Abstract: An auscultation device includes an electrocardiogram (ECG) device, a sound receiver device, a synchronization device and a processor. The ECG device is configured to receive an ECG signal. The sound receiver device is configured to receive a heart sound signal. The synchronization device is configured to transmit a synchronization signal to the ECG device and the sound receiver device, so that the ECG device starts to receive the ECG signal and the sound receiver device starts to receive the heart sound signal in time synchronization. Moreover, the processor is configured to generate an ECG according to the ECG signal, generate a heart sound diagram according to the heart sound signal, and generate a synchronization timing diagram according to the ECG and the heart sound diagram.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: A laser device includes a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, a first insulating layer, a plurality of hole fillings, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer are stacked in sequence to form an epitaxy structure. The epitaxy structure has a first platform, the first platform has multiple holes to form a photonic crystal structure. The first insulating layer is over an upper surface and a sidewall surface of the first platform, wherein the first insulating layer has a first aperture corresponding to the photonic crystal structure. The hole fillings are respectively filled in the holes. The first electrode is over the photonic crystal structure. The second electrode is electrically connected to the first waveguiding layer.

Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

Abstract: A method of manufacturing a casing of an electronic device including the following steps is provided. A metallic housing is provided, wherein the metallic housing has an inner surface and an outer surface opposite to the inner surface and includes a back region and at least one side region. At least one gap, a plurality of apertures and a non-conductive layer are formed on the inner surface of the metallic housing, wherein the apertures is formed on a surface of the at least one gap, part of the non-conductive layer is formed in the at least one gap and extended from the back region to the at least one side region, and part of the non-conductive layer is extended into the apertures. Part of the metallic housing is removed for exposing part of the non-conductive layer, thereby forming a plurality of non-conductive spacers located in the at least one gap.

Abstract: The present disclosure provides a method for detecting the focus of attention. The method includes: obtaining the face of a person in the first image, as well as the result of facial recognition; determining whether the distance between the person and the target is within an effective attention range; determining whether the face is frontal; determining whether the effective attention period is not shorter than a period threshold; detecting the focus of attention for the person to the target.

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Abstract: The disclosure provides a method and a host for adjusting audio of speakers, and a computer readable medium. The method includes: controlling a far-field speaker to play a first audio signal; controlling an audio receiver to receive the first audio signal from the far-field speaker and accordingly positioning a speaker location of the far-field speaker; establishing a first hearing transfer function related to the far-filed speaker based on the speaker location of the far-filed speaker; controlling the far-field speaker to play a second audio signal based on a second hearing transfer function; controlling the audio receiver to receive the second audio signal and accordingly estimating a first reference hearing volume; obtaining a second reference hearing volume corresponding to a first near-field speaker; and adjusting a first volume of the far-field speaker based on the first reference hearing volume and the second reference hearing volume.

Abstract: The disclosure provides a method and a host for adjusting audio of speakers, and a computer readable medium. The method includes: controlling a far-field speaker to play a first audio signal; controlling an audio receiver to receive the first audio signal from the far-field speaker and accordingly positioning a speaker location of the far-field speaker; establishing a first hearing transfer function related to the far-filed speaker based on the speaker location of the far-filed speaker; controlling the far-field speaker to play a second audio signal based on a second hearing transfer function; controlling the audio receiver to receive the second audio signal and accordingly estimating a first reference hearing volume; obtaining a second reference hearing volume corresponding to a first near-field speaker; and adjusting a first volume of the far-field speaker based on the first reference hearing volume and the second reference hearing volume.

Abstract: A non-contact elevator control system having a control panel with multiple buttons, an image processor, a first and a second camera module, wherein the first and second camera modules are arranged at two adjacent corners of the control panel, is disclosed. When an object enters a detection range, the image processor obtains a first imaging position of the object based on a first image taken by the first camera module and a second imaging position of the object based on a second image taken by the second camera module. The image processor calculates the corresponding position of the object in the control panel according to the first and the second imaging positions, and the relative position information of the first and second imaging positions with respect to the first and second camera modules. The image processor triggers a corresponding button in the control panel based on the position.

Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.

Abstract: A method of removing raindrops from video images is provided. The method includes the steps of: training a raindrop image recognition model using a plurality raindrop training images labeled in a plurality of rainy-scene images; recognizing a plurality of raindrop images from a plurality of scene images in a video sequence using the raindrop image recognition model; and in response to a specific raindrop image in a current scene image satisfying a predetermined condition, replacing the specific raindrop image in the current scene image with an image region corresponding to the specific raindrop image in a specific scene image prior to the current scene image to generate an output scene image.

Abstract: A magnetic conductive substrate is provided and is used for wireless charging or wireless communication. The magnetic conductive substrate includes a first magnetic conductive layer, a second magnetic conductive layer, and a third magnetic conductive layer. The first magnetic conductive layer has a first magnetic permeability, the second magnetic conductive layer has a second magnetic permeability, and the third magnetic conductive layer has a third magnetic permeability. The second magnetic conductive layer is disposed between the first magnetic conductive layer and the third magnetic conductive layer, the first magnetic permeability is different from the second magnetic permeability, and the second magnetic permeability is different from the third magnetic permeability.

Abstract: Integrated semiconductor devices and method of making the integrated semiconductor are disclosed. The integrated semiconductor device may include a first transistor comprising a first gate and at least one first active region, a second transistor comprising a second gate and at least one second active region, wherein the second transistor is spaced a first distance from the first transistor, a dielectric sidewall spacer formed on a gate sidewall of the first transistor and a gate sidewall of the second transistor, a first dielectric layer formed over the first transistor and the second transistor, wherein a thickness of the first dielectric layer is greater than half the first distance, and a patterned metal layer formed on the first dielectric layer and partially covering the second gate.

Abstract: A semiconductor device with densified dielectric structures and a method of fabricating the same are disclosed. The method includes forming a fin structure, forming an isolation structure adjacent to the fin structure, forming a source/drain (S/D) region on the fin structure, depositing a flowable dielectric layer on the isolation structure, converting the flowable dielectric layer into a non-flowable dielectric layer, performing a densification process on the non-flowable dielectric layer, and repeating the depositing, converting, and performing to form a stack of densified dielectric layers surrounding the S/D region.

Abstract: An electrically pumped photonic-crystal surface-emitting laser, the epitaxy structure has a first mesa, the first mesa has multiple air holes and forming a photonic crystal structure, the epitaxy structure further has a second mesa, the second mesa and photonic crystal structure is facing the same direction; a first metal electrode arranged on the insulating layer, and covering the photonic crystal structure; a second metal electrode arranged on the second mesa and protruding out of the groove, making the first metal electrode and the second metal electrode face the same direction; and further make the first metal electrode connect to the first connecting metal and make the second metal electrode connect to the second connecting metal for making the photonic crystal structure become flip chip.

Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

Abstract: A method of manufacturing a casing of an electronic device including the following steps is provided. A metallic housing is provided, wherein the metallic housing has an inner surface and an outer surface opposite to the inner surface and includes a back region and at least one side region. At least one gap, a plurality of apertures and a non-conductive layer are formed on the inner surface of the metallic housing, wherein the apertures is formed on a surface of the at least one gap, part of the non-conductive layer is formed in the at least one gap and extended from the back region to the at least one side region, and part of the non-conductive layer is extended into the apertures. Part of the metallic housing is removed for exposing part of the non-conductive layer, thereby forming a plurality of non-conductive spacers located in the at least one gap.

Abstract: A photonic crystal surface emitting laser device including at least one photonic crystal surface emitting laser unit is provided. The photonic crystal surface emitting laser unit includes a light-emitting layer, a photonic crystal layer, a doped semiconductor layer, and a diffractive grating. The light-emitting layer is configured to emit a light beam. The photonic crystal layer is disposed on one side of the light-emitting layer. The doped layer is disposed on another side of the light-emitting layer. The diffractive grating is disposed on the photonic crystal layer or the doped semiconductor layer.

Abstract: A metallic housing of an electronic device including an inner surface, an outer surface and a first non-conductive spacer is provided. The outer surface is opposite to the inner surface, and the outer surface has a back side and lateral sides connecting with the back side. The inner surface is substantially a recessed structure. The metallic housing having a first gap and a second gap substantially located at two opposite ends of the metallic housing and being parallel with each other. The first gap and the second gap each communicates the inner surface and the outer surface. The first non-conductive spacer is disposed the first gap of the metallic housing.