Patents by Inventor Chih-An Wei
Chih-An Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240154015Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.Type: ApplicationFiled: March 22, 2023Publication date: May 9, 2024Inventors: Jui-Lin CHEN, Hsin-Wen SU, Chih-Ching WANG, Chen-Ming LEE, Chung-I YANG, Yi-Feng TING, Jon-Hsu HO, Lien-Jung HUNG, Ping-Wei WANG
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Patent number: 11978802Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.Type: GrantFiled: December 13, 2018Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Wei Hsu, Chih-Hao Wang, Huan-Chieh Su, Wei-Hao Wu, Zhi-Chang Lin, Jia-Ni Yu
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Patent number: 11978809Abstract: A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.Type: GrantFiled: June 27, 2022Date of Patent: May 7, 2024Assignee: AMAZING MICROELECTRONIC CORP.Inventors: Chih-Wei Chen, Kuan-Yu Lin, Kun-Hsien Lin
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Patent number: 11979593Abstract: Method and apparatus for affine CPMV or ALF refinement are mentioned. According to this method, statistical data associated with the affine CPMV or ALF refinement are collected over a picture area. Updated parameters for the affine CPMV refinement or the ALF refinement are then derived based on the statistical data, where a process to derive the updated parameters includes performing multiplication using a reduced-precision multiplier for the statistical data. The reduced-precision multiplier truncates at least one bit of the mantissa part. In another embodiment, the process to derive the updated parameters includes performing reciprocal for the statistical data using a lookup table with (m?k)-bit input by truncating k bits from the m-bit mantissa part, and contents of the lookup table includes m-bit outputs. m and k are positive integers.Type: GrantFiled: April 25, 2022Date of Patent: May 7, 2024Assignee: MEDIATEK INC.Inventors: Shih-Chun Chiu, Tzu-Der Chuang, Ching-Yeh Chen, Chun-Chia Chen, Chih-Wei Hsu, Yu-Wen Huang
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Patent number: 11978782Abstract: The present disclosure relates to a hybrid integrated circuit. In one implementation, an integrated circuit may have a first region with a first gate structure having a ferroelectric gate dielectric, at least one source associated with the first gate of the first region, and at least one drain associated with the first gate structure of the first region. Moreover, the integrated circuit may have a second region with a second gate structure having a high-? gate dielectric, at least one source associated with the second gate structure of the second region, and at least one drain associated with the second gate structure of the second region. The integrated circuit may further have at least one trench isolation between the first region and the second region.Type: GrantFiled: June 9, 2022Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chi-Yi Chuang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11978497Abstract: Disclosed is a DDR SDRAM signal calibration device capable of adapting to the variation of voltage and/or temperature. The device includes: an enablement signal setting circuit configured to generate data strobe (DQS) enablement setting; a signal gating circuit configured to generate a DQS enablement setting signal and a DQS enablement signal according to the DQS enablement setting and then output a gated DQS signal according to the DQS enablement signal and a DQS signal; and a calibration circuit configured to generate a first delay signal according to the DQS enablement setting signal and generate a second delay signal according to the first delay signal, the calibration circuit further configured to generate a calibration signal according to the first and second delay signals and the DQS signal. The enablement signal setting circuit maintains or adjusts the DQS enablement setting according to the calibration signal.Type: GrantFiled: November 17, 2021Date of Patent: May 7, 2024Assignee: REALTEK SEMICONDUCTOR CORPORATIONInventors: Kuo-Wei Chi, Chun-Chi Yu, Chih-Wei Chang, Ger-Chih Chou
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Patent number: 11975794Abstract: Various personal mobility vehicles, such as scooters, are disclosed. The scooter can include at least one battery and motor for powering at least one driven wheel. The vehicle can include a gear assembly to convert a torque produced by the motor to a different torque to a driven shaft to power the at least one driven wheel. The battery can be removable.Type: GrantFiled: January 31, 2019Date of Patent: May 7, 2024Assignee: Razor USA LLCInventors: Joey Chih-Wei Huang, Robert Chen
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Patent number: 11978511Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.Type: GrantFiled: January 21, 2022Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yung-Huei Lee, Chun-Wei Chang, Jian-Hong Lin, Wen-Hsien Kuo, Pei-Chun Liao, Chih-Hung Nien
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Patent number: 11976965Abstract: An optical detector module can be used to implement proximity sensing function by detecting ambient light outside of the optical detector module in accordance with a first detection threshold. An optical detector module can be further used to implement other active functions such as material detection (e.g., skin) or depth-sensing by emitting one or more optical signals (e.g., light pulses at a specific wavelength) and detecting the reflected optical signals relative to a second and/or third detection threshold. The disclosure provides technical solutions for actively monitoring detection threshold(s) of an optical detector module to achieve better power management. In some embodiments, such solutions are useful for photodetectors having a wide sensing bandwidth, such as a photodetector formed in germanium or a photodetector comprising an absorption region comprising germanium.Type: GrantFiled: April 27, 2022Date of Patent: May 7, 2024Assignee: Artilux, Inc.Inventors: Kai-Wei Chiu, Chih-Wei Chen, Chih-Wei Yeh
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Patent number: 11978833Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.Type: GrantFiled: December 1, 2021Date of Patent: May 7, 2024Assignee: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Senpeng Huang, Junpeng Shi, Weng-Tack Wong, Shunyi Chen, Zhenduan Lin, Chih-wei Chao, Chen-ke Hsu
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Patent number: 11979613Abstract: Encoding methods and apparatuses include receiving input video data of a current block in a current picture and applying a Cross-Component Adaptive Loop Filter (CCALF) processing on the current block based on cross-component filter coefficients to refine chroma components of the current block according to luma sample values. The method further includes signaling two Adaptive Loop Filter (ALF) signal flags and two CCALF signal flags in an Adaptation Parameter Set (APS) with an APS parameter type equal to ALF or parsing two ALF signal flags and two CCALF signal flags from an APS with an APS parameter type equal to ALF, signaling or parsing one or more Picture Header (PH) CCALF syntax elements or Slice Header (SH) CCALF syntax elements, wherein both ALF and CCALF signaling are present either in a PH or SH, and encoding or decoding the current block in the current picture.Type: GrantFiled: June 28, 2022Date of Patent: May 7, 2024Assignee: HFI INNOVATION INC.Inventors: Ching-Yeh Chen, Olena Chubach, Chen-Yen Lai, Tzu-Der Chuang, Chih-Wei Hsu, Yu-Wen Huang
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Patent number: 11980016Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.Type: GrantFiled: July 20, 2022Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Chuan Yang, Chia-Hao Pao, Yu-Kuan Lin, Lien-Jung Hung, Ping-Wei Wang, Shih-Hao Lin
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Publication number: 20240145421Abstract: Provided are a passivation layer for forming a semiconductor bonding structure, a sputtering target making the same, a semiconductor bonding structure and a semiconductor bonding process. The passivation layer is formed on a bonding substrate by sputtering the sputtering target; the passivation layer and the sputtering target comprise a first metal, a second metal or a combination thereof. The bonding substrate comprises a third metal. Based on a total atom number of the surface of the passivation layer, O content of the surface of the passivation layer is less than 30 at %; the third metal content of the surface of the passivation layer is less than or equal to 10 at %. The passivation layer has a polycrystalline structure. The semiconductor bonding structure sequentially comprises a first bonding substrate, a bonding layer and a second bonding substrate: the bonding layer is mainly formed by the passivation layer and the third metal.Type: ApplicationFiled: October 27, 2023Publication date: May 2, 2024Inventors: Kuan-Neng CHEN, Zhong-Jie HONG, Chih-I CHO, Ming-Wei WENG, Chih-Han CHEN, Chiao-Yen WANG, Ying-Chan HUNG, Hong-Yi WU, CHENG-YEN HSIEH
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Publication number: 20240145919Abstract: An antenna module includes a first metal plate and a frame body. The frame body surrounds the first metal plate. The frame body includes a first antenna radiator, a second antenna radiator, a third antenna radiator, a first breakpoint and a second breakpoint. The first antenna radiator includes a first feeding end and excites a first frequency band. The second antenna radiator includes a second feeding end and excites a second frequency band. The third antenna radiator includes a third feeding end and excites a third frequency band. The first breakpoint is located between the first antenna radiator and the second antenna radiator. The second breakpoint is located between the second antenna radiator and the third antenna radiator. An electronic device including the above-mentioned antenna module is also provided.Type: ApplicationFiled: September 6, 2023Publication date: May 2, 2024Applicant: PEGATRON CORPORATIONInventors: Chien-Yi Wu, Shih-Keng Huang, Chao-Hsu Wu, Chih-Wei Liao, Sheng-Chin Hsu, Hao-Hsiang Yang, Tse-Hsuan Wang
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Publication number: 20240145878Abstract: An electrode structure of rechargeable battery includes a battery tab stack, an electrode lead, a welding protective layer and a welding seam. The battery tab stack is formed by extension of a plurality of electrode sheets. The electrode lead is joined to one side of the battery tab stack. The welding protective layer is joined to another side of the battery tab stack opposite to the electrode lead. The welding seam extends from the welding protective layer to the electrode lead through the battery tab stack.Type: ApplicationFiled: November 29, 2022Publication date: May 2, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kun-Tso CHEN, Tsung-Ying TSAI, Tsai-Chun LEE, Chih-Wei CHIEN, Hui-Ta CHENG
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Publication number: 20240143791Abstract: The invention introduces an apparatus for detecting errors during data encryption. The apparatus includes a search circuitry and a substitution check circuitry. The key generation circuitry is arranged operably to convert a first value of one byte corresponding to a plaintext, an intermediate encryption result, or a round key into a second value of a K-bit according to an 8-to-K lookup table, where K is an integer ranging from 10 to 15 and the second value comprises (K minus 8) bits of a Hamming parity. The substitution check circuitry is arranged operably to employ check formulae corresponding to the 8-to-K lookup table to determine whether an error is occurred during a conversion of the first value of the one byte into the second value of the K-bit, and output an error signal when finding the error, where a total amount of the formulae is K minus 8.Type: ApplicationFiled: May 30, 2023Publication date: May 2, 2024Applicant: Silicon Motion, Inc.Inventors: Wun-Jhe WU, Po-Hung CHEN, Chiao-Wen CHENG, Jiun-Hung YU, Chih-Wei LIU
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Publication number: 20240145380Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai
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Publication number: 20240145403Abstract: An electronic package is provided, in which electronic elements and at least one packaging module including a semiconductor chip and a shielding structure covering the semiconductor chip are disposed on a carrier structure, an encapsulation layer encapsulates the electronic elements and the packaging module, and a shielding layer is formed on the encapsulation layer and in contact with the shielding structure. Therefore, the packaging module includes the semiconductor chip and the shielding structure and has a chip function and a shielding wall function simultaneously.Type: ApplicationFiled: February 6, 2023Publication date: May 2, 2024Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Chih-Hsien CHIU, Wen-Jung TSAI, Chih-Chiang HE, Ko-Wei CHANG, Chia-Yang CHEN
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Publication number: 20240145470Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: Lung-Kun CHU, Mao-Lin HUANG, Chung-Wei HSU, Jia-Ni YU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
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Publication number: 20240145898Abstract: An electronic device including a metal casing and at least one antenna module is provided. The metal casing includes at least one window. The at least one antenna module is disposed in the at least one window. The at least one antenna module includes a first radiator and a second radiator. The first radiator includes a feeding end, a first ground end joined to the metal casing, a second ground end, a first portion extending from the feeding end to the first ground end, and a second portion extending from the feeding end to the second ground end. A first coupling gap is between the second radiator and the first portion. A second coupling gap is between at least part of the second radiator and the metal casing, and the second radiator includes a third ground end joined to the metal casing.Type: ApplicationFiled: September 8, 2023Publication date: May 2, 2024Applicant: PEGATRON CORPORATIONInventors: Chien-Yi Wu, Chao-Hsu Wu, Sheng-Chin Hsu, Chih-Wei Liao, Hau Yuen Tan, Cheng-Hsiung Wu, Shih-Keng Huang