Abstract: A method for forming a patterned mask layer is provided. The method includes forming a layer over a substrate. The method includes forming a first strip structure and a second strip structure over the layer. The method includes forming a spacer layer over the first strip structure, the second strip structure, and the layer. The method includes forming a third strip structure and a fourth strip structure between the first strip part and the second strip part. The connecting part is between the third strip structure and the fourth strip structure. The method includes removing the spacer layer. The first strip structure, the second strip structure, the third strip structure, and the fourth strip structure together form a patterned mask layer.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.

Abstract: A method for forming a semiconductor structure includes forming first mandrels over a target layer. The method for forming a semiconductor structure also includes forming a first opening to cut off one of the first mandrels. The method for forming a semiconductor structure also includes forming a spacer layer over the first mandrels. The method for forming a semiconductor structure also includes forming second mandrels over the spacer layer and between the first mandrels. The method for forming a semiconductor structure also includes forming a second opening to cut off one of the second mandrels. The method for forming a semiconductor structure also includes etching the spacer layer. The method for forming a semiconductor structure also includes etching the target layer.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.

Abstract: A method includes bonding a front side surface of a first wafer to a front side of a second wafer; forming a bonding material on a periphery of the first wafer and a periphery of the second wafer; performing a thinning process on the first wafer from a back side surface of the first wafer; after performing the thinning process, performing a trimming process from the back side surface of the first wafer to remove a first portion of the bonding material and partially trim down the periphery of the second wafer from a front side surface of the second wafer.

Abstract: A method for manufacturing a semiconductor device includes depositing a hard mask layer on an upper surface of an insulating layer. The hard mask layer is etched to form an opening in the hard mask layer. A via recess is formed in the insulating layer through the opening. A first photoresist layer is formed on the hard mask layer and in the via recess. The first photoresist layer is etched to form a photoresist plug in the via recess. Two opposite sides of the opening are etched to remove portions of the hard mask layer and thereby a portion of the upper surface of the insulating layer is exposed. The photoresist plug is removed. Metal is deposited in the via recess and on the exposed surface of the insulating layer. The metal is patterned.

Abstract: A method for manufacturing a semiconductor device includes depositing a hard mask layer on an upper surface of an insulating layer. The hard mask layer is etched to form an opening in the hard mask layer. A via recess is formed in the insulating layer through the opening. A first photoresist layer is formed on the hard mask layer and in the via recess. The first photoresist layer is etched to form a photoresist plug in the via recess. Two opposite sides of the opening are etched to remove portions of the hard mask layer and thereby a portion of the upper surface of the insulating layer is exposed. The photoresist plug is removed. Metal is deposited in the via recess and on the exposed surface of the insulating layer. The metal is patterned.

Abstract: A method of defining a pattern includes forming a plurality of cut shapes and a first plurality of openings within a first layer of a multi-layer hard mask to expose first portions of the second layer. A plurality of etch stops is formed by implanting an etch rate modifying species in a portion of the plurality of cut shapes. The first layer is directionally etched at the plurality of cut shapes such that the plurality of etch stops remain. A spacer layer is formed on the first layer and the first portions. A second plurality of openings is formed within the spacer layer to expose second portions of the second layer. The spacer layer is directionally etched to remove the spacer layer from sidewalls of the plurality of etch stops. Portions of the second layer exposed through the first plurality of openings and the second plurality of openings are etched.

Abstract: A method includes bonding a front side surface of a first wafer to a second wafer; performing a multi-trimming process on the first and second wafers from a back side surface of the first wafer, the multi-trimming process comprising: performing a first trimming step from the back side surface of the first wafer to cut through a periphery of the first wafer; performing a second trimming step on the second wafer to partially cut a periphery of the second wafer to form a first step-like structure; and performing a third trimming step on the second wafer to partially cut the periphery of the second wafer to form a second step-like structure connecting down from the first step-like structure; after performing the multi-trimming process, forming a coating material at least over the periphery of the second wafer.

Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: A method of defining a pattern includes forming a plurality of cut shapes and a first plurality of openings within a first layer of a multi-layer hard mask to expose first portions of the second layer. A plurality of etch stops is formed by implanting an etch rate modifying species in a portion of the plurality of cut shapes. The first layer is directionally etched at the plurality of cut shapes such that the plurality of etch stops remain. A spacer layer is formed on the first layer and the first portions. A second plurality of openings is formed within the spacer layer to expose second portions of the second layer. The spacer layer is directionally etched to remove the spacer layer from sidewalls of the plurality of etch stops. Portions of the second layer exposed through the first plurality of openings and the second plurality of openings are etched.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.

Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: A method for manufacturing a semiconductor device includes depositing a hard mask layer on an upper surface of an insulating layer. The hard mask layer is etched to form an opening in the hard mask layer. A via recess is formed in the insulating layer through the opening. A first photoresist layer is formed on the hard mask layer and in the via recess. The first photoresist layer is etched to form a photoresist plug in the via recess. Two opposite sides of the opening are etched to remove portions of the hard mask layer and thereby a portion of the upper surface of the insulating layer is exposed. The photoresist plug is removed. Metal is deposited in the via recess and on the exposed surface of the insulating layer. The metal is patterned.

Abstract: A method for forming a patterned mask layer is provided. The method includes forming a layer over a substrate. The method includes forming a first strip structure and a second strip structure over the layer. The method includes forming a spacer layer over the first strip structure, the second strip structure, and the layer. The method includes forming a third strip structure and a fourth strip structure between the first strip part and the second strip part. The connecting part is between the third strip structure and the fourth strip structure. The method includes removing the spacer layer. The first strip structure, the second strip structure, the third strip structure, and the fourth strip structure together form a patterned mask layer.

Abstract: A method for manufacturing a semiconductor device includes depositing a hard mask layer on an upper surface of an insulating layer. The hard mask layer is etched to form an opening in the hard mask layer. A via recess is formed in the insulating layer through the opening. A first photoresist layer is formed on the hard mask layer and in the via recess. The first photoresist layer is etched to form a photoresist plug in the via recess. Two opposite sides of the opening are etched to remove portions of the hard mask layer and thereby a portion of the upper surface of the insulating layer is exposed. The photoresist plug is removed. Metal is deposited in the via recess and on the exposed surface of the insulating layer. The metal is patterned.

Abstract: A method for forming a semiconductor structure includes forming first mandrels over a target layer. The method for forming a semiconductor structure also includes forming a first opening to cut off one of the first mandrels. The method for forming a semiconductor structure also includes forming a spacer layer over the first mandrels. The method for forming a semiconductor structure also includes forming second mandrels over the spacer layer and between the first mandrels. The method for forming a semiconductor structure also includes forming a second opening to cut off one of the second mandrels. The method for forming a semiconductor structure also includes etching the spacer layer. The method for forming a semiconductor structure also includes etching the target layer.

Abstract: Provided is a method for manufacturing integrated circuit (IC) devices including the operations of forming a first metal pattern (Mx) on a semiconductor substrate, forming a first via pattern (Vx) on the first metal pattern using an area selective deposition (ASD) that includes first and second vias formed adjacent opposed edges or terminal portions of the first metal pattern, and forming a second metal pattern (Mx+1) on the first via pattern with substantially no pattern overlap to form a zero enclosure and wherein a pair of adjacent vias are separated by a distance corresponding to the smallest end-to-end metal pattern spacing permitted under a set of design rules applied during the design of the IC devices.