Abstract: In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such thatthe direction (7) in which the thermal shrinkage rate or the coefficient of thermal expansion of the substrate is largest is nonparallel tothe direction (8) of a current flowing through the channel of the thin film transistor. Then, a thin film transistor having stable and uniform electrical characteristics, which is formed on the plastic film substrate, is provided.

Abstract: In a structure fabrication method for fabricating a structure including an inclined part inclined to a principal plane of a substrate by plastically deforming a work piece having the substrate with the principal plane, the structure fabrication method includes the steps of providing in the work piece a projection configured to protrude from a first surface and away from the principal plane of the substrate; and bending the work piece toward a second surface opposite to the first surface. The bending is accomplished by applying a force on a block including an inclined pressure plane that is abutted on the projection for plastically deforming the work piece, in which in bending the work piece, the direction of a first force applied on the work piece intersects with the direction of a second force of the inclined pressure plane pushing the projection.

Abstract: A structure fabricating method plastically deforms a target portion of a substrate, to thereby fabricate a structure having an inclined segment that is inclined relative to a principal surface of the substrate. The method includes forming a projection on the target portion to project from the principal surface of the substrate or from an opposing surface of the substrate on the side opposite to the principal surface, and applying a force to the projection to plastically deform the target portion such that the target portion is bent in a direction from one surface of the substrate on the side where the projection is formed, toward another surface on the side opposite to the one surface.

Abstract: Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.

Abstract: Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.