounds can naturally diffuse the aroma of coffee, and the characteristics of better deodorization and air permeability of the coffee grounds can be used to reduce the foul smell of a user's foot.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: The present disclosure provides a method for manufacturing semiconductor structure, including forming an insulation layer, forming a first via trench in the insulation layer, forming a barrier layer in the first via trench, forming a bottom electrode via in the first via trench, forming a magnetic tunneling junction (MTJ) layer above the bottom electrode via, and performing an ion beam etching operation, including patterning the MTJ layer to form an MTJ and removing a portion of the insulation layer from a top surface.

Abstract: A light-emitting module and a tandem light-emitting device include an insulating housing, a control chip, a light-emitting unit, and a plurality of pins. The insulating housing has an upper accommodating space and a lower accommodating space, the lower accommodating space is below the upper accommodating space directly, and the upper accommodating space forms an opening at the upper end of the insulating housing. The control chip is located in the lower accommodating space. The light-emitting unit is located in the upper accommodating space and is electrically connected to the control chip. A plurality of pins are exposed outside the insulating housing. The control chip can receive an electrical signal transmitted by an external control device through the pins to control the illumination of the light-emitting unit.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: The present disclosure provides a semiconductor structure, including a bottom electrode via, a top surface of the bottom electrode via having a first width, a barrier layer surrounding the bottom electrode via, and a magnetic tunneling junction (MTJ) over the bottom electrode via, a bottom of the MTJ having a second width, the first width being narrower than the second width.