Abstract: In an embodiment, a device includes a substrate, a first semiconductor layer that extends from the substrate, and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes silicon and the second semiconductor layer includes silicon germanium, with edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, and the second germanium concentration being less than the first germanium concentration. The device also includes a gate stack on the second semiconductor layer, lightly doped source/drain regions in the second semiconductor layer, and source and drain regions extending into the lightly doped source/drain regions.

Abstract: A system and method for cleaning ring frames is disclosed. In one embodiment, a ring frame processing system includes: a plurality of blades for mechanically removing tapes and tape residues from surfaces of a ring frame; a plurality of wheel brushes for conditioning the surfaces of the ring frame; and a transport mechanism for transporting the ring frame.

Abstract: A speaker module is adapted to be configured to a wearable device. The speaker module includes an enclosure and a driving unit. The driving unit is used to generate sound. The enclosure contains the driving unit. A sound sum of the sound output from a front opening, a first rear opening and a second rear opening of the enclosure has directivity. The connection vectors and the inverse vector of the connection normal vector defined by these openings are added to form a combined vector. A unit vector of the combination vector and a unit vector of a front normal vector facing outwards of the front opening are added to form a sum vector. The direction of the sum vector is the direction of the sound sum.

Abstract: A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.

Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, a ring-shaped supporting layer disposed on the sensor chip, and a light-permeable layer disposed on the ring-shaped supporting layer. The ring-shaped supporting layer has an inner surrounding surface and an outer surrounding surface that is opposite to the inner surrounding surface. At least one of the inner surrounding surface and the outer surrounding surface has a plurality of round-ended microstructures that are sequentially connected to each other and that surround a sensing region of the sensor chip. An end of each of the round-ended microstructures is a round-ended portion having a radius of less than 1 ?m. The light-permeable layer, the inner surrounding surface of the ring-shaped supporting layer, and the sensor chip jointly define an enclosed space.

Abstract: An internal radio wave transmission system of building includes a base layer and a transmission layer, with a radio wave transmission channel between the two layers. The radio wave transmission system in a building includes a signal transceiver device, a first reflective plate and a second reflective plate. The signal transceiver device is connected with a telecommunication room, and the signal transceiver device emits and receives radio wave signals. The first reflective plate is disposed in the channel and corresponds to positions of the base layer and the signal transceiver device to receive and guide the radio wave signals. The second reflective plate is disposed in the channel and corresponds to a position of the transmission layer to receive and guide the radio wave signals to terminal equipment located in the transmission layer. The invention ensures the effective transmission of the radio wave signals inside the building.

Abstract: A semiconductor device may include one or more transistor structures that include a plurality of source/drain regions and a gate structure between the source/drain regions. The semiconductor device may further include one or more dielectric layers between a source/drain contact structure and a gate structure of the one or more of the transistor structures. The one or more dielectric layers may be manufactured using on oxidation treatment process to tune the dielectric constant of the one or more dielectric layers. The dielectric constant of the one or more dielectric layers may be tuned to reduce the parasitic capacitance between the source/drain contact structure and the gate structure (which are conductive structures). In particular, the dielectric constant of the one or more spacer dielectric may be tuned using the oxidation treatment process to lower the as-deposited dielectric constant of the one or more dielectric layers.

Abstract: A device includes a substrate. A first channel region of a first transistor overlies the substrate and a source/drain region is in contact with the first channel region. The source/drain region is adjacent to the first channel region along a first direction, and the source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A dielectric fin structure is adjacent to the source/drain region along a second direction that is transverse to the first direction, and the dielectric fin structure has an upper surface, a lower surface, and an intermediate surface that is disposed between the upper and lower surfaces. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region and on the intermediate surface of the dielectric fin structure.

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Abstract: A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has a photonic crystal structure. The insulating layer is disposed on an upper surface and a sidewall surface of the first platform, and on an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, the active layer, and at least a portion of the first waveguiding layer. The first electrode is on the insulating layer and the second electrode is connected to the outer surface of the substrate and arranged to form an opening for laser output.

Abstract: An optical device includes an electronic component, a light-permeable layer, and a ring-shaped adhesive layer that is sandwiched between the electronic component and the light-permeable layer. The ring-shaped adhesive layer surrounds an optical region of the electronic component and includes a plurality of light-weakening slots that are formed on an inner side surface thereof. The light-weakening slots are in a ring-shaped arrangement and surround the optical region. Each of the light-weakening slots has a slot opening having a slot width and a slot bottom spaced apart from the slot opening by a slot depth. A width of each of the light-weakening slots gradually decreases along a direction from the slot opening to the slot bottom, and a ratio of the slot width to the slot depth is within a range from 1:0.86 to 1:11.4, such that each of the light-weakening slots is configured to weaken light irradiated thereon.

Abstract: An embodiment of the invention provides an electrocardiography (ECG) signal processing device. The ECG signal processing device includes a first part, a second part and a flexible printed circuit board. The first part may comprise a first electrode and a processing circuit. The second part includes a second electrode. The flexible printed circuit board is coupled to the first part and the second part to fold the first part and the second part. When a closed loop is formed between the first electrode and the second electrode, the processing circuit obtains an ECG signal from the user.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, a plurality of adhesive rings disposed on the sensor chip, a plurality of filtering lenses respectively adhered to the adhesive rings, and an encapsulant that surrounds the above components. A sensing region of the sensor chip has a layout boundary and a plurality of sub-regions that are defined by the layout boundary and that are separate from each other. The adhesive rings are disposed on the sensing region, and each of the adhesive rings surrounds one of the sub-regions. Each of the filtering lenses, a corresponding one of the adhesive rings, and a corresponding one of the sub-regions jointly define a buffering space. The encapsulant is formed on the substrate and covers the layout boundary of the sensor chip.

Abstract: A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a light-transmissive conducting layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has multiple holes to form a photonic crystal structure. The insulating layer is over an upper surface and a sidewall surface of the first platform, and over an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, and the active layer. The light-transmissive conducting layer connects to the photonic crystal structure through an aperture of the insulating layer. The first electrode has an opening corresponding to the aperture. The second electrode is under the substrate.

Abstract: Integrated semiconductor devices and method of making the integrated semiconductor are disclosed. The integrated semiconductor device may include a first transistor comprising a first gate and at least one first active region, a second transistor comprising a second gate and at least one second active region, wherein the second transistor is spaced a first distance from the first transistor, a dielectric sidewall spacer formed on a gate sidewall of the first transistor and a gate sidewall of the second transistor, a first dielectric layer formed over the first transistor and the second transistor, wherein a thickness of the first dielectric layer is greater than half the first distance, and a patterned metal layer formed on the first dielectric layer and partially covering the second gate.

Abstract: An optical package structure includes a light transmittable member, a bonding structural member, and an optical element. The bonding structural member includes a first bonding layer and a second bonding layer to form a light-scattering structure. The first bonding layer is connected to a bonding surface of the light transmittable member. An inner side of the first bonding layer includes a plurality of first protruded portions. An inner side of the second bonding layer includes a plurality of second protruded portions. The second protruded portions and the first protruded portions are arranged in a staggered manner. The bonding structural member includes the first bonding layer or the light-absorption member. The light-absorption member is filled in concaved portions of the first bonding layer. The optical element is connected to the bonding structural member, and is spaced apart from the light transmittable member.

Abstract: An optical package structure and a method for manufacturing the same are provided. The optical package structure includes an optical element, a bonding structural member, and a light transmittable member. The bonding structural member is bonded to a surface of the optical element. The bonding structural member includes a first bonding layer, a light-absorption layer, and a second bonding layer. The first bonding layer and the second bonding layer are made of an opaque material. The light-absorption layer is disposed between the first bonding layer and the second bonding layer. The light transmittable member is bonded to the bonding structural member and spaced apart from the optical element. The light-absorption layer is configured to absorb light emitted to the bonding structural member.

Abstract: A method for manufacturing a nanosheet semiconductor device includes: forming a liner layer to cover first and second fin structures, each of the fin structures including a stacked structure, a poly gate disposed on the stacked structure, and inner spacers, the stacked structure including sacrificial features covered by the inner spacers, and channel features disposed to alternate with the sacrificial features; forming a dielectric layer to cover the liner layer, the dielectric layer including an upper portion, a lower portion, and an interconnecting portion that interconnects the upper and lower portions and that laterally covers the liner layer; subjecting the upper and lower portions to a directional treatment; and removing the upper and interconnecting portions of the dielectric layer and a portion of the liner layer, to form a liner and a bottom dielectric insulator disposed on the liner.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, a light-permeable layer, an adhesive layer having a ring-shape and sandwiched between the sensor chip and the light-permeable layer, and an encapsulant formed on the substrate. The adhesive layer has two adhering surfaces having a same area and a middle cross section located at a middle position between the two adhering surfaces. An area of the middle cross section is 115% to 200% of an area of any one of the two adhering surfaces. The adhesive layer can provide for light to travel therethrough, and enables the light therein to change direction and to attenuate. The sensor chip, the adhesive layer, and the light-permeable layer are embedded in the encapsulant, and an outer surface of the light-permeable layer is at least partially exposed from the encapsulant.