Abstract: A method for automatically obtaining factors related to traffic accidents includes: in case that a traffic accident is identified in a traffic video, categorizing the traffic accident into one of a plurality of pre-determined categories; collecting, first factoring data and second factoring data contained in the traffic video within an accident-related time period, tagging the traffic video as a traffic accident video with the one of the pre-determined categories, and storing the traffic accident video, the first factoring data and the second factoring data in a data storage; compiling a factor group for the traffic accident video based on the first factoring data and the second factoring data, and aggregating a plurality of factor groups of traffic accident videos to create aggregated factor groups; and creating a spreadsheet that contains the aggregated factor groups and that can be sorted using geographical locations.

Abstract: A delay measurement system and a measurement method are provided. The delay measurement system includes a delay control device and a comparator. The delay control device is configured to generate a second signal in response to a first signal, wherein a rising edge of the second signal delays a first delay time with respect to a rising edge of the first signal, and the first delay time is controlled in response to an output signal of a comparator. The comparator is configured to compare the first delay time with a second delay time and output the output signal, wherein a rising edge of a third signal delays the second delay time with respect to the rising edge of the first signal, and the third signal is generated by a device under test (DUT) in response to the first signal.

Abstract: Disclosed are devices for optical sensing and manufacturing method thereof. In one embodiment, a device for optical sensing includes a substrate, a photodetector and a reflector. The photodetector is disposed in the substrate. The reflector is disposed in the substrate and spaced apart from the photodetector, wherein the reflector has a reflective surface inclined relative to the photodetector that reflects light transmitted thereto to the photodetector.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A delay-locked loop (DLL) circuit includes a low pass filter coupled to a phase detector, and a digitally controlled delay line (DCDL) coupled to the low pass filter. The DCDL includes an input terminal, an output terminal coupled to an input terminal of the phase detector, and stages that propagate a signal along a first path from the input terminal to a selectable return stage and along a second path from the return stage to the output terminal. Each stage includes first and second inverters that selectively propagate the signal along the first and second paths, a third inverter that selectively propagates the signal from the first path to the second path, and either fourth and fifth inverters that selectively propagate the signal along the first and second paths, or a sixth inverter that selectively propagates the signal from the first path to the second path.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A method according one embodiment of the present disclosure include forming a stack over a substrate, forming a fin-shape structure from patterning the stack and the substrate, recessing the fin-shape structure to form a source/drain trench, depositing a dielectric film in the source/drain trench with a top surface below a top surface of the substrate in the fin-shape structure, and forming an epitaxial feature over the dielectric film. A bottom surface of the epitaxial feature is below the top surface of the substrate in the fin-shape structure.

Abstract: A delay measurement system and a measurement method are provided. The delay measurement system includes a delay control device and a comparator. The delay control device is configured to generate a second signal in response to a first signal, wherein a rising edge of the second signal delays a first delay time with respect to a rising edge of the first signal, and the first delay time is controlled in response to an output signal of a comparator. The comparator is configured to compare the first delay time with a second delay time and output the output signal, wherein a rising edge of a third signal delays the second delay time with respect to the rising edge of the first signal, and the third signal is generated by a device under test (DUT) in response to the first signal.

Abstract: A semiconductor device includes an active region over a substrate extending along a first lateral direction. The semiconductor device includes a number of first conductive structures operatively coupled to the active region. The first conductive structures extend along a second lateral direction. The semiconductor device includes a number of second conductive structures disposed above the plurality of first conductive structures. The second conductive structures extend along the first lateral direction. The semiconductor device includes a first capacitor having a first electrode and a second electrode. The first electrode includes one of the first conductive structures and the active region, and the second electrode includes a first one of the second conductive structures. Each of the active region and the first conductive structures is electrically coupled to a power rail structure configured to carry a supply voltage.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in an n-type Fin Field-Effect (FinFET) region and a p-type FinFET region, respectively, forming a first dielectric fin and a second dielectric fin in the n-type FinFET region and the p-type FinFET region, respectively, forming a first epitaxy mask to cover the second semiconductor fin and the second dielectric fin, performing a first epitaxy process to form an n-type epitaxy region based on the first semiconductor fin, removing the first epitaxy mask, forming a second epitaxy mask to cover the n-type epitaxy region and the first dielectric fin, performing a second epitaxy process to form a p-type epitaxy region based on the second semiconductor fin, and removing the second epitaxy mask. After the second epitaxy mask is removed, a portion of the second epitaxy mask is left on the first dielectric fin.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in an n-type Fin Field-Effect (FinFET) region and a p-type FinFET region, respectively, forming a first dielectric fin and a second dielectric fin in the n-type FinFET region and the p-type FinFET region, respectively, forming a first epitaxy mask to cover the second semiconductor fin and the second dielectric fin, performing a first epitaxy process to form an n-type epitaxy region based on the first semiconductor fin, removing the first epitaxy mask, forming a second epitaxy mask to cover the n-type epitaxy region and the first dielectric fin, performing a second epitaxy process to form a p-type epitaxy region based on the second semiconductor fin, and removing the second epitaxy mask. After the second epitaxy mask is removed, a portion of the second epitaxy mask is left on the first dielectric fin.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain (S/D) feature disposed in a recess between two adjacent channel regions, wherein the S/D feature comprises an epitaxial layer conformally deposited on an exposed surface of the recess. The structure also includes a silicide layer conformally disposed on the S/D feature, and a S/D contact disposed on the silicide layer, wherein the S/D contact has a first portion extending into the recess, and the first portion has at least three surfaces being surrounded by the silicide layer and the S/D feature.

Abstract: An electronic design flow generates an electronic architectural design layout for analog circuitry from a schematic diagram. The electronic design flow assigns analog circuits of the schematic diagram to various categories of analog circuits. The electronic design flow places various analog standard cells corresponding to these categories of analog circuits into analog placement sites assigned to the analog circuits. These analog standard cells have a uniform cell height which allows these analog standard cells to be readily connected or merged to digital standard cells which decreases the area of the electronic architectural design layout. This uniformity in height between these analog standard cells additionally provides a more reliable yield when compared to non-uniform analog standard cells.

Abstract: A semiconductor device includes an active region over a substrate extending along a first lateral direction. The semiconductor device includes a number of first conductive structures operatively coupled to the active region. The first conductive structures extend along a second lateral direction. The semiconductor device includes a number of second conductive structures disposed above the plurality of first conductive structures. The second conductive structures extend along the first lateral direction. The semiconductor device includes a first capacitor having a first electrode and a second electrode. The first electrode includes one of the first conductive structures and the active region, and the second electrode includes a first one of the second conductive structures. Each of the active region and the first conductive structures is electrically coupled to a power rail structure configured to carry a supply voltage.

Abstract: A device for measuring a frequency response of a wafer is provided. The device includes a first oscillator, a clock generator, a first circuit, and a first driver. The first oscillator configured to provide a first signal having a first frequency. The clock generator is configured to receive the first signal and generate a first clock signal and a second clock signal having the first frequency. The first circuit on the wafer and having a first number of parallelly connected ring oscillators. The first driver is coupled to the first circuit and the clock generator, and configured to receive the first clock signal and the second clock signal, and drive the first circuit. A first portion of each ring oscillator of the first circuit is electrically disconnected from a second portion of each ring oscillator of the first circuit.

Abstract: Systems and methods are described herein for charge-based capacitor measurement. The system includes a first pseudo-inverter circuit and a second pseudo-inverter circuit. The system also includes a control circuit coupled between the first inverter circuit and the second inverter circuit. The control circuit is configured to generate independent and non-overlapping control signals for the first pseudo-inverter circuit and the second pseudo-inverter circuit. A shielding metal is coupled to the first pseudo-inverter circuit, the second pseudo-inverter circuit, and the control circuit. The shielding metal is configured to dissipate parasitic capacitance of at least one of the first pseudo-inverter circuit or the second pseudo-inverter circuit. A device under test is coupled to each of the first inverter circuit and the second inverter circuit.

Abstract: A device including an inverter circuit, a hysteresis control circuit, and a high-side input level shifter. The inverter circuit having an output and including at least two series connected PMOS transistors connected, at the output, in series to at least two series connected NMOS transistors. The hysteresis control circuit coupled to the output to provide feedback to the at least two series connected PMOS transistors and to the at least two series connected NMOS transistors. The high-side input level shifter connected to gates of the at least two PMOS transistors and configured to shift a low level of an input signal to a higher level and provide the higher level to one or more of the gates of the at least two PMOS transistors.

Abstract: A device for measuring characteristics of a wafer is provided. The device includes a first circuit on the wafer and having a first number of parallelly connected oscillators, and a second circuit on the wafer and having the first number of parallelly connected oscillators; wherein a first portion of the second circuit is disconnected from a second portion of the second circuit.

Abstract: A device including an inverter circuit, a hysteresis control circuit, and a high-side input level shifter. The inverter circuit having an output and including at least two series connected PMOS transistors connected, at the output, in series to at least two series connected NMOS transistors. The hysteresis control circuit coupled to the output to provide feedback to the at least two series connected PMOS transistors and to the at least two series connected NMOS transistors. The high-side input level shifter connected to gates of the at least two PMOS transistors and configured to shift a low level of an input signal to a higher level and provide the higher level to one or more of the gates of the at least two PMOS transistors.

Abstract: Various techniques are disclosed for automatically generating sub-cells for a non-final layout of an analog integrated circuit. Device specifications and partition information for the analog integrated circuit is received. Based on the device specifications and the partition information, first cut locations for a first set of cuts to be made along a first direction of a non-final layout of the analog integrated circuit and second cut locations for a second set of cuts to be made along a second direction in the non-final layout are determined. The first set of cuts are made in the non-final layout at the cut locations to produce a temporary layout. The second set of cuts are made in the temporary layout at the cut locations to produce a plurality of sub-cells.

Abstract: An electronic design flow generates an electronic architectural design layout for analog circuitry from a schematic diagram. The electronic design flow assigns analog circuits of the schematic diagram to various categories of analog circuits. The electronic design flow places various analog standard cells corresponding to these categories of analog circuits into analog placement sites assigned to the analog circuits. These analog standard cells have a uniform cell height which allows these analog standard cells to be readily connected or merged to digital standard cells which decreases the area of the electronic architectural design layout. This uniformity in height between these analog standard cells additionally provides a more reliable yield when compared to non-uniform analog standard cells.