Patents by Inventor Chih-Chiang Lu
Chih-Chiang Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10600938Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.Type: GrantFiled: May 18, 2018Date of Patent: March 24, 2020Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
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Publication number: 20200066935Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.Type: ApplicationFiled: November 4, 2019Publication date: February 27, 2020Inventors: Yi-Ming CHEN, Hao-Min KU, Chih-Chiang LU, Tzu-Chieh HSU
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Patent number: 10553747Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.Type: GrantFiled: October 17, 2016Date of Patent: February 4, 2020Assignee: Epistar CorporationInventors: Chih-Chiang Lu, Yi-Ming Chen, Chun-Yu Lin, Ching-Pei Lin, Chung-Hsun Chien, Chien-Fu Huang, Hao-Min Ku, Min-Hsun Hsieh, Tzu-Chieh Hsu
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Patent number: 10553761Abstract: A light-emitting device includes a metal connecting structure; a metal reflective layer on the metal connecting structure; a barrier layer between the metal connecting structure and the metal reflective layer; a light-emitting stack on the metal reflective layer; a dielectric layer between the light-emitting stack and the metal reflective layer, and a first extension electrode and a second extension electrode on the light-emitting stack and away from the metal reflective layer. The dielectric layer includes a first part and a second part separated from the first part from a cross section of the light-emitting device. The first extension electrode and the second extension electrode respectively align with the first part and the second part. From a cross section of the light-emitting stack, the first extension electrode has a first width and the first part has a second width larger than the first width.Type: GrantFiled: January 28, 2019Date of Patent: February 4, 2020Assignee: Epistar CorporationInventors: Fu Chun Tsai, Wen Luh Liao, Shih I Chen, Chia Liang Hsu, Chih Chiang Lu
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Publication number: 20200006595Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: ApplicationFiled: September 12, 2019Publication date: January 2, 2020Inventors: Wen-Luh LIAO, Chih-Chiang LU, Shih-Chang LEE, Hung-Ta CHENG, Hsin-Chan CHUNG, Yi-Chieh LIN
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Patent number: 10511140Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.Type: GrantFiled: August 21, 2018Date of Patent: December 17, 2019Assignee: EPISTAR CORPORATIONInventors: Tzu-Chieh Hsu, Yi-Wen Huang, Yi-Hung Lin, Chih-Chiang Lu
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Patent number: 10461223Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .Type: GrantFiled: September 12, 2018Date of Patent: October 29, 2019Assignee: Epistar CorporationInventors: Yung-Fu Chang, Hsin-Chan Chung, Hung-Ta Cheng, Wen-Luh Liao, Shih-Chang Lee, Chih-Chiang Lu, Yi-Ming Chen, Yao-Ning Chan, Chun-Fu Tsai
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Patent number: 10453995Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: GrantFiled: August 25, 2017Date of Patent: October 22, 2019Assignee: EPISTAR CORPORATIONInventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
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Publication number: 20190296186Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.Type: ApplicationFiled: June 10, 2019Publication date: September 26, 2019Inventors: Chien-Fu HUANG, Chih-Chiang LU, Chun-Yu LIN, Hsin-Chih CHIU
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Publication number: 20190259906Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.Type: ApplicationFiled: May 7, 2019Publication date: August 22, 2019Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Patent number: 10327040Abstract: Techniques for low latency streaming, for example in a broadcasting environment, are described herein. In some examples, one or more individual renditions may be encoded into multiple rendition versions associated with different respective latencies. Also, in some examples, one or more individual renditions may be encoded into multiple rendition versions having different respective amounts of forward error correction (FEC), for example by an edge node of a video streaming service. Also, in some examples, video may be broadcast using a protocol that does not require retransmission of lost packets, such as Web Real-Time Communication (WebRTC), which is commonly used for point-to-point transmissions. Also, in some examples, one or more servers may receive quality of service feedback information from each player to which video content is transmitted. The one or more servers may use this feedback information to select and switch between appropriate renditions and rendition versions for each player.Type: GrantFiled: September 28, 2017Date of Patent: June 18, 2019Assignee: Twitch Interactive, Inc.Inventors: Yueshi Shen, Martin Hess, Shawn Hsu, Eran Ambar, Abhinav Kapoor, Jorge Arturo Villatoro, Spencer Nelson, Jeffrey Garneau, Cyrus Hall, Jyotindra Vasudeo, Andrew Francis, Yuechuan Li, Chih-Chiang Lu
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Patent number: 10319877Abstract: The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.Type: GrantFiled: April 3, 2018Date of Patent: June 11, 2019Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Chih-Chiang Lu, Chun-Yu Lin, Hsin-Chih Chiu
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Publication number: 20190172977Abstract: A light-emitting device includes a metal connecting structure; a metal reflective layer on the metal connecting structure; a barrier layer between the metal connecting structure and the metal reflective layer; a light-emitting stack on the metal reflective layer; a dielectric layer between the light-emitting stack and the metal reflective layer, and a first extension electrode and a second extension electrode on the light-emitting stack and away from the metal reflective layer. The dielectric layer includes a first part and a second part separated from the first part from a cross section of the light-emitting device. The first extension electrode and the second extension electrode respectively align with the first part and the second part. From a cross section of the light-emitting stack, the first extension electrode has a first width and the first part has a second width larger than the first width.Type: ApplicationFiled: January 28, 2019Publication date: June 6, 2019Inventors: Fu Chun TSAI, Wen Luh LIAO, Shih I CHEN, Chia Liang HSU, Chih Chiang LU
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Publication number: 20190157498Abstract: A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6.Type: ApplicationFiled: January 22, 2019Publication date: May 23, 2019Inventors: Min-Hsun HSIEH, Chih-Chiang LU, Ching-Pu TAI
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Publication number: 20190158352Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap anType: ApplicationFiled: January 25, 2019Publication date: May 23, 2019Inventors: Chih-Chiang LU, Yi-Chieh LIN, Wen-Luh LIAO, Shou-Lung CHEN, Chien-Fu HUANG
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Patent number: 10283669Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.Type: GrantFiled: July 7, 2017Date of Patent: May 7, 2019Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Publication number: 20190103535Abstract: A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.Type: ApplicationFiled: November 15, 2018Publication date: April 4, 2019Inventors: Chih-Chiang LU, Wei-Chih PENG, Shiau-Huei SAN, Min-Hsun HSIEH
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Patent number: 10236411Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap anType: GrantFiled: October 26, 2016Date of Patent: March 19, 2019Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Wen-Luh Liao, Shou-Lung Chen, Chien-Fu Huang
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Publication number: 20190081213Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.Type: ApplicationFiled: September 12, 2018Publication date: March 14, 2019Inventors: Yung-Fu CHANG, Hsin-Chan CHUNG, Hung-Ta CHENG, Wen-Luh LIAO, Shih-Chang LEE, Chih-Chiang LU, Yi-Ming CHEN, Yao-Ning CHAN, Chun-Fu TSAI
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Patent number: 10230019Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.Type: GrantFiled: February 2, 2018Date of Patent: March 12, 2019Assignee: EPISTAR CORPORATIONInventors: Fu Chun Tsai, Wen Luh Liao, Shih I Chen, Chia Liang Hsu, Chih Chiang Lu