Abstract: A system is provided. The system comprises test devices, a transport device and a data processing device. The test devices perform tests different from each other to a memory device and output test results of the tests. The transport device transports the memory device to the test devices and comprises a first storage device. The first storage device stores the test results and a list of a part of test devices that have tested the memory device. The data processing device stores fabrication data of the memory device. When the transport device determines that the memory device is defective according to at least one of the test results, the data processing device generates a report according the at least one of the test results and the fabrication data.

Abstract: The present disclosure provides a memory testing system, including at least one memory device, a power supply, and a processor. The power supply is configured to provide a first reference voltage to the at least one memory device according to a control signal. The processor is configured to provide the control signal to control the power supply to vary the first reference voltage among multiple voltage levels and test the at least one memory device under the voltage levels to generate multiple first testing results corresponding to the voltage levels.

Abstract: A cold plate is provided and includes: a casing formed with an accommodating groove; a base coupled to the casing to define an action space together with the casing, where the action space communicates with the accommodating groove; a heat transfer structure disposed on an inner side of the base for transferring a heat energy generated by a heat source in contact with an outer side of the base to a working medium in the action space; and a pump having a stator disposed in the accommodating groove.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: The present disclosure provides a memory testing system, including at least one memory device, a power supply, and a processor. The power supply is configured to provide a first reference voltage to the at least one memory device according to a control signal. The processor is configured to provide the control signal to control the power supply to vary the first reference voltage among multiple voltage levels and test the at least one memory device under the voltage levels to generate multiple first testing results corresponding to the voltage levels.

Abstract: A heat dissipation device is provided and includes: a casing; a base unit combined with the casing to form a water collecting chamber, a water inlet chamber, an action space and a water outlet chamber; a heat transfer structure disposed on an inner side of the base unit; a water inlet pipeline unit communicated with the water collecting chamber; a water outlet pipeline unit communicated with the water outlet chamber; and a pump unit disposed outside the casing and the base unit, and connected with the water inlet pipeline unit and the water outlet pipeline unit, so as to drive a working medium.

Abstract: A photodetecting device is provided. The photodetecting device includes a silicon substrate, a germanium absorption region, and a plurality of microstructures. The silicon substrate includes a first surface and a second surface. The germanium absorption region is formed proximal to the first surface of the silicon substrate, and the germanium absorption region is configured to absorb photons and to generate photo-carriers. The plurality of microstructures are formed over the second surface of the silicon substrate, and the plurality of microstructures are configured to direct an optical signal towards the germanium absorption region. A system including an optical transmitter and an optical receiver is also provided.

Abstract: The present disclosure relates to a composition for inducing immune response comprising a glycoengineered antibody or antigen-binding fragment thereof that is specific for an antigen portion having a receptor binding domain (RBD) of a surface protein of a virus. The present disclosure also relates to an immune combination and a method for treating an infection by a virus.

Abstract: A two-phase cold plate includes a base, an upper cover, a heat exchange cavity and a cooling fin module. The upper cover is installed on the base, the heat exchange cavity is formed between the base and the upper cover, and the cooling fin module is installed in the heat exchange cavity. The upper cover includes at least one nozzle module and a plurality of two-phase fluid channels. The two-phase fluid channels are respectively located on both sides of the nozzle module, and the nozzle module sprays a heat dissipating fluid to the cooling fin module, and the heat dissipating fluid flows along the cooling fin module to the two-phase fluid channels on both sides of the cooling fin module to cool the cooling fin module.

Abstract: A fluid heat dissipation device includes a first cold plate, a first adapter and a fluid delivery pipeline. The first cold plate is used to cool a first heat source, the first adapter is connected to the first cold plate, and the fluid delivery pipeline is connected to the first adapter and fluidly communicated with the first cold plate to improve the production efficiency and quality of the fluid heat dissipation device.

Abstract: An optical sensing apparatus is provided. The optical sensing apparatus includes a substrate, one or more pixels supported by the substrate, where each of the one or more pixels includes an absorption region, a field control region, a first contact region, a second contact region and a carrier confining region. The field control region and the first contact region are doped with a dopant of a first conductivity type. The second contact region is doped with a dopant of a second conductivity type. The carrier confining region includes a first barrier region and a channel region, where the first barrier region is doped with a dopant of the second conductivity type and has a first peak doping concentration, and where the channel region is intrinsic or doped with a dopant of the second conductivity type and has a second peak doping concentration lower than the first peak doping concentration.

Abstract: A coolant distribution unit includes a casing, a control module, a power supply module, a heat exchange module, an integrated pipe, and a fluid driving module. The power supply module is electrically connected to the control module, the integrated pipe includes a plurality of inlets and an outlet to collect and output a cooled working fluid, the fluid driving module is electrically connected to the control module and the power supply module, and the fluid driving module is in fluid communication with the heat exchange module. The control module, power supply module, heat exchange module, integrated pipe, and fluid driving module are all arranged in the casing.

Abstract: A liquid cooling head includes an upper casing, an impeller, a bottom casing and a skived fin cooling plate. The upper casing has an inlet and an outlet, the upper casing is fixed on the bottom casing, and the impeller is arranged between the upper casing and the skived fin cooling plate. In addition, the skived fin cooling plate is fixed on the bottom casing, and the impeller sucks the heat-dissipating liquid from the inlet and drives the heat-dissipating liquid passing through the skived fin cooling plate, upwardly passing through the impeller and then discharged from the outlet.

Abstract: A bolster is provided and includes a bottom plate including a side plate extending upwards from a side of the bottom plate and a holding portion bending inwards from an edge of the side plate, a pillar vertically provided on the bottom plate and adjacent to the holding portion, and a torsion bar including two end portions and a main body portion, where one of the two end portions is fixed in the pillar and restricted by the holding portion, and the main body portion is restricted by the side plate. The bolster can effectively reduce warpage and deformation of the bottom plate.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: A wafer includes a plurality of testing dies, a plurality of non-testing dies, and a dicing region. Each testing die includes: a first active area including one or more first active devices, and one or more first device pads electrically coupled to the one or more first active devices. Each non-testing die includes: a second active area including one or more second active devices, and one or more second device pads electrically coupled to the one or more second active devices. The dicing region includes one or more testing pads electrically coupled to the one or more first device pads. The one or more testing pads are arranged to receive one or more external probes for determining one or more characteristics of the one or more first active devices of the plurality of testing dies. The plurality of non-testing dies are electrically isolated from the dicing region.

Abstract: A reference voltage generator circuit includes: a first transistor and a second transistor, wherein the first transistor and the second transistor are coupled with each other and are located on a substrate, wherein the first transistor has a first conduction threshold voltage and a first rated voltage, wherein the second transistor has a second conduction threshold voltage and a second rated voltage, wherein the first rated voltage is higher than the second rated voltage; wherein the reference voltage generator circuit is configured to generate a bandgap reference voltage with temperature compensation according to a difference between the first conduction threshold voltage and the second conduction threshold voltage.

Abstract: The present disclosure provides a test system and method. The test system is configured to analyze a system platform and includes a data collector and a test monitor. The data collector is configured to receive a signal transmitted between a controller and a memory of the system platform and is configured to process the signal to generate a processed signal. The test monitor is configured to encode the processed signal into a log information, so as to determine an operation status of the system platform according to the log information.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.