Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.

Abstract: Provided is a stainless steel powder composition, which comprises Cr, Cu, Mn, Mo, Ni and Fe; wherein, based on a total weight of the stainless steel powder composition, a content of Cr is 20 wt% to 24 wt%, and a content of Cu is more than 0 wt% and less than or equal to 0.5 wt%, a content of Mn is more than 0 wt% and less than or equal to 2 wt%, a content of Mo is 2.25 wt% to 3 wt% and a content of Ni is 10 wt% to 15 wt%. When applying the stainless steel powder composition of the present invention to laser additive manufacturing (LAM), the produced stainless steel workpiece has enhanced tensile strength, thereby expanding the follow-up applications and increasing the commercial value.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: The invention provides an iron-based metallic glass alloy powder including: Fe as the main component; a metalloid element group including Si, B, and C; a small amount of Mo to improve the degree-of-supercooling; and the addition of Cr and Ni to increase corrosion resistance, where the total amount of the metalloid element group, the amount of the degree-of-supercooling improvement element and the total amount of the elements to increase corrosion resistance are set within predetermined ranges.

Abstract: Provided herein are GLP-1 receptor modulator compounds, pharmaceutical compositions, methods of their preparation, and methods of their use in treatment, and/or diagnosis.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: Provided herein are GLP-1 receptor modulator compounds, pharmaceutical compositions, methods of their preparation, and methods of their use in treatment, and/or diagnosis.

Abstract: A method for manufacturing a radial or azimuthal polarization conversion component comprises the steps of: placing a holographic recording material between two right-angle prisms, wherein the holographic recording material is divided into at least four sector-shaped areas and is partially shielded, and only one of the sector-shaped areas is exposed each time; allowing a recording light to pass through the right-angle prisms and the exposed sector-shaped area of the holographic recording material and to interfere with a reflected object light on the holographic recording material; rotating the holographic recording material to expose the other sector-shaped areas one by one to be constructed for manufacturing volume holograms with diffraction angles of 48.19 degrees, 60 degrees or about 85 degrees.

Abstract: An apparatus for manufacturing a radial or azimuthal polarization conversion component includes a reflector having a truncated cone shape. The reflector has a top portion, a bottom portion, and a circumferential portion connected between the top portion and the bottom portion.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: Described herein are CD73 inhibitors and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer, infections, and neurodegenerative diseases.

Abstract: An optical wireless unit including an optical circulator, a collimator, and a lens is provided. The collimator is configured to receive an optical signal via a first port of the optical circulator. The collimator is coupled with a second port of the optical circulator and is configured to transmit the optical signal into air to form a first free space optical wireless signal. The lens is coupled with the collimator and a third port of the optical circulator and is configured to receive and focus a second free space optical wireless signal to the collimator. The first free space optical wireless signal has a wavelength ?0, the second free space optical wireless signal has a wavelength ?N, and N is a positive integer.

Abstract: A deslagging device has an assembling rod and a deslagging plate. The assembling rod has a mounting head and an assembling section connected to the mounting head. The deslagging plate is mounted to the assembling rod and has a plate mounted to the assembling section and having a first face, a second face, and multiple conical channels. The first face and the second face face to opposite directions. The first face faces to the mounting head. The multiple conical channels are defined through the plate and spaced apart from one another. Each one of the multiple conical channels has a first opening and a second opening. The first opening is formed in the first face of the plate and has a diameter. The second opening is formed in the second face of the plate and has a diameter larger than the diameter of the first opening.

Abstract: A method of fabricating a metal gate structure in a semiconductor device is disclosed. The method comprises removing a dummy poly gate, removing IL oxide and STI using a dry etch process and a wet lateral etch process to form a T-shape void in the semiconductor device, and depositing metal gate material in the T-shape void to form a T-shape structure in a metal gate line-end. A semiconductor device fabricated from a process that included the removal of a dummy poly gate is disclosed. The semiconductor device comprises an OD fin and a metal gate fabricated above a section of the OD fin and adjacent to a side section of the OD fin. The metal gate has a T-shape structure in a metal gate line-end. The T-shape structure was formed by removing IL oxide and STI using a dry and a wet lateral etch process to form a T-shape void.