Patents by Inventor Chih-An Wei
Chih-An Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240121954Abstract: A memory device includes a first stack structure including first gate layers and first insulating layers alternately stacked with each other. A first channel pillar extends through the first stack structure. A second stack structure is located on the first stack structure and includes second gate layers and second insulating layers alternately stacked with each other. A second channel pillar extends through the second stack structure and is separated from the first channel pillar. A first conductive pillar and a second conductive pillar are located in and electrically connecting with the first channel pillar and the second channel pillar. A charge storage structure is located between the first gate layers and the first channel pillar, and between the second gate layers and the second channel pillar. The memory device may be applied to a 3D AND flash memory.Type: ApplicationFiled: October 11, 2022Publication date: April 11, 2024Applicant: MACRONIX International Co., Ltd.Inventors: Chih-Wei Hu, Teng-Hao Yeh
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Publication number: 20240120018Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.Type: ApplicationFiled: October 5, 2022Publication date: April 11, 2024Applicant: MACRONIX International Co., Ltd.Inventors: Chung-Han Wu, Che-Wei Liang, Chih-He Chiang, Shang-Chi Yang
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Publication number: 20240120402Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.Type: ApplicationFiled: November 19, 2023Publication date: April 11, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Chun-Fu LU, Chih-Hao WANG, Kuan-Lun CHENG
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Publication number: 20240117840Abstract: A slide rail assembly adapted to dispose to a first casing is provided. The slide rail assembly includes an outer slide rail, an inner slide rail, and first and second engaging components. The outer slide rail includes a first hook. The inner slide rail is slidably disposed to the outer slide rail and includes first and second ends and positioning slots. First fixing portions of the first casing is engaged with several of the positioning slots. The first engaging component is partially overlapped with a critical positioning slot of the positioning slots and includes a second hook. The second engaging component includes a third hook. When the first casing is set on the inner slide rail, the second hook leaves an engaging path with the first hook, and the first casing and the inner slide rail slide to a position where the third hook is engaged with the first hook.Type: ApplicationFiled: August 9, 2023Publication date: April 11, 2024Applicant: PEGATRON CORPORATIONInventors: Yi-Ching Tseng, Chih-Wei Yu
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Publication number: 20240115650Abstract: The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of either interferon or ribavirin, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof.Type: ApplicationFiled: December 11, 2023Publication date: April 11, 2024Applicant: ABBVIE INC.Inventors: Walid M. Awni, Barry M. Bernstein, Andrew L. Campbell, Sandeep Dutta, Chih-Wei Lin, Wei Liu, Rajeev M. Menon, Thomas J. Podsadecki, Tianli Wang, Sven Mensing
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Publication number: 20240115327Abstract: An aiming system includes a positioner, an aiming device, and a processor. The positioner has a function of acquiring spatial information, and the aiming device is connected to the positioner, and the processor is connected to the positioner or the aiming device. A method of using the aiming system is also provided. Surgical guidance is more intuitive by directly combining the positioner with the aiming device.Type: ApplicationFiled: October 6, 2023Publication date: April 11, 2024Inventors: Chih Wei CHEN, Hao Kai CHOU, Chih Min YANG
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Patent number: 11951638Abstract: A method for determining a standard depth value of a marker includes obtaining a maximum depth value of the marker. A reference depth value of the marker is obtained based on a depth image of the marker, and a Z-axis coordinate value of the marker is obtained based on a color image of the marker. When the reference depth value and the Z-axis coordinate value are both less than the maximum depth value, and a difference between the reference depth value and the Z-axis coordinate value is not greater than 0, the depth reference value is set as the standard depth value of the marker; and when the difference is greater than 0, the Z-axis coordinate value is set as the standard depth value of the marker.Type: GrantFiled: December 29, 2020Date of Patent: April 9, 2024Assignee: Chiun Mai Communication Systems, Inc.Inventors: Tung-Chun Hsieh, Chung-Wei Wu, Chih-Wei Li, Chia-Yi Lin
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Patent number: 11951587Abstract: The present disclosure is directed to techniques of zone-based target control in chemical mechanical polishing of wafers. Multiple zones are identified on a surface of a wafer. The CMP target is achieved on each zone in a sequence of CMP processes. Each CMP process in the sequence achieves the CMP target for only one zone, using a CMP process selective to other zones.Type: GrantFiled: August 12, 2019Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Che-Liang Chung, Che-Hao Tu, Kei-Wei Chen, Chih-Wen Liu
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Patent number: 11956421Abstract: Method and apparatus of video coding are disclosed. According to one method, in the decoder side, a predefined Intra mode is assigned to a neighboring block adjacent to the current luma block when the neighboring block satisfies one or more conditions. An MPM (Most Probable Mode) list is derived based on information comprising at least one of neighboring Intra modes. A current Intra mode is derived utilizing the MPM list. The current luma block is decoded according to the current Intra mode According to another method, a predefined Intra mode is assigned to a neighboring block adjacent to the current luma block if the neighboring block is coded in BDPCM (Block-based Delta Pulse Code Modulation) mode, where the predefined Intra mode is set to horizontal mode or vertical mode depending on prediction direction used by the BDPCM mode.Type: GrantFiled: May 7, 2020Date of Patent: April 9, 2024Assignee: HFI INNOVATION INC.Inventors: Man-Shu Chiang, Chih-Wei Hsu, Tzu-Der Chuang, Ching-Yeh Chen, Yu-Wen Huang, Shih-Ta Hsiang
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Patent number: 11956469Abstract: Video processing methods and apparatuses implemented in a video encoding or decoding system with conditional secondary transform signaling. The video encoding system determines and applies a transform operation to residuals of a transform block to generate final transform coefficients, and adaptively signals a secondary transform index according to a position of a last significant coefficient in the transform block. A value of the secondary transform index is determined according to the transform operation.Type: GrantFiled: April 15, 2020Date of Patent: April 9, 2024Assignee: HFI INNOVATION INC.Inventors: Man-Shu Chiang, Chih-Wei Hsu, Tzu-Der Chuang, Ching-Yeh Chen
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Patent number: 11956462Abstract: Video processing methods and apparatuses for coding a current block comprise receiving input data of a current block, partitioning the current block into multiple sub-blocks, deriving sub-block MVs for the current block according to a sub-block motion compensation coding tool, constraining the sub-block MVs to form constrained sub-block MVs, and encoding or decoding the current block using the constrained sub-block MVs, and applying motion compensation to the current block using the constrained sub-block MVs to encode or decode the current block. The sub-block MVs may be constrained according to a size, width, or height of the current block or a sub-block, an inter prediction direction of one of control point MVs of the current block, the current block, or current sub-block, the control point MVs, or a combination of the above.Type: GrantFiled: December 8, 2021Date of Patent: April 9, 2024Assignee: HFI INNOVATION INC.Inventors: Tzu-Der Chuang, Ching-Yeh Chen, Chen-Yen Lai, Chih-Wei Hsu
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Patent number: 11955459Abstract: A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.Type: GrantFiled: March 7, 2022Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shu-Hang Liao, Chih-Wei Wu, Jing-Cheng Lin, Szu-Wei Lu, Ying-Ching Shih
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Patent number: 11950670Abstract: A waterproof container is adapted for an electronic device with a touch screen. The waterproof container includes an upper component and a lower component. The upper component includes a first layer, a second layer and a third layer. The second layer is disposed between the first layer and the third layer. A second touched part of the second layer is connected to a first touched part of the first layer by a plurality of first connections. The second touched part of the second layer is connected to a third touched part of the third layer by a plurality of second connections, and the plurality of first connections and the plurality of second connections are staggered relative to each other. The lower component is connected to the upper component. An accommodating space is enclosed by the lower component and the upper component for accommodating the electronic device.Type: GrantFiled: December 27, 2021Date of Patent: April 9, 2024Assignee: Universal Trim Supply Co., Ltd.Inventors: Chih-Wei Yang, Shih-Sheng Yang, Hou-Chun Yang
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Patent number: 11952915Abstract: A fan includes a hub and a plurality of fan blades. The hub has an axle center. The fan blades are disposed around the hub. Each of the fan blades has a bent portion, and the bent portions of the fan blades are extended along a surrounding direction surrounding the axle center. The hub is welded with the bent portion of each of the fan blades along the surrounding direction. As a result, the number of fan blades is maximized, the strength is simultaneously ensured to be enough, and the advantages of effectively enhancing the fan characteristics are achieved.Type: GrantFiled: June 13, 2023Date of Patent: April 9, 2024Assignee: DELTA ELECTRONICS, INC.Inventors: Ching-Hsien Yeh, Chih-Wei Chan
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Patent number: 11953052Abstract: A fastener is adapted for assembling a first housing to a second housing. The first housing is provided with a protruding portion and a buckling portion, and the second housing has a first surface, a second surface, and a through hole. The fastener includes a first portion, at least one connecting portion, at least two elastic portions, and a second portion. The first portion movably abuts against the first surface and has a first opening. The connecting portion is accommodated in the through hole. One end of the connecting portion is connected to the first portion. The connecting portion is spaced apart from an inner edge of the second housing by a gap. The two elastic portions inclinedly extend into the first opening. The second portion movably abuts against the second surface and is disposed at the another end of the connecting portion.Type: GrantFiled: June 17, 2021Date of Patent: April 9, 2024Assignee: PEGATRON CORPORATIONInventors: Jian-Hua Chen, Po-Tsung Shih, Yu-Wei Lin, Ming-Hua Ho, Chih-Hao Wu
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Publication number: 20240113195Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.Type: ApplicationFiled: February 22, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jia-Ni YU, Lung-Kun CHU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20240113061Abstract: An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.Type: ApplicationFiled: December 5, 2023Publication date: April 4, 2024Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Mei-Ju LU, Chi-Han CHEN, Chang-Yu LIN, Jr-Wei LIN, Chih-Pin HUNG
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Publication number: 20240113056Abstract: A semiconductor package including a first interposer comprising a first substrate, first optical components over the first substrate, a first dielectric layer over the first optical components, and first conductive connectors embedded in the first dielectric layer, a photonic package bonded to a first side of the first interposer, where a first bond between the first interposer and the photonic package includes a dielectric-to-dielectric bond between a second dielectric layer on the photonic package and the first dielectric layer, and a second bond between the first interposer and the photonic package includes a metal-to-metal bond between a second conductive connector on the photonic package and a first one of the first conductive connectors and a first die bonded to the first side of the first interposer.Type: ApplicationFiled: March 3, 2023Publication date: April 4, 2024Inventors: Hsing-Kuo Hsia, Chen-Hua Yu, Chih-Wei Tseng, Jui Lin Chao
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Publication number: 20240113429Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.Type: ApplicationFiled: August 16, 2023Publication date: April 4, 2024Applicant: PEGATRON CORPORATIONInventors: Chien-Yi Wu, Chao-Hsu Wu, Sheng-Chin Hsu, Chia-Hung Chen, Chih-Wei Liao, Hau Yuen Tan, Hao-Hsiang Yang, Shih-Keng Huang
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Publication number: 20240113703Abstract: An ORing FET control circuit and method are provided. The circuit includes an ORing FET, a comparator, first, second and third resistors, a first capacitor, a diode and a driving unit. The positive and negative input terminals of the comparator are electrically connected to the input and output voltages. The first resistor, the second resistor, the first capacitor, and the third resistor are electrically connected in series between a reference voltage and a ground terminal sequentially. The reference voltage is lower than a voltage at the positive input terminal. When the input voltage is lower than the output voltage, if a voltage across the ORing FET is larger than a threshold, the comparator outputs a driving signal at low level, and correspondingly the driving unit turns off the ORing FET. The threshold depends on resistances of the first and second resistors.Type: ApplicationFiled: September 21, 2023Publication date: April 4, 2024Inventors: Yung-Sheng Yeh, Chih-Wei Liang
