Abstract: A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a light-transmissive conducting layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has multiple holes to form a photonic crystal structure. The insulating layer is over an upper surface and a sidewall surface of the first platform, and over an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, and the active layer. The light-transmissive conducting layer connects to the photonic crystal structure through an aperture of the insulating layer. The first electrode has an opening corresponding to the aperture. The second electrode is under the substrate.

Abstract: A device, apparatus, and method for semiconductor transfer are provided. A transfer substrate is controlled to be moved to be above the target substrate. An infrared emitting portion emits infrared signals to position a semiconductor on a target substrate. After a second magnetic portion picks up the semiconductor from the target substrate, a controller outputs a first control current to a first electromagnetic portion to cause the first electromagnetic portion to generate an electromagnetic force, to control the second magnetic portion to adjust a position of the picked-up semiconductor relative to the welding position on the target substrate, where adjusting the position of the picked up semiconductor includes horizontal adjustment.

Abstract: A wireless device is provided and includes a substrate, a first coil and a second coil. The first coil is configured to be wound around a first axis, and the first coil is disposed on the substrate and is configured to operate in a wireless charging mode. The second coil is disposed on the substrate and configured to operate in a wireless communication mode. The wires of the second coil partially overlap the wires of the first coil.

Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.

Abstract: An air filtration system includes a main body having a flow path; a first filter portion provided on the flow path and having a first body portion; a plurality of protrusions distributed and disposed on the first body portion; and a plurality of first through holes passing through the first body portion and interposed between the adjacent protrusions; wherein when an external fluid flows in the flow path, the external fluid passes through the protrusions first and then passes through each of the first through holes, so that the flowing external fluid is hindered by the protrusions, and thus a flow velocity at a position adjacent to the protrusions is lower than a flow velocity flowing through the first through holes, thereby vortices are respectively generated between orifices of the first through holes and the adjacent protrusions.

Abstract: A wireless device is provided and includes a substrate, a first coil and a second coil. The first coil is configured to be wound around a first axis, and the first coil is disposed on the substrate and is configured to operate in a wireless charging mode. The second coil is disposed on the substrate and configured to operate in a wireless communication mode. The wires of the second coil partially overlap the wires of the first coil.

Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.

Abstract: A method of automatically triggering scanning operation through specific motion includes steps as follows. A specific motion trajectory of a scanning device is sensed to determine whether the scanning device is moved along a predetermined path. If so, an image sensor of the scanning device is switched on. A determination is made as to whether the scanning device is moved down to a lower position. If so, the image sensor of the scanning device is switched off.

Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

Abstract: A light source module, a projector using the same and a light source control method are disclosed. The light source module includes a laser light source, a temperature sensor, a light source driver and a controller. The temperature sensor is adjacent to the light source and configured to sense a light source temperature of the laser light source. The controller is configured to: (1) determine whether the light source temperature reaches a first temperature value; (2) if yes, control the light source driver to drive the laser light source to illuminate by a first current; (3) determine whether the light source temperature changes from the first temperature value to a second temperature value different from the first temperature value; and, (4) if yes, control the light source driver to drive the laser light source to illuminate by a second current different from the first current.

Abstract: A processing unit performs multiply-and-accumulate (MAC) operations on asymmetrically quantized data. The processing unit includes a MAC hardware unit to perform the MAC operations on a first data sequence and a second data sequence to generate an asymmetric MAC output. Both the first data sequence and the second data sequence are asymmetrically quantized. The processing unit further includes an accumulator hardware unit to accumulate the first data sequence concurrently with the MAC operations to generate an accumulated output. The processing unit further includes a multiply-and-add (MAD) hardware unit to multiply the accumulated output with a second offset to generate a multiplication output, and to add the multiplication output, the asymmetric MAC output and a pre-computed value calculated before runtime to generate a final output. The second offset indicates an amount of asymmetry of the second data sequence with respect to zero.

Abstract: A casing of an electronic device including a metallic housing, a first non-conductive spacer and a second non-conductive spacer is provided. The metallic housing has an inner surface and an outer surface opposite to the inner surface, and the outer surface has a back side and lateral sides connecting with the back side. The inner surface is substantially a recessed structure. The metallic housing having a first gap and a second gap substantially located at two opposite ends of the metallic housing and being parallel with each other. The first non-conductive spacer is disposed the first gap, and the second non-conductive spacer is disposed in the second gap.

Abstract: A metallic housing of an electronic device including an inner surface, an outer surface and a first non-conductive spacer is provided. The outer surface is opposite to the inner surface, and the outer surface has a back side and lateral sides connecting with the back side. The inner surface is substantially a recessed structure. The metallic housing having a first gap and a second gap substantially located at two opposite ends of the metallic housing and being parallel with each other. The first gap and the second gap each communicates the inner surface and the outer surface. The first non-conductive spacer is disposed the first gap of the metallic housing.

Abstract: An image capturing device used to capture an image of an object is provided. The image capturing device includes a camera, a first light source and a controller. The first light source is disposed adjacent to the camera. The controller is electrically connected to the camera and the first light source and is configured to: control the camera to capture a first picture of the object under the condition that the first light source does not emit any light; control the camera to captures a second picture of the object under the condition that the first light source emits a light; subtract the first picture from the second picture to filter off the background brightness of the second picture to obtain a first filtered picture; and analyze the first filtered picture to obtain a probability of the object matching a certain state.

Abstract: A method and a system for digital direct imaging, an image generating method and an electronic device are provided. The method for digital direct imaging includes: obtaining a first image of a first format; converting the first image into a second image of a second format, wherein the second image includes a contour description; generating a correction parameter according to at least one mark on a substrate; correcting the second image according to the contour description and the correction parameter; and performing a rasterization operation on the corrected second image and imaging the second image processed by the rasterization operation on the substrate by an exposure device.

Abstract: An evaporation apparatus including a material source, a chamber, a passageway, and a heating component is provided. The material source is configured to provide a deposition material. The chamber includes a manifold. The passageway is configured to be connected to the material source and the manifold. The heating component is disposed in at least a portion of the passageway and configured to heat the deposition material. A calibration method of the evaporation apparatus is also provided.

Abstract: A semiconductor device and method for making the semiconductor device comprising a flash memory cell is provided. In accordance with some embodiments, the method includes: patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer; forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material; etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer; and etching the gate insulating film and the first gate material layer so as to form a plurality of gate structures.

Abstract: An active array substrate includes a substrate and a plurality of pixel structure disposed on the substrate. Each of the pixel structure includes a scan line, a data line, and a pixel electrode. The scan line is disposed on the substrate and extending along a first direction. The data line is disposed on the substrate and extending along a second direction. The first direction crosses the second direction. The data line and the scan line define a pixel region and a first cutting clearance region. The pixel electrode is disposed on the substrate and includes a first portion and a second portion. The first portion is on the pixel region. The second portion is on the first cutting clearance region. A normal projection of the second portion onto the substrate does not overlap a normal projection of the data line onto the substrate.

Abstract: A lens includes a casing, a first lens group, a second lens group and a heat dissipating member. The first lens group is disposed in the casing and close to a first side of the casing. The second lens group is disposed in the casing and close to a second side of the casing, wherein the first side is opposite to the second side. The heat dissipating member is disposed at the second side of the casing and contacts the casing.